We present an overview of Everspin’s proprietary Spin-Transfer Torque (STT) MRAM technology. We have optimized our perpendicular MTJ STT-MRAM technology to achieve high-speed reliable switching over the temperature range of -40°C to +85°C with data retention of more than 10 years at +105°C and endurance of greater than 1e15 cycles at -40°C. This advanced STT-MRAM technology has been deployed in commercially available 1Gb ST-DDR4 stand-alone memory and low-latency 64Mb serial peripheral interface (SPI) STT-MRAM products, both integrated on 28 nm CMOS technology.
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