Prof. Jifang Tao Profile

Prof. Jifang Tao

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Proceedings Article | 6 May 2024 Paper

Demonstration of a silver-based hydrogen sulfide gas sensor with high performance

Xin Tian, Jifang Tao

Proceedings Volume 13107, 1310705 (2024) https://doi.org/10.1117/12.3029167

KEYWORDS: Sensors, Gas sensors, Silver

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Hydrogen sulfide (H₂S) detection with high selectivity and fast response is of great significance due to its strong toxicity both to the environment and humans. In this paper, the design, fabrication, and characterization of a hydrogen sulfide gas sensors with a good temperature uniformity, highly selectivity and fast response is presented. Response tests show a fast response time of 100ppm H₂S with 2s at 350 °C operating temperature, and the limit of detection (LOD) is 134 parts-per-billion (ppb) in ambient conditions. Selectivity tests indicated that these sensors have poor respond to interfering analytes such as hydrogen, methane, carbon monoxide, ammonia and sulfur dioxide and the selectivity coefficients of H₂S are greater than 88. Silver-based hydrogen sulfide sensor offers advantages such as remarkable potential for mass production due to their ease of manufacturing, good performance, and significant selectivity.

Proceedings Article | 28 March 2024 Paper

Demonstration of a micro-hotplate chip with a good temperature uniformity

Xin Tian, Jifang Tao, Jia Zhao

Proceedings Volume 13091, 130912J (2024) https://doi.org/10.1117/12.3024989

KEYWORDS: Gas sensors, Temperature distribution, Microelectromechanical systems, Power consumption, Design, Sensors

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The gas sensor based on Micro-electromechanical system (MEMS) technology has the advantages of high sensitivity, small size, good batch uniformity and low power consumption. It has become an important development direction of the next-generation semiconductor gas sensor. This paper focuses on the design of the micro-hotplate chip for MEMS gas sensors. A type of micro-hotplate chip design with an isothermal hot area (±15 K) accounting for 90% is demonstrated through both the thermal theory analysis and the finite element simulation of the physical field, effectively resolving the issue of broad area uniform heating in the micro-sized chip in MEMS gas sensor designs. The infrared thermal image test results show the temperature of four points from edge to center of heating area are 295.5 °C, 287.5 °C, 289 °C, 294.8 °C respectively, which indicates the heat uniformity of micro-hotplate. Due to the limitation of a low temperature film deposition process, the maximum stress of the micro-hotplate films is about 1500 MPa, and at 375 °C operating temperature, the power consumption per area is only 4.5×10-4 mW/μm².

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