Dr. Jenica Neamtu Profile

Dr. Jenica Neamtu

at INCDIE ICPE-CA

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Proceedings Article | 8 October 2018 Paper

Smart systems based on silicon carbide semiconductor technology for detection of combustible gas leakage in security applications

Jenica Neamtu, Andrei Sorin Neamtu

Proceedings Volume 10804, 108040P (2018) https://doi.org/10.1117/12.2324964

KEYWORDS: Silicon carbide, Hydrogen, Sensors, Molybdenum, Oxides, Metals, Interfaces, Capacitors, Argon, Palladium

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For high temperature sensing applications, metal/oxide/semiconductor (MOS) devices based on SiC show great promise, particularly above 200 °C, which represents an upper bound for MOS devices based on silicon (Si) semiconductor. This paper presents an investigation of a smart system based on silicon carbide technology used as hydrogen sensor at high temperature. The (Pd/SiO₂/SiC) sensor was fabricated using microelectronics technology. The semiconductor used was 4H-SiC wafer, with two epitaxial layers: a buffer layer with a thickness of 0.5 μm and an active doped layer (N_D=2.07x10¹⁶ cm^-3) with a thickness of 8 μm. The silicon oxide (SiO₂) layer, with 30 nm thickness was thermally grown by dry oxidation. The electrode of the capacitor was a catalytic metal, obtained by D.C. sputtering deposition of a palladium (Pd) thin film with 50 nm thickness. A chip structure with 400 μm diameter was obtained by photolithographic process.

The experiments were aimed at the electrical behavior of the M/O/SiC device at gas concentrations from 0 ppm to 2000 ppm H₂ in argon (Ar). The C-V characteristics of the H₂sensor shift to smaller voltages with increasing gas concentration. The bias voltage shift is caused by hydrogen adsorption in metal-oxide and oxide-semiconductor interfaces. The flat band voltage has an important decrease when H₂ concentration increases and reaches a -4.05 V shift at 2000 ppm H2 in Ar. These results show that the Pd/SiO₂/SiC sensors are suitable for detection of small H₂ concentrations (10-200 ppm H₂), particularly for detection of H₂leakages.

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