Superconducting hot electron bolometers (HEBs) are widely used as terahertz (THz) heterodyne detectors (mixers) and becoming the most advantageous candidate for low noise receiver at frequencies above 1.2 THz. However, there is still lack of accurate theoretical modeling which explains the complex mechanism of different aspects of superconducting HEBs. These difficulties do not prevent researchers around the world from making experimental progress. In the last few years, superconducting HEBs are also used as THz direct detectors to develop the array for the applications in biology, medicine and security systems. Recently, a noise equivalent power (NEP) of 0.2 pW/√Hz at 2.5 THz is reported for the superconducting HEBs with thermal biasing. Instead of thermal one, microwave (MW) which was first used to stabilize the HEB mixer is also applied to bias the device as a direct detector. Furthermore, THz can be used to bias the HEBs, if THz sources can be provided easy.
Although MW biasing can improve sensitivity of the superconducting HEB direct detectors, little work has been done to compare the responsivity and NEP among the THz direct detectors with thermal, THz and MW biasing. To find a best biasing method, we have studied the similarities and differences of the direct detectors based on the superconducting HEBs with three different biasing methods.
The fabricated NbN HEB detectors consist of a complementary logarithmic-spiral antenna made of gold and an NbN film (bridge) connecting across the antenna’s inner terminals. We have fabricated the niobium nitride (NbN) superconducting HEB mixers with the system double sideband (DSB) noise temperature better than 8 times of the quantum limit: hf/kB (where h is the Planck constant, kB is the Boltzmann constant and f is the operating frequency) at the frequencies higher than 1 THz.
Here, the mixer chips with the system DSB noise temperature of about 400 K and the intermediate frequency (IF) gain bandwidth (GBW) of larger than 5 GHz at 4.2 K and 0.65 THz have been used. As the direct detectors, the current responsivity of 290 A/W and 105 A/W are obtained for MW and THz biasing, which about one order higher than that of thermal biasing. The NEP of 2.7 pW/√Hz is obtained with MW biasing, which can be expected to be improved in the future.
We design and simulate planar antenna structure on the high- resistivity silicon substrate(ρ=1000Ω·cm) for the Nb5N6 micro- bolometer at the frequency range from 0.265 THz to 0.365 THz by CST Studio Suite. We have obtained the center frequency of the antenna at 0.3 THz by optimizing parameters of the antenna structure and the antenna has the very good radiation directivity. And the maximum directivity of the antenna is around 8.634 dBi at 0.3THz. The measured best voltage response of the Nb5N6 micro-bolometer detector is at 0.307 THz. The measured response frequency and the simulated S-parameter are in substantial agreement.
Superconducting niobium nitride (NbN) hot electron bolometers (HEBs) have been used widely in the astronomical observations with its low noise temperature [1] (a few times of the quantum noise limit) as heterodyne detectors. On the other hand, with high temperature coefficient of resistance (TCR) and low noise characteristics, NbN HEB can be considered as direct detectors. Combined with NbN material’s quick response property (response time:~ps), NbN HEB direct detector can be used in quick terahertz (THz) imaging and weak THz ultrashort pulse signal detection. A direct detector system similar to the microwave stability system[2] in our lab has been constructed. The injected microwave is used to suppress the superconducting current and bias the HEB to an optimum bias point combined with the constant DC voltage source. The bias current changes corresponding to the incident THz signal power is read out by the dynamic signal analyzer. Compared to the thermal bias method which used the heating methods to heat the HEB to its critical temperature, the proposed method can enhance the direct detector’s stability and decrease the consumption of the liquid helium, which is key for the long time observations in the astronomical field and so on. More importantly, we found that our method can enhance the TCR of the NbN HEB from 8.45/K with the thermal bias method to 961/K. We obtained the noise equivalent power (NEP) of 1.4×10-12 W/Hz1/2 at 4.2 K and 0.65 THz. This value is mainly limited by the read out circuit at this moment. The response time of 86 ps is obtained in the separate measurement. Further improvement of NEP can be realized with optimizing the read out circuit.
