Top surface imaging (TSI) techniques using vapor or liquid phase silylation have been investigated extensively as
alternatives to conventional resist processing. However, earlier imaging schemes such as diffusion enhanced silylated
resist (DESIRE) and digital top surface imaging showed several difficulties limiting the successful application of such
TSI approaches. In the case of DESIRE, additional CF4 plasma descum process was required to remove the thin layer of
Si incorporated into the cross-linked regions, as some of the Si remained even in the unexposed regions. Also, difference
in the cross-linking density and subsequent amount of silicon incorporation across the width of an optically projection
printed feature led to non-uniform silylation profiles resulting the difficulty with critical dimension (CD) control of the
feature and increased the LER of the overall process. In the case of digital TSI, even though it was developed to
overcome these problems with the cross-linking-based silylation process, the concentration of active sites in the exposed
polymer varies across the feature width due to the non-uniform energy deposition profile across a feature which results
from the non-ideal aerial image produced using optical projection tools.
In this study, we have used a diazoketo-functionalized polymer as the platform for the immobilization of amine-functionalized
poly(dimethyl siloxane) (amine-PDMS). The diazoketo functional groups undergo Wolff rearrangement
to generate carboxylic acid groups upon UV light exposure. This chemistry is exploited to create alternate
hydrophilic/hydrophobic patterned regions by selective UV light exposure. The hydrophilic regions that contain
carboxylic acid groups predominantly are further used to immobilize amine-PDMS by amide bond formation using
carbodiimide coupling chemistry. Due to the high silicon content, the immobilized PDMS acts as the etch barrier for the
subsequent oxygen plasma reactive ion etching (O2-RIE) process. Thus, a negative-tone pattern has been successfully
generated using O2-RIE process. An amine-PDMS with a molecular weight of 900 was used in this study. Auger electron
spectroscopy was employed to characterize the immobilization of amine-PDMS onto UV light exposed regions of
diazoketo-functionalized polymer surface. Atomic force microscopy was used to study the surface smoothness after O2-RIE process. Scanning electron microscopy was used to image the pattern profiles formed after O2-RIE process. High
resolution pattern profiles are obtained using the TSI process reported in this study.
A simple lithographic process in conjunction with a novel biocompatible nonchemically amplified photoresist material
was successfully used for the patterning of biomolecules such as cells and proteins. UV light irradiation on selected
regions of the nonchemically amplified resist film renders the exposed regions hydrophilic by the formation of
carboxylic groups. Mouse fibroblast cells were found to be preferentially aligned and proliferated on the UV light
exposed regions of the nonchemically amplified resist film, where carboxylic groups were present. For streptavidin
patterning, amine-terminated biotin was linked to the carboxylic groups of the UV light exposed regions, which was
further used to bind streptavidin to the UV light exposed regions.
A novel monomer containing a diazoketo functional group was designed and synthesized. Polymers were synthesized
using the diazoketo-functionalized monomer and their physical properties were evaluated. The polymers were
synthesized by radical copolymerization of cholic acid 3-diazo-3-ethoxycarbonyl-2-oxo-propyl ester methacrylate,
methyl methacrylate, and γ-butyrolacton-2-yl methacrylate. These polymers showed 0.7 &mgr;m line and space patterns using
a mercury-xenon lamp in a contact printing mode.
As an ultrafast laser has recently been developed, this leads to the innovative nanotechnology, the 3-D fabrication of
the two-photon absorbed (TPA) photo-polymerization. The 3-D micro/nano structure by this method has a resolution of
sub-hundred nm which is much smaller than the diffraction limit. Usually the 3-D polymer micro/nano structure by this
method is made by stacking many of a unit polymer structure, so called 'voxel'. The size of the voxel is considered as
the fabrication resolution. The size of a voxel, or the fabricating resolution is determined by several fabricating
conditions such as the laser output power, the exposure time, the N.A. of the focusing lens, the types of polymerizing
material, and the pulse-width. The voxel size due to power, exposure time and NA has been done by many research
groups. Although the pulse-width is a very important condition for two-photon absorption, the study of influence on
fabricating resolution by the pulse-width has not been done before. Therefore we studied the voxel size under the
condition of increasing the pulse-width of the laser. To stretch the pulse-width, a single mode fiber (SMF) has been
used. We demonstrated that the voxel lateral size decreased as pulse-width stretched to several picoseconds.
