Dr. Jenq-Dar Tsay Profile

Dr. Jenq-Dar Tsay

Manager at Industrial Technology Research Institute

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Author

Publications (4)

Proceedings Article | 17 March 2010 Paper

Comparison of different template structures for high quality and self-separation thick GaN growth

Yen-Hsiang Fang, Chu-Li Chao, Tung-Wei Chi, Kuei-Ming Chen, Po-Chun Liu, Jenq-Dar Tsay

Proceedings Volume 7602, 760221 (2010) https://doi.org/10.1117/12.846513

KEYWORDS: Gallium nitride, Sapphire, Scanning electron microscopy, Silica, Vapor phase epitaxy, Crystals, Nickel, Phonons, Etching, Nanorods

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Proceedings Article | 3 February 2009 Paper

High quality free-standing GaN thick-films prepared by hydride vapor phase epitaxy using stress reducing techniques

Hsin-Hsiung Huang, Wei-I Lee, Kuei-Ming Chen, Ting-Li Chu, Pei-Lun Wu, Hung-Wei Yu, Po-Chun Liu, Chu-Li Chao, Tung-Wei Chi, Jenq-Dar Tsay, Li-Wei Tu

Proceedings Volume 7231, 723116 (2009) https://doi.org/10.1117/12.814441

KEYWORDS: Gallium nitride, Sapphire, Raman spectroscopy, Semiconducting wafers, Scanning electron microscopy, Optical lithography, Micro raman spectroscopy, Phonons, Vapor phase epitaxy, Laser liftoff

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SPIE Journal Paper | 1 November 2005

Beveled sidewall formation and its effect on the light output of a GaInN multiquantum well light-emitting diode with sapphire substrate

Jung-Tsung Hsu, W. Yeh, ChangCheng Chuo, Jenq-Dar Tsay, C. Huang, C. Y. Lin

OE, Vol. 44, Issue 11, 111304, (November 2005) https://doi.org/10.1117/12.10.1117/1.2131049

KEYWORDS: Light emitting diodes, Gallium nitride, Sapphire, Monte Carlo methods, Optical simulations, Absorption, External quantum efficiency, Optical engineering, Quantum wells, Vapor phase epitaxy

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Proceedings Article | 20 October 2004 Paper

Bevelled-sidewalls formation and its effect on the light output of GaInN MQW LED chips

Jung Tsung Hsu, C. S. Huang, W. Y. Yeh, Jenq Dar Tsay, Y. D. Guo, Chang Cheng Chuo, Chun Yu Lin, Ching Cherng Sun, S. M. Pan

Proceedings Volume 5530, (2004) https://doi.org/10.1117/12.565339

KEYWORDS: Light emitting diodes, Gallium nitride, External quantum efficiency, Sapphire, Monte Carlo methods, Absorption, Optical simulations, LED lighting, Refractive index, Solid state lighting

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