In order to effectively improve the coupling efficiency of terahertz (THz) detectors, we design a grating-coupled structure on the high-resistivity silicon substrate for 0.2 THz to 0.35 THz band to enhance the ability of coupling terahertz signals. We simulated the electric field distribution of the grating-coupled structure in surface and inside by using the finite difference time domain (FDTD) method. The electric field in the central area of the silicon surface can be enhanced more than 4 times compared with the non-structure silicon substrate. We also simulated the Fabry-Perot cavity in the frequency range from 0.2 THz to 0.35 THz, and the electric field in the central area of the silicon surface can be improved one time compared with the non-structure silicon substrate. In addition, the electric field distribution on the silicon surface can be changed by adjusting parameters of the grating-coupled structure. When the period of the grating is 560 μm, the width of the gold is 187 μm, and the thickness of the silicon substrate is 720 μm, a 4.7 times electric field could be achieved compared with the non-structure silicon substrate at 0.27 THz and around. So, the simulation result shows that the grating-coupled structure has an obvious advantage compared with the Fabry-Perot cavity at THz coupling efficiency.
We present a readout circuit for 1 × 64 Nb5N6 microbolometer array detector. The intrinsic average responsivity of the detectors in the array is 650 V/W, and the corresponding noise equivalent power (NEP) is 17 pW/√Hz. Due to the low noise of the detector, we design a low noise readout circuit with 64 channels. The readout integrated circuit (ROIC) is fabricated under CMOS process with 0.18μm design rule, which has built-in bias and adjustable numerical-controlled output current. Differential structure is used for each pixel to boost capacity of resisting disturbance. A multiplexer and the second stage amplifier is followed after the ROIC. It is shown that the ROIC achieves an average gain of ~47dB and a voltage noise spectral density of ~9.34nV/√Hz at 10KHz. The performance of this readout circuit nearly fulfills the requirements for THz array detector. This readout circuit is fit for the detector, which indicates a good way to develop efficient and low-cost THz detector system.
Diffractive silicon microlens with ten staircases is designed and analyzed in this paper. The power distribution at the focal plane of the microlens is calculated and frequency dependence and focusing performance of the microlens is also evaluated by a FDTD method The simulation results show the diffractive lens has a good ability of focusing at 0.3 THz and around, and thus it can improve the coupling efficiency of the incident power into the Nb5N6 microbolometers. Development of a focal plane array (FPA) using such devices as detectors is favorable since diffractive microlens array has many advantages, such as light weight, low absorption loss, high resolution, and the most important point is that the microlens array can be easily integrated by ready mass production using standard micro-fabrication techniques.
We present the experimental demonstration of a quasioptical terahertz (THz) detector. It is based on the series connection of three Nb 5 N 6 microbolometers. This detector is of high responsivity and broadband response to THz signals. The maximum optical responsivity is 428 V/W at 0.245 THz and the minimum is 102 V/W at 0.367 THz. The thermal time constant of the detector has been demonstrated to be 1.3 μs, which is similar to the ones obtained for single-element microbolometers. These results make arrays of antenna-coupled Nb 5 N 6 microbolometers promising for the development of pixels in THz focal-plane arrays.
A 1 × 16 Nb5N6 microbolometer array for a terahertz (THz) imaging system has been demonstrated. The system consists of an objective lens and an extended hemispherical silicon lens. A finite difference time domain (FDTD) method was used to analyze the imaging system in detail. The calculated field-of-view of the system is about 7° and the half-power beam width is about 160 μm. The microbolometer array chip is attached to the silicon lens for 0.3 THz detection. The preliminary results for the actual system shows that the mutual coupling among these antenna integrated elements can be
ignored when the spacing is larger than 500 μm. The calculated results agree with the experimental data well, which
means that the FDTD method can be used to evaluate and optimize such a compact THz imaging system. This linear
imaging system should find direct application in active THz imaging.
