VO2 thin films were prepared from V2O5 films using post-deposition annealing in vacuum. The films obtained have been studied by using XRD, XPS, SEM, UV-VIS and electrical measurements. The results show that the samples prepared at the optimal conditions before and after phase transition the resistance of VO2 thin film changes about 103 orders and the transmittance of 900nm light change 40%. Different preparation conditions can change the phase transition properties in VO2 thin films. The structural properties of samples are improved but the phase transition properties are declined by the increase of annealing time and annealing temperature. The best reasonable annealing time and annealing temperature has been got by discussing the effects of annealing time and annealing temperature on the phase transition point and hysteresis width. Other factors that affect the optical and electrical properties in VO2 thin films have also been discussed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.