Pt/anodized TiO2/SiC based metal-oxide-semiconductor (MOS) devices were fabricated and characterized for their
sensitivity towards propene (C3H6). Titanium (Ti) thin films were deposited onto the SiC substrates using a filtered
cathodic vacuum arc (FCVA) method. Fluoride ions containing neutral electrolyte (0.5 wt% NH4F in ethylene glycol)
were used to anodize the Ti films. The anodized films were subsequently annealed at 600 °C for 4 hrs in an oxygen rich
environment to obtain TiO2. The current-voltage (I-V) characteristics of the Pt/TiO2/SiC devices were measured in
different concentrations of propene. Exposure to the analyte gas caused a change in the Schottky barrier height and hence
a lateral shift in the I-V characteristics. The effective change in the barrier height for 1% propene was calculated as
32.8 meV at 620°C. The dynamic response of the sensors was also investigated and a voltage shift of 157 mV was
measured at 620°C during exposure to 1% propene.
Carbon thin films can be prepared with properties that make them suitable for applications in electronics including heat
sinks, electrical interconnects transistors and chemical sensors. In this work, we examine the microstructure and
normalised through film electrical resistance of oriented and non-oriented carbon films deposited onto silicon substrates
at room temperature using a Filtered Cathodic Vacuum Arc (FCVA). Electrical measurements have also been performed
on carbon films which were lithographically patterned to produce test structures resembling vertical interconnects. Twopoint,
through-film current-voltage measurements of NiCr/Carbon/Si structures showed that the electrical resistance of
the carbon films could be varied by several orders of magnitude simply by selecting different substrate bias voltages.
Importantly, carbon films composed of vertically aligned graphene sheets were found to provide low resistance, linear
current-voltage characteristics, indicating the formation of Ohmic junctions at the NiCr and Si interfaces of the
NiCr/Carbon/Si structure.
A Filtered Cathodic Vacuum Arc (FCVA) thin film deposition system has been used to create Al2O3/Al/Al2O3 trilayer
antireflection coatings on silicon. X-ray photoelectron spectroscopy was used to verify the stoichiometry of the
deposited alumina. The optical properties of the deposited Al2O3 and Al have been examined using variable angle
spectroscopic ellipsometry. The complex refractive index functions of the antireflection coating components were
determined. Optical thin film software was used to optimise the required thicknesses of each of the layers in order to
achieve minimum perpendicular reflection on silicon across the optical spectrum. The simulations showed that the
thickness of the Al layer was critical and the required layer thickness was less than 10 nm. Antireflection coatings with
various Al layer thicknesses were deposited and characterised. The microstructure of the coatings was examined, in
detail, using cross sectional transmission electron microscopy. Reflectance measurements on the deposited coatings
were also performed, with the optimised antireflection coating (with an Al layer thickness of 6 nm) achieving an average
reflectance of 4% on silicon over the optical spectrum. The FCVA deposited trilayers are mechanically robust, easy to
fabricate and exhibit high performance.
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