Photoconductive metal-semiconductor-metal ultraviolet detectors were fabricated based on the polycrystalline MgZnO films, which were grown on SiO2/Si substrates by radio frequency magnetron sputtering. The peak response of the detector was at 300 nm, which lay in the solar-blind spectrum range (220 to 300 nm). And the peak responsivity was 34.02 A/W. The ratio of Iph/Id was as high as 2659.7 at 5 V bias under a low pressure Hg lamp illumination. And a rise time of 44.48 μs (90%) and fall time of 120.2 ms (10%) of the detector were acquired.
ZnO thin films were grown on SiO2/Si substrates by radio-frequency magnetron sputtering. Based on the ZnO film, a photoconductive metal-semiconductor-metal ultraviolet detector was fabricated by a liftoff technique. Its I-V characteristics were observed at 365 nm, and a fast response was observed by illumination with a KrF excimer laser.
ZnO films were fabricated using Laser molecular beam epitaxy method on different substrates including Si(001), C-plane and R-plane Al2O3. The crystallinity and orientation of the films, as well as the epitaxial relationship between ZnO films and the substrate were studied using X-ray diffraction (XRD) technique. For the films grown on C-plane Al2O3 and Si(001) substrates, Highly c-axis oriented ZnO films were obtained. The surface morphology and roughness of ZnO films were determined by atomic force microscopy (AFM) and Reflection High Energy Electron diffraction (RHEED).
C-axis oriented ZnO thin films were epitaxially grown at 350°C on sapphire (0001) substrates by laser molecular beam epitaxy(L-MBE) with oxygen pressures of 1.1E-4Pa,1.8E-4Pa, 2.3E-4Pa,and 2.1E-3Pa. As oxygen pressure increases, the full-width at half maximum(FWHM) of X-ray diffraction(XRD) becomes smaller and the diffraction peak intensity for (0002) planes becomes more intense as well as the symmetry of the peak shape becomes improved. Photoluminescence (PL) spectra of all samples show two emissions of a strong UV near-bandedge(NBE) emission peak at approximately 377 nm and a weak green-yellow deep level emission around 520nm. The samples grown with higher oxygen pressure have higher intensities of luminescence at 377 nm and the ratio of UV emission to deep level emission intensities increases. Reflection high energy electron diffraction (RHEED) pattern of ZnO films changes from spotty pattern to streaky one step by step with higher oxygen pressure.
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