Mr. Jia-Xin Ding Profile

Jia-Xin Ding

at Luoyang Optoelectro Technology Development Ctr

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Proceedings Article | 12 March 2021 Paper

Molecular beam epitaxial InSb infrared photodiode with low dark current

Xubo Zhu, Yanqiu Lyu, Zhenyu Peng, Xiancun Cao, Lixue Zhang, Guansheng Yao, Jiaxin Ding

Proceedings Volume 11763, 117630F (2021) https://doi.org/10.1117/12.2585696

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The InSb epitaxial layer of p⁺-n-n⁺ structure was grown by Molecular Beam Epitaxy (MBE) on a heavily doped InSb substrate. Photodiodes of InSb were fabricated by standard semiconductor manufacturing process. Measurement and analysis of its electrical properties was carried out. Compared with traditional bulk crystal InSb of p⁺-n structure, we find that, when the external bias voltage is 0.1V, dark current density values of p⁺-n-n⁺ InSb device and InSb bulk material device is 1.1×10^-6 A·cm^-2 and 9.5×10^-5 A·cm^-2 at 77K, respectively. zero-bias-resistance area products is 8.9×10⁴Ω·cm² and 6.2×10³ Ω·cm² at 77K, respectively. Doping concentrations values in the absorption layers are equal to 5.0×10¹⁴ cm^-3 and 1.3×10¹⁶ cm^-3 , respectively. The InSb epitaxial layer of p⁺-n-n⁺ structure which has better crystal quality achieves better performance than bulk crystal InSb when the passivation process is reliable. It provides an important foundation for the fabrication of epitaxial InSb infrared detector.

Proceedings Article | 21 August 2013 Paper

Research on the electrical characteristics of the Pt/CdS Schottky diode

Jia-xin Ding, Xiang-feng Zhang, Guansheng Yao

Proceedings Volume 8908, 890818 (2013) https://doi.org/10.1117/12.2033170

KEYWORDS: Cadmium sulfide, Diodes, Ultraviolet radiation, Ultraviolet detectors, Platinum, Missiles, Infrared detectors, Electrodes, Detector development, Sputter deposition

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With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

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