In order to accurately characterize the radio frequency (RF) responsivity of the antenna-coupled detector in the terahertz (THz) band, we introduce an iterative deconvolution algorithm to extract the effective receiving area. We use this method to characterize an antenna-coupled Nb 5 N 6 microbolometer as an example. The effective receiving area is approximately 0.7 mm 2 , which is 7.4 times larger than the physical area of the detector. The RF responsivity of the Nb 5 N 6 microbolometer is 480 V/W at 0.28 THz, including the effect of the antenna coupling and the substrate interference. This work offers an effective way to characterize antenna-coupled THz detectors and to analyze the element-to-element spacing along two orthogonal directions in THz focal plane array chips.
In recent years our team has done a lot of work toward the goal of sensitive, inexpensive detectors for terahertz
detection. In this paper we describe simple fabrication steps and the characterizations of uncooled Nb5N6
microbolometers for terahertz imaging. The best dc responsivity of the Nb5N6 microbolometer is –760 V/W at the bias
current of 0.19 mA. A typical noise voltage as low as 10 nV/Hz1/2 yields a low noise equivalent power (NEP) of 1.3×10-11 W/Hz1/2 at a modulation frequency above 4 kHz. We constructed a quasi-optical type receiver by attaching this
uncooled Nb5N6 microbolometer to the hyperhemispherical silicon lens. Subsequently, the imaging experiment is
performed using this Nb5N6 microbolometer receiver at a THz imaging system.
Compressing the temporal correlation of two photons to the monocycle regime (3.56 fs, center wavelength: 1064 nm)
is expected to open up new perspectives in quantum metrology, allowing applications such as submicron quantum
optical coherence tomography and novel nonlinear optical experiments. To achieve this, the two-photon state must
essentially be ultra-broadband in the frequency domain and ultra-short in the time domain. Here, we report the successful generation of such ultra-broadband, frequency-correlated two-photon states via type-0, cw-pumped (532 nm) spontaneous parametric down conversion using four PPMgSLT crystals with different chirp rates of their poling periods. For the collinear condition, single-photon spectra are detected using a Si-CCD and an InGaAs photodiode array with a monochromator, while for a noncollinear condition, an NbN meander-type superconducting single photon detector (SNSPD) and an InP/GaAs photomultiplier tube (PMT) with a laser line Bragg tunable bandpass
filter are used. The broadband sensitivity of the SNSPD and PMT in the near-infrared wavelength range enable singleshot observations with a maximum bandwidth of 820 nm among the four samples. Such spectra can in principle achieve a temporal correlation as short as 1.2 cycles (4.4 fs) with the use of appropriate phase compensation, which can be measured using the sum-frequency signal. We also discuss several detection strategies for measuring coincidence counts in the presence of wavelength-dependent optical elements as a step towards frequency correlation measurements.
KEYWORDS: Luminescence, Single photon detectors, Superconductors, Fiber couplers, Linear filtering, Signal detection, Mid-IR, Single mode fibers, Absorption, Nanowires
Superconducting nanowire single photon detectors (SNSPD) have unique characteristics of ultra low dark counts and
wide spectrum sensitivity. These natures are indispensable for the evaluation of ultra-broadband parametric fluorescence,
which are used for the quantum optical coherence tomography and novel optical non-linear experiments. Here we report
the spectral dependence of the detection efficiency of a meander type SNSPD device, having reduced strip width of 50 nm, over a wide spectrum range up to near infra-red wavelength. The fiber coupled, meander type device was
fabricated using 6 nm thick Niobium nitride (NbN) nanowires of reduced strip width, 50 nm, patterned over a MgO
substrate with active area of 10 x 10 μm2. A maximum efficiency of 32% at 500 nm, 30% at 600 nm, 16% at 800 nm,
10% at 1000 nm, and 1% at 1550 nm with the normalized bias current of 0.95 (bias 37 μA ) was observed at 4.2 K. The
salient feature of the device is, it exhibits a very low dark count rate (DCR) of only 2 Hz at the standard operating bias of
37 μA and ultra low DCR of 0.01Hz at 34 μA. Moreover, at this reduced bias with 0.01Hz DCR, the detection efficiency
is not appreciably decreased in the visible region (32% at 500 nm and 30% at 600 nm) and an order decrease is observed
(0.1%) at 1550 nm. The noise equivalent power (NEP) is of the order 10-19WHz-1/2 in the visible region and 10-17 WHz-
1/2 in the near IR region. Ultra-broad band parametric fluorescence of band width from 791 nm to 1610 nm generated by
a quasi-phase matched (QPM) device was successfully detected with this SSPD.
