One of the key factors that determines organic device performance is the specific molecular structure and function of organic materials in thin films, strongly governed by molecular conformational changes during operation. In this talk, the formation and dynamics of molecular conformation in blue light-emitting polymers will be first discussed. By probing in real time the evolution of fluorescence spectra of single polymer chains, we identify dynamic molecular conformation-controlled photophysical processes and their impact on device performance. Second, the importance of molecular conformational changes in organic photoconversion small molecules will be presented. Their effects on energetics, intermolecular interactions, and hence device performance and stability will be highlighted.
A large band-edge offset at organic/inorganic interfaces and imbalance in charge carrier mobilities of conjugated polymers limits an efficient charge injection and recombination in polymer light-emitting diodes (PLEDs). In this talk, I will discuss how the electrochemical doping of conjugated polymers with ultra-trace (< 1 wt%) electrochemical doping agents (EDAs) can significantly improve charge injection and balance, hence enhancing the recombination and device performance. In particular, I will highlight a dramatic reduction of turn-on voltages for current and luminance achieved in the single-layer PLED devices up to 1.2um-thick. I will also show other advantages of the ultra-trace electrochemical doping which allows fabrication of large-area devices with homogeneous electroluminescence emission. Our work provides a simple but highly feasible strategy for developing high-quality efficient light applications fully compatible with printing technologies.
Non-fullerene acceptors (NFAs) provide an exciting alternative to traditional fullerene containing organic photovoltaics and are already out-competing fullerenes in terms of stability and efficiency. One class of NFA that has proved most promising is an A-D-A motif not dissimilar to a push/pull conjugated polymer. O-IDTBR, a planar A-D-A NFA has achieved the highest efficiency for a P3HT containing device, with an impressive 7.7% being obtained when in a ternary blend with a secondary twisted acceptor, O-IDFBR. Surprisingly this ternary blend not only shows an improvement in JSC, FF and VOC but also exhibits a greatly improved operational stability compared to the binary IDTBR:P3HT device. Our overarching goal is to understand this improved stability. Here we undertake the first steps to understanding the stability of these materials by studying the molecular origin of degradation for neat and blends containing these novel NFAs. We find by using in-situ resonant Raman spectroscopy, and supported by molecular DFT simulations, that both molecules undergo a two phase degradation. That being an oxygen mediated, photo-induced conformational change, most likely a torsion of the Core-BT dihedral, which then induces further irreversible degradation. It is also found that annealing O-IDTBR greatly enhances stability. We then investigate the miscibility of the two NFAs with P3HT and how this in-turn affects blend stability. The impact of such molecular conformational changes of these non-fullerene acceptors on device stability will be discussed.
Continuous increase in the device performance of lead halide perovskite-based solar cells is strongly related to better understanding of the optoelectronic processes occurring in the perovskite layer and its interfaces. There are many of these processes that are critical to device performance, but are not yet fully understood, which include charge carrier accumulation and recombination, trapping of electrons and holes, and ionic movement. Here we report our recent results of methylammonium lead iodide (MAPI)-based photovoltaic devices identifying the origins of different open circuit voltages and their potential loss mechanisms in conventional and inverted device structures. We have investigated in detail the energetics and the illumination generated surface photovoltage (SPV) and its transient behaviour at the perovskite layer and its heterointerfaces with various charge extracting interlayers.
A MAPI layer with different thicknesses was deposited on top of the various underlayers including ITO, n-type TiO2, p-type PEDOT:PSS and many oxides and organic semiconductors. We found that the work function of MAPI is strongly influenced by the underlayer showing generally p-type semiconductor character. The results of thickness dependent SPV measurements indicate that there is an increase in the hole concentration at both PEDOT:PSS/MAPI and TiO2/MAPI interfaces, which leads to an increased interfacial charge recombination. In this talk, I will discuss how these observations are related to different open circuit voltages and their loss in conventional and inverted devices. I will also discuss the temperature dependent transient SPV results, which is used to distinguish different processes governed by charge carrier generation, ion migration, and charge trapping – three processes taking place at three different timescales.
We report efficient organic bulk heterojunction solar cells, utilizing spray-patterned films of single-wall carbon nanotubes for the transparent electrode. High power conversion efficiencies of up to 3.6% were obtained using a blend of poly(3-hexylthiophene) and phenyl-C61 butyric acid methyl ester as the active layer, comparable to conventional devices utilizing indium tin oxide as the transparent electrode.
A method for target speech enhancement based on degenerate unmixing and estimating technique (DUET) has
been described. To avoid the requirements of the DUET which need to know the number of sources in advance
and to estimate the attenuation and delay parameters for all sources, the method assumes that extraction of only
one target signal is required, which is often plausible in real-world applications such as speech enhancement. The
method can efficiently recover the target speech with fast convergence by estimating the parameters for the target
source only. In addition, it does not need to know the number of sources in advance. In order to accomplish robust
speech recognition, we propose an algorithm which employs the cluster-based missing feature reconstruction
technique based on log-spectral features of enhanced speech in the process of extracting mel-frequency cepstral
coefficients (MFCCs). The algorithm estimates missing time-frequency regions by computing the signal-to-noise
ratios (SNRs) from the log-spectral features of the enhanced speech and observed noisy speech and by finding time-frequency segments which have the SNRs smaller than a threshold. The missing time-frequency regions are filled by using bounded estimation based on the log-spectral features that are considered to be reliable and on the knowledge of the log-spectral feature cluster to which the incoming target speech is assumed to belong. Then, the log-spectral features are transformed into cepstral features in the usual fashion of extracting MFCCs. Experimental results show that the proposed algorithm significantly improves recognition performance in noisy environments.
Ambipolar organic field-effect transistors (FET) are interesting as building blocks for low power complementary circuits in organic electronics. Another intriguing feature of ambipolar FETs is the recombination of holes and electrons within the channel, which leads to the formation of excitons that can relax radiatively and thus emit light. We have recently demonstrated that ambipolar charge transport is a generic feature in a wide range of polymer semiconductors when appropriate injection electrodes and trapfree dielectrics are used. Among these materials are those that are generally used in light-emitting diodes and thus show high photoluminescence efficiencies.
Here we demonstrate ambipolar light-emitting field-effect transistors based on the conjugated polymer OC1C10-PPV (poly(2-methoxy-5-(3,7-dimethyloctoxy)-p-phenylenevinylene)) as the semiconducting and emissive layer. OC1C10- PPV shows efficient electron and hole transport with field-effect mobilities of 3⋅10-3 cm2/Vs and 6⋅10-4 cm2/Vs, respectively. Electrons and holes are injected from calcium and gold source and drain electrodes, respectively, and recombine radiatively within the transistor channel leading to visible light emission. We can actively control the position of the recombination zone through the applied gate and source-drain bias in both constant and variable current mode and thus move the emission zone from the source through the channel to the drain electrode and vice versa. The intensity of light emitted from the channel is proportional to the drain current with efficiencies comparable to those of LEDs based on OC1C10-PPV.
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