Negative working nanomolecular resists based on fully epoxy-protected tetra-Cmethylcalix[4]resorcinarene (epoxy C-4-R) and oxetanyl-protected tetra-methylcalix[4]resocinarene (oxetanyl C-4-R) have been developed. They were prepared by the reaction of C-4-R with epichlorohydrin or in the presence of trimethylamine. They can be coated on the silicon wafer by spin-coating method. A clear film cast from a 20 wt% epoxy C-4-R solution in chloroform showed high transparency to UV above 300 nm. A fine negative image featuring 0.8 μm of minimum line and space patterns was observed on the film of the photoresist exposed to 40 mJ/ cm2 of Near UV-light by the contact mode.
In a general way, non-CARs consist of the matrix resins and photoactive compounds (PACs), and the dissolution properties of the resists are dependent on the amount of PACs. In common, I-line and G-line resists based on novolac and diazonaphthoquinone (DNQ) are typical non-CARs. But most PACs absorb much light in the deep UV, and they are poorly photobleached by deep UV exposure. This strong absorption of PACs prevents the deep UV light from reaching the bottom of the resist film, leading to scum and sloped pattern profiles. Several PACs which contain diazoketo groups have been reported for deep UV lithography. Our goal in this investigation is to find a proper resist that is processable without photoacid generator and induces both photobleaching in the deep UV regions and polarity change upon exposure. We thought diazoketo groups attached to the polymer side chains could give such effects. There is no necessity for the post-exposure bake step that is the cause of acid-diffusion. The diazoketo groups undergo the Wolff rearrangement upon irradiation in the deep UV, affording ketenes that react with water to provide base soluble photoproducts. The polymers were synthesized by radical copolymerization of 2-(2-diazo-3-oxo-butyryloxy)-ethyl methacrylate, 2-hydroxyethyl methacrylate, and γ-butyrolacton-2-yl methacrylate. The single component resist showed 0.7μm line and space patterns using a mercury-xenon lamp in a contact printing mode.
We synthesized a new type of polymers that have diazoketo groups instead of acid-labile protecting groups. The polymers do not need a photoacid generator for formulation of resists. That is, the new matrix polymers absorb UV light and produce carboxylic groups. Also, there is no necessity for a post-exposure bake step, which is the cause of post-exposure delay effects. New monomer, ethyl 2-diazo-4-methyl-3-oxo-pent-4-enoate was synthesized. This monomer was copolymerized with hydroxystyrene and adamantyl methacrylate. After UV exposure, the polymers became soluble in an aqueous base developer. The polymers showed bleaching effect after UV exposure. Thermal properties of the polymers were measured by TGA and DSC. Characterization of the polymers has been done using other techniques such as FT-IR, NMR, GPC, and UV. The resist patterns of 0.8 μm feature size were resolved using a DUV contact printer and with a tetramethylammonium hydroxide aqueous solution.
To satisfy the upcoming demand of next generation lithography, new chemically amplified resist materials should be developed that can perform at the limit where the image feature size is on the order of molecular dimensions. Amorphous low-molecular-weight materials have several advantages over conventional polymeric systems. First, the limit of resolution can be enhanced since the building block of the image feature shrinks to the small molecule. Second, nanomolecular materials do not have chain entanglement due to the short chain length. Third, resist molecules that are free of intermolecular chain entanglement may decrease line edge roughness at very small feature sizes. Fourth, they can be coated on the silicon substrate by spin coating method because of their amorphous properties. Herein we studied several nanomolecular resists for 193-nm lithography. Adamantane was used as a core and two cholate derivatives were attached to adamantane.
