Mr. Jinhyun Lee Profile

Jinhyun Lee

at Univ of New Mexico

SPIE Involvement:

Author

Publications (7)

Proceedings Article | 18 June 2004 Paper

Optical and electrical properties of interdigitated InGaN/GaN green light-emitting diodes

Jinhyun Lee, Petr Eliseev, Marek Osinski, Dong-Seung Lee, Jeffrey Ramer, Doru Florescu, Eric Armour

Proceedings Volume 5349, (2004) https://doi.org/10.1117/12.540327

KEYWORDS: Light emitting diodes, Annealing, Green light emitting diodes, Resistance, Electroluminescence, Sapphire, Gallium nitride, Diodes, Magnesium, Quantum wells

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Proceedings Article | 25 July 2003 Paper

Properties of InGaN/AlInGaN/AlGaN quantum-well UV light-emitting diodes

Jinhyun Lee, Petr Eliseev, Marek Osinski, Dong-Seung Lee, Doru Florescu, Shiping Guo, Milan Pophristic

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.482325

KEYWORDS: Quantum wells, Light emitting diodes, Ultraviolet radiation, Gallium, Temperature metrology, Gallium nitride, Electroluminescence, Indium, Diodes, Aluminum

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Proceedings Article | 26 November 2002 Paper

Quaternary InAIGaN-based multiquantum wells for ultraviolet light-emitting diode application

Shiping Guo, Milan Pophristic, Dong Lee, Boris Peres, Ian Ferguson, Jinhyun Lee, Marek Osinski

Proceedings Volume 4776, (2002) https://doi.org/10.1117/12.457171

KEYWORDS: Quantum wells, Indium, Electroluminescence, Gallium nitride, Light emitting diodes, Ultraviolet light emitting diodes, Ultraviolet radiation, Aluminum, Reflection, Semiconducting wafers

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Proceedings Article | 13 September 2002 Paper

Applications of high-power laser technology to wide-bandgap nitride semiconductor processing

Petr Eliseev, Andrei Ionin, Yurii Klimachev, Dmitrii Sinitsyn, Jinhyun Lee, Marek Osinski

Proceedings Volume 4760, (2002) https://doi.org/10.1117/12.482082

KEYWORDS: Gallium nitride, Sapphire, Absorption, Laser ablation, Annealing, Gallium, Laser processing, Laser irradiation, Semiconductors, Laser applications

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Proceedings Article | 29 October 2001 Paper

Selective intermixing of InGaAs/GaAs/AlGaAs quantum wells with spin-on-glass/MgF2 grating caps

Yan-Rui Zhao, Julius Yellowhair, Jinhyun Lee, Shuang Zhang, Alex Raub, Ronghua Wang, Petros Varangis, Abdel-Rahman El-Emawy, Mauro Vilela, Marek Osinski

Proceedings Volume 4594, (2001) https://doi.org/10.1117/12.446541

KEYWORDS: Gallium, Quantum wells, Magnesium fluoride, Diffusion, Annealing, Dielectrics, Chemical species, Photonic integrated circuits, Lithium, Gallium arsenide

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Proceedings Article | 12 November 1999 Paper

Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

Marek Osinski, Petr Eliseev, Jinhyun Lee, Vladimir Smagley, Tamoya Sugahara, Shiro Sakai

Proceedings Volume 3896, (1999) https://doi.org/10.1117/12.370346

KEYWORDS: Indium gallium nitride, Gallium nitride, Quantum wells, Sapphire, Electroluminescence, Luminescence, Indium, Metalorganic chemical vapor deposition, Semiconductors, Diffusion

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Proceedings Article | 22 September 1995 Paper

Radiation hardness of periodic structures and related optoelectronic components

Edward Taylor, David Redman, Jinhyun Lee, B. Scott Phillips, Marek Osinski, Gajendra Savant, Tomasz Jannson

Proceedings Volume 2532, (1995) https://doi.org/10.1117/12.221263

KEYWORDS: Radiation effects, Polymers, Vertical cavity surface emitting lasers, Waveguides, Reflectivity, Directional couplers, Semiconductor lasers, Resistance, Gamma radiation, Signal attenuation

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Showing 5 of 7 publications

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