We report the fabrication and accurate measurement of propagation and bending losses in silicon wires with submicron
dimensions fabricated on silicon-on-insulator wafer. Propagation loss of 0.71±0.03dB/mm for the TE polarization was
measured at the 1.55μm. Loss of per 90º bend is measured to be 0.01dB for a bending radius of 5μm. Three types of
compact MMI splitters with different splitting-ratios were fabricated and measured. The splitting-ratios are respectively
50:50, 15:85 and 28:72. They exhibited low excess losses of about 1.5~3.9dB. The splitting-ratios were consistent with
the design values.
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