A double-beam laser shockwave cleaning (DLSC) process is applied to clean nanoparticles on silicon wafer to eliminate the formation of uncleaned blind zone right under the plasma kernel. The size of the uncleaned blind zone in DLSC is reduced by 95% compared to the single-beam laser shockwave cleaning process. The study of the time-resolved plasma evolution suggests that the formation of multiple plasma kernels makes the nanoparticles in the blind zone exposed to the cleaning-effective zone of the nearby passing plasma. The theoretical calculation of the shockwave force distribution shows that the horizontal drag force from a nearby passing plasma in the DLSC process facilitates the nanoparticle removal in the blind zone.
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