A novel nanomolecular resist based on POSS substituted with diazodiketo-functionalized cholate derivatives was successfully synthesized as a candidate for 193-nm lithography. The diazodiketo group was introduced into the cholate derivatives to provide the solubility change and to eliminate the problems of chemically amplified resists. The decomposition temperature of the resist was found to be 130°C. The initial lithographic studies showed the feasibility of the resist to be used as a candidate for 193-nm lithography.
By using inclusion chemistry, low-molecular-weight organic materials such as 8-hydroxy-quinoline derivative-metal complexes (ZnQ2, AlQ3) were encapsulated by t-butyloxycarbonyloxy (t-BOC)-protected β-cyclodextrin to increase their processibility and to protect them against atmospheric environment. Since the products showed increased solubility in common organic solvents such as tetrahydrofuran, methylenechloride, and chloroform, they could be processed by solution method like spin-coating. Their absorbance and emission spectra were nearly the same compared to their unmodified coordinated complex. By using deprotection reactions of t-BOC groups, these materials were patterned by a simple photolithographic process.
Novel water-developable negative resists were designed to induce both cross-linking and polarity change upon exposure and bake. The matrix polymers were synthesized by copolymerization of glyceryl methacrylate and methacrolein. The acid-catalyzed acetalization of the polymer induced cross-linking, polarity change, and increase in dry-etch resistance. The resist formulated with this polymer and cast in a water-ethanol mixture, showed 0.7 μm line and space patterns using a mercury-xenone lamp in a contact printing mode and pure water as a developer.
We synthesized a new type of norbornene-maleic anhydride copolymer which as diazoketo groups instead of acid labile protecting groups. The matrix polymer does not need a photoacid generator for the lithographic evaluation. And there is no necessity for the post-exposure bake step that is the cause of PED effects. Methyl 5-norbornenyl-3-oxopropionate was prepared by the reaction of acetyl norbornene with dimethyl carbonate in the presence of sodium hydride. And methyl 5-norbornenyl-2-diazo-3-oxopropionate was synthesized from the reaction between methyl 5-norbornenyl-3-oxopropionate and p-carboxybenzenesulfonyl azide. The polymer was prepared by free radical polymerization. Upon exposure to DUV light, diazoketo groups undergo a series of reactions that culminate in the formation of a carboxylic acid. The matrix polymer in the exposed region becomes soluble in the aqueous base developer. The polymer showed bleaching effect after exposure. Thermal stability of the polymer is measured by TGA and DSC. Characterization of the polymer is achieved using other techniques such as FT-IR, NMR, GPC, and UV. The resist patterns of 0.6 μm feature size were resolved using a KrF exposure tool and with a conventional developer, 2.38 wt% TMAH aqueous solution.
Outgassing from the resist causes volume shrinkage of the resist film and extensive damage to optical lenses of exposure tools. Image distortion and throughput loss can take place due to the outgassing. In this study, we designed and synthesized a new acid labile group, 7,7-dimethyloxepan-2-one, which was introduced into the matrix polymers for ArF chemically amplified resists. The 7,7-dimethyloxepan-2-one group was readily cleaved and the carboxylic acid functionality was formed by acid-catalyzed ring-opening reaction in the exposed region after post-exposure bake. The resist patterns of 0.22 μm feature size were obtained with a conventional developer using an ArF exposure tool.
