InGaAsN is a promising material system to enable low-cost GaAs-based detectors to operate in the telecommunication
spectrum, despite the problems posed by the low growth temperature required for nitrogen incorporation. We
demonstrate that InGaAsN p+-i-n+ structures with nominal In and N fraction of 10% and 3.8%, grown by molecular
beam epitaxy (MBE) under non-optimal growth conditions, can be optimized by post growth thermal annealing to match
the performance of optimally grown structures. We report the findings of an annealing study by comparing the
photoluminescence spectra, dark current and background concentration of the as-grown and annealed samples. The dark
current of the optimally annealed sample is approximately 2 μA/cm2 at an electric field of 100 kV/cm, and is the lowest
reported to date for InGaAsN photodetectors with a cut-off wavelength of 1.3 μm. Evidence of lower unintentional
background concentration after annealing at a sufficiently high temperature, is also presented.
We investigate the evolution of short-duration pulses injected into laser diodes biased above threshold with the use of spectrally and temporally resolved experimental and numerical methods. We show that stable transients may be formed as a result of spatially re-distributing the cavity energy. By controlling the phase of injected pulses with respect to the diode cavity radiation we show through simulation that it is possible to directly generate and control stable streams of pulses.
The band-structure dependence of impact ionisation in bulk semiconductors strained Ge/Si alloys and multiple quantum well avalanche photodiodes was studied theoretically and experimentally. Hydrostatic pressure was used to investigate impact ionisation in Si Ge and GaAs. The results are interpreted with the aid of theoretically calculated threshold energies for impact ionisation. Calculated thresholds in strained Ge/Si alloys suggest that this material system may be of interest for low-noise photodetectors. However Monte Carlo studies of impact ionisation in multiple quantum well (MQW) avalanche photodiodes (APDs) show that the F valley conduction band offset does not lead to improved performance in GaAs/AlGaAs MQW APDs.
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