Dr. Jinqiao Xie Profile

Dr. Jinqiao Xie

at HexaTech Inc

SPIE Involvement:

Author

Publications (28)

Proceedings Article | 4 February 2013 Paper

Fabrication and characterization of lateral polar GaN structures for second harmonic generation

Marc Hoffmann, Michael Gerhold, Ronny Kirste, Anthony Rice, Christer-Rajiv Akouala, Jinqiao Xie, Seiji Mita, Ramon Collazo, Zlatko Sitar

Proceedings Volume 8631, 86311T (2013) https://doi.org/10.1117/12.2008827

KEYWORDS: Gallium nitride, Etching, Reactive ion etching, Aluminum nitride, Sapphire, Interfaces, Atomic force microscopy, Ultraviolet radiation, Metalorganic chemical vapor deposition, Harmonic generation

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Proceedings Article | 4 March 2011 Paper

Fermi level effect on strain of Si-doped GaN

Jinqiao Xie, Seiji Mita, Ramón Collazo, Anthony Rice, James Tweedie, Zlatko Sitar

Proceedings Volume 7939, 79390B (2011) https://doi.org/10.1117/12.878726

KEYWORDS: Silicon, Gallium nitride, Doping, Gallium, Silicon carbide, Carbon, Metalorganic chemical vapor deposition, Temperature metrology, X-ray diffraction, Diffusion

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Proceedings Article | 20 February 2009 Paper

Transient current spectroscopy of lattice matched InAlN/AlN/GaN HFETs for identification of traps resulting in gate lag

J. Leach, Q. Fan, J. Xie, M. Wu, Ü. Özgür, H. Morkoç

Proceedings Volume 7216, 72162L (2009) https://doi.org/10.1117/12.809795

KEYWORDS: Field effect transistors, Aluminum nitride, Gallium nitride, Measurement devices, Reliability, Spectroscopes, Spectroscopy, Temperature metrology, Heterojunctions, Heart

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Proceedings Article | 20 February 2009 Paper

Two dimensional electron gas in GaN heterojunction field effect transistors structures with AlN spacer

Qian Fan, Jacob Leach, Jinqiao Xie, Umit Ozgur, Hadis Morkoç, L. Zhou, D. Smith

Proceedings Volume 7216, 72162N (2009) https://doi.org/10.1117/12.811678

KEYWORDS: Aluminum nitride, Gallium nitride, Heterojunctions, Polarization, Field effect transistors, Data modeling, Metals, Scanning transmission electron microscopy, Nickel, Fluctuations and noise

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Proceedings Article | 20 February 2009 Paper

Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures

Bo Xiao, Jinqiao Xie, Vitaliy Avrutin, Qian Fan, Mo Wu, Hadis Morkoç

Proceedings Volume 7216, 72162M (2009) https://doi.org/10.1117/12.811671

KEYWORDS: Ferroelectric materials, Field effect transistors, Electrodes, Heterojunctions, Gallium nitride, Modulation, Semiconductors, Ferroelectric capacitors, Thin films, Switching

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Proceedings Article | 20 February 2009 Paper

Electrical defects in AlGaN and InAlN

D. Johnstone, Jacob Leach, Vladimir Kovalskii, Qian Fan, Jingqiao Xie, Hadis Morkoç

Proceedings Volume 7216, 72162R (2009) https://doi.org/10.1117/12.815020

KEYWORDS: Gallium nitride, Capacitance, Temperature metrology, Spectroscopes, Aluminum, Diodes, Semiconductors, Heterojunctions, Spectroscopy, Metalorganic chemical vapor deposition

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Proceedings Article | 16 February 2009 Paper

Reduction of efficiency droop in InGaN-based blue LEDs

X. Ni, X. Li, J. Xie, Q. Fan, R. Shimada, Ü. Özgür, H. Morkoç

Proceedings Volume 7216, 72161W (2009) https://doi.org/10.1117/12.809877

KEYWORDS: External quantum efficiency, Light emitting diodes, Electroluminescence, Quantum efficiency, Indium gallium nitride, Quantum wells, Doping, Gallium, Blue light emitting diodes, Luminous efficiency

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Proceedings Article | 15 February 2008 Paper

Comparative study of deep levels in GaN grown on different templates

J. Nie, S. Chevtchenko, J. Xie, X. Ni, H. Morkoç

Proceedings Volume 6894, 689424 (2008) https://doi.org/10.1117/12.767834

KEYWORDS: Gallium nitride, Epitaxial lateral overgrowth, Spectroscopy, Capacitance, Sapphire, Temperature metrology, Metalorganic chemical vapor deposition, Diodes, Active optics, Thermography

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Proceedings Article | 15 February 2008 Paper

AlxIn1-xN/GaN heterostructure field effect transistors

J. Xie, X. Ni, M. Wu, J. Leach, Ü. Özgür, H. Morkoç

Proceedings Volume 6894, 68941R (2008) https://doi.org/10.1117/12.771297

KEYWORDS: Aluminum nitride, Gallium nitride, Heterojunctions, Aluminum, Indium, Field effect transistors, Polarization, Metalorganic chemical vapor deposition, Temperature metrology, Scattering

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Proceedings Article | 15 February 2008 Paper

GaN Schottky barrier and metal-semiconductor-metal photodetectors with in situ SiNx nano-network

J. Xie, J. Mateo, Ü. Özgür, H. Morkoç

Proceedings Volume 6894, 68941S (2008) https://doi.org/10.1117/12.764245

KEYWORDS: Gallium nitride, Photodetectors, Metalorganic chemical vapor deposition, Sensors, Ultraviolet detectors, Diodes, Epitaxial lateral overgrowth, Gold, Silicon, Sapphire

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Proceedings Article | 15 February 2008 Paper

Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films

J. Moore, M. Reshchikov, J. Ortiz, J. Xie, H. Morkoç, A. Baski

Proceedings Volume 6894, 68940B (2008) https://doi.org/10.1117/12.768041

KEYWORDS: Gallium nitride, Electrons, Interfaces, Ultraviolet radiation, Oxides, Metalorganic chemical vapor deposition, Atomic force microscopy, Microscopy, Semiconductors, Gallium

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Proceedings Article | 15 February 2008 Paper

ZnO hybrid microcavities grown by plasma assisted molecular beam epitaxy

Ryoko Shimada, Jinqiao Xie, Vitaliy Avrutin, Ümit Özgür, Hadis Morkoç

Proceedings Volume 6895, 68950I (2008) https://doi.org/10.1117/12.762299

KEYWORDS: Polaritons, Zinc oxide, Reflectivity, Excitons, Optical microcavities, Photons, Molecular beam epitaxy, Aluminum, Interfaces, Plasma

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Proceedings Article | 15 February 2008 Paper

Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire

X. Ni, R. Shimada, J. Leach, J. Xie, Ü. Özgür, H. Morkoç

Proceedings Volume 6894, 689428 (2008) https://doi.org/10.1117/12.763260

KEYWORDS: Gallium nitride, Quantum wells, Epitaxial lateral overgrowth, Polarization, Sapphire, Optical properties, Quantum efficiency, Metalorganic chemical vapor deposition, Luminescence, Scanning electron microscopy

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The polarization fields in the c-axis-oriented hexagonal GaN system cause spatial separation of electrons and holes in quantum wells, reducing the quantum efficiency, and resulting in a red shift of the emission as well as a blue shift with increasing injected carrier density. In this paper, we report on the growth and optical characterization of InGaN/GaN multiple quantum wells (MQWs) on nonpolar (112¯0) a- and polar (0001) c-planes, as well as two semipolar planes, (112¯2) and (11¯01) of GaN. There are two kinds of a-plane used in this study. One of the (112¯0) a-planes was obtained on (11¯00) m-plane sapphire substrates during the epitaxial lateral overgrowth (ELO) of (112¯2) oriented semipolar GaN films, while the other one was planar a-plane GaN which was grown on (11¯01) r-plane sapphire substrates. The semipolar (112¯2) and (11¯01) planes were obtained as sidewall facets during the ELO of c-plane GaN with the mask stripes aligned along the GaN m-axis and a-axis, respectively. InGaN/GaN multiple quantum wells (MQWs) with a nominal well thickness of 4 nm and a barrier thickness of 8 nm were grown on these five GaN samples by metalorganic chemical vapor deposition. Excitation power dependent photoluminescence (PL) measurements were carried out on these quantum well structures to study the effect of polarization-induced electric field on the band-edge emission. The quantum-well emission energy from the two a-plane MQWs showed zero shift, compared to a 74 meV blue shift for the c-plane MQWs when the excitation power was increased from 1.3 mW to 37.0 mW. The semipolar (112¯2) showed a blue shift of 35 meV with increased excitation power, suggesting reduced polarization compared to that of c-plane. No quantum-well emission could be observed for the MQWs on (11¯01) semipolar planes. The