Onto a double layer, which is made of a Si substrate ( ρ> 1000 Ω·cm ) and a SiO2 layer 100 nm thick
on top of it, a Nb5N6 thin film microbridge is deposited and integrated with an aluminum bow-tie
planar antenna. With a SiO2 air-bridge further fabricated underneath the microbridge and operated
at room temperature, such a combination behaves very well as a bolometer for detecting signals at
100 GHz, thanks to a temperature coefficient of resistance (TCR) as high as -0.7% K-1 of the Nb5N6 thin film. According to our estimations, the best attainable electrical responsivity of the bolometer is
about -400 V/W at a current bias of 0.4 mA. The electrical noise equivalent power (NEP) is 6.9x10-11 W/Hz1/2 for a modulation frequency at 300 Hz and 9.8x10-12 W/Hz1/2 for a modulation frequency
above 10 kHz respectively, which are better than those of commercial products (such as Golay cell
and Schottky diode detectors). A quasi-optical receiver based on such a bolometer is constructed and
measured.
A fiber-coupled superconducting nanowire single photon detector is presented
considering practical applications. The system performances, such as dark count rate, system
efficiency and noise equivalent power, are discussed. A system efficiency of 3% (1550 nm) and a
dark count rate of 10 Hz at 4.2 K were achieved in experiment.
A millimeter (mm) wave broadband video detecting system using high temperature superconducting (HTS) junction and compact pulse tube cryocooler (PTC) has been studied. The lowest attainable temperature of the PTC is 42K and the operating temperature (T) can be adjusted by changing the pressure difference in the compressor. By measuring the linewidth of the Josephson oscillation as well as the dynamic range of the Josephson detector, it is found that the PTC has no excess noise compared with other kinds of cryostats such as liquid helium cryostats, and is very suitable for the applications in the mm wave detecting system. Furthermore, to improve the sensitivity of the system, the coupling efficiency of the system has been studied in detail. It is found that the coupling efficiency increases with the increase of RN linearly, and is better than 1% for RN of 1.7 Ohm. A sensitivity of about 318V/W has been obtained for the system based on the PTC and a junction with RN=1.7 Ohm and ICRN =1mV.
Using high temperature grain boundary Josephson junctions (GBJJs) made of YBa2Cu3O7-(delta ) (YBCO) deposited across silicon bicrystal boundary, we successfully demonstrated direct detection at wavelength as short as 118.8 micrometer (frequency of 2.525THz) and the operation temperature up to 70 K. Radiation from a far infrared (FIR) laser was coupled to the junction, via a TPX plano convex lens and a high resistivity Si hyperhemispherical lens. The response at wavelength of 183.4 micrometer was obtained for the YBCO GBJJs on MgO bicrystal substrates. Also, investigated are the effects of response on external DC magnetic fields and polarization of electromagnetic waves as well as the harmonic mixing properties.
The electric field effects on bi-crystal YBa2Cu3O7-(delta ) grain boundaries were studied. The field effects were examined for an inverted MIS structure sample, in which a channel was arranged across the grain boundary on the SrTiO3 bicrystal substrate served as an insulator with the thickness of 50 micrometers . The field-induced change in the normal resistance was enhanced not only by an increase in the dielectric constant of gate insulator but also by a reduction in the carrier density nearby the grain boundary. For the sample with the YBCO thickness of 1,000 angstroms, the gate voltage of 80 V corresponding to 2 X 104 V/cm induced the relative changes in the normal resistance up to around 5%. The grain boundary junctions showed hysteretic I-V properties and sub-gap structures caused by the self-excited resonance of ac Josephson effect. Significant field effects on the hysteresis and sub-gap structures were observed. These effects were attributable to the field-induced changes in dielectric properties of the grain boundary. It was apparent that the effective dielectric constant of the grain boundary was several tens and decreased with increasing gate voltages.
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