The present paper describes a novel class of norbornene- based copolymers containing 7,7-dimethyloxepan-2-one acid labile groups. Poly(3-(bicyclo[2.2.1]hept-5-en-2- ylhydroxymethyl)-7,7-dimethyloxepan-2-one-co-5-((2- decahydronaphth-yl)oxycarbonyl)-norbornene-co-5-norbornene- 2-carboxxylic acid-co-maleic anhydride) was synthesized and evaluated as a potential chemically amplified resist for ArF lithography. The 7,7-dimethyloxepan-2-one group of the matrix polymer was readily cleaved and the carboxylic acid functionality was formed by acid-catalyzed ring-opening reaction in the exposed region after post-exposure bake. 0.12micrometers line and space patterns were obtained at a dose of 10 mJ cm-2 with a conventional developer, 2.38 wt% tetramethylammonium hydroxide aqueous solution, using an ArF excimer laser stepper.
A positive working molecular photoresist based on (beta) -cyclodextrin ((beta) -CD) and its inclusion complex ((beta) -CD-IC) has been developed. Cyclodextrin is one of the most important host molecules in supramolecular systems. 1-Adamantanecarboxylic acid (Ad-COOH) is employed as a guest molecule to increase the dry etch resistance. (beta) -CD and (beta) -CD-IC were protected with t-BOC to control the dissolution rate with various feed ratios of di-t-butyl dicarbonate. The t-BOC protecting ratio turns out about 34 mol% which corresponds to the protection of primary hydroxyl groups on the upper rim of (beta) -CD. The t-BOC-protected (beta) -CD has low absorbances at 248 and 193 nm, and good film forming property. Using t-BOC-protected (beta) -CD and (beta) -CD-IC, submicron patterns were delineated when it was exposed to a KrF stepper and developed with a 2.38 wt% aqueous TMAH solution.
Several molecular resist materials were synthesized for 193 nm photoresists. They include cholate derivatives as dendrimer cores and ester groups as peripheral parts. Cholate derivatives provide etch resistance and peripheral parts give coatability and acid-labile polarity change. They were synthesized using an acetal-protected anhydride derivative of 2,2-bis(hydroxymethyl)proponic acid as an acylating reagent. These dendrimer materials were grown to the 1st generation. t-Butoxy esters are attached to the end of peripheral parts for positive-tone resists. These molecular resist materials were coated well to the silicon wafer and show good sensitivity and etch resistance.
New silicon-containing polymers, poly{5-[(2- trimethylsilyl-2-propyl)oxycarbonyl]-norbornene-co-maleic anhydride} [poly(TMSPN-co-MA)] and poly{5- [(2-trimethylsilyl-2-propyl)oxycarbonyl]-norbornene-co- maleic anhydride-co-2-tri-methylsilyl-2-propyl methacrylate}, were synthesized for dually developable chemically amplified resists. The polymers exhibited relatively good transmittances at 193 nm and have good thermal stability up to 190 degrees Celsius. Poly(TMSPN-co-MA) was evaluated as a resist for ArF excimer laser lithography. 0.18 micrometer line and space patterns were obtained at a dose of 11 mJ/cm2 using the conventional wet developer with an ArF excimer laser stepper. 1 micrometer line and space patterns were obtained using dry development process with O2 reactive ion etching.
A chemically amplified resist containing a basic monomer, 3- (t-butoxycarbonyl)-1-vinylcaprolactam (BCVC), in the matrix polymer was synthesized with various monomer feed ratios. Diffusion and evaporation of photogenerated acid in the copolymer films were investigate for various fractions of the basic units in copolymers. It is found that only acid surviving deactivation by the BCVC units diffuses into unexposed areas and evaporates for the copolymer film to bleach the indicator film. Evaporation of a low molecular weight basic additive is also examined. Whereas the low molecular weight basic additive evaporated during baking, the basic monomer units in the copolymer did not evaporate at all due to covalent bonding to polymer backbone chain. Thus, the copolymer with the basic monomer can control the acid diffusion and evaporation effectively. The new resists system enables us to form fine patterns even after post- exposure delay of 2 h without any additional treatment.
Poly(2-trimethylsilyl-2-propyl methacrylate-co-(gamma) - butyrolactone-2-yl methacrylate) was synthesized and evaluated as a potential dry-developable chemically amplified photoresist. When the counterion of the photogenerated acid does not provide a fluoride ion, e.g., sulfonate, the carbonium ion undergoes elimination to produce 2,2,3-trimethyl-2-silabut-3-ene, and regenerates another acid. The deprotection of 2-trimethylsilyl-2-propyl group of the polymer takes place in the exposed region after post-exposure bake. The difference of silicon content between the unexposed and exposed regions is large enough to form patterns using oxygen reactive-ion etching. Poly(2- trimethylsilyl-2-propyl methacrylate-co-(gamma) - butyrolactone-2-yl methacrylate) was evaluated as a resists for ArF excimer laser lithography. 0.24 micrometers line/space patterns were obtained using the conventional developer with an ArF excimer laser stepper. 1 micrometers line/spacer patterns were obtained using dry development process with O2 reactive ion etching.
We have examined a novel class of ketal based deep UV photoresist. 1,4-Dioxaspiro(4,4)nonane-2-methyl methacrylate was synthesized and polymerized. A ketal group of poly(1,4- dioxaspiro(4,4)nonane-2-methyl methacrylate) hydrolyzes under acid catalysis to give two alcohol functionalities and a cyclopentanone molecule. The ketal polymer is insoluble in an aqueous developer, while the hydrolyzed products are soluble.It was found the cyclopentanone product affects diffusion of acid in the resist. As a result, the generated cyclopentanone increases mobility of the acid significantly.
In order to develop a new series of chemically amplified photoresists for 193-nm lithography, norbornene substituted with a steroid derivative was copolymerized with maleic anhydride by free radical polymerization. The resulting polymers have excellent transmittance at 193 nm and possess good thermal stability up to 260 degrees C. The resist formulated with the polymers showed better dry-etching resistance than the conventional poly(hydroxystyrene) resist for Cl2/O2 plasma. With the standard developer, the resists from 0.15-0.20 micrometers patterns at doses of 5-18 mJ/cm2 using an ArF excimer laser stepper.
A new process, dry developable chemically amplified resist system, was proposed. A new matrix polymer for this process was synthesized and characterized. The thermal deprotection of 2-trimethylsilyl-2-propyl group of the matrix polymer takes place at 200 degree(s)C, whereas the acid catalyzed deprotection begins at 100 degree(s)C. The difference of silicon content between unexposed region and exposed regions is large enough to form patterns using oxygen reactive-ion etching. The etching selectivity of the unexposed region to the exposed region was about 142. The matrix polymer has good transmittance at 248 nm and 193 nm. In addition, the polymer possesses good thermal stability up to 200 degree(s)C and high Tg.
In this paper we report here on lithographic performance of high resolution, environmentally stable and aqueous base developable positive tone resist for DUV lithography. There have been a lot of efforts to prevent the resist from suffering from the deactivation of acid during the delay time between exposure and post exposure bake (PEB). The new design of matrix resin containing amide functional group has advantages over current lithographic techniques. The effects of amide functional group as a basic additive in a chemically amplified resist was investigated. A new class of matrix resin containing amide functional group, poly(hydroxystyrene-co-t- butyl acrylate-co-3-(t-butoxycarbonyl)-1-vinyl-2-caprolactam), was developed. It showed 0.20 micrometer lines/spaces patterns of this resist using KrF excimer stepper (NA 0.55, partial coherence factor 0.55) with an exposure dose of 25 mJ/cm2. This resist showed no change of pattern profile after 2 hours post exposure delay in which ammonia concentration is 5 ppb. 3-(t-butoxycarbonyl)-1-vinyl-2-caprolatam (BCVC) unit as a basic additive can not only solve amine contamination effectively, but also improve the resolution of the resist. BCVC unit reduces the diffusion of acid and it results in sharp contrast at the interface between the exposed and unexposed areas. Therefore, adding BCVC unit in matrix resin leads to the stabilization of the pattern profile and higher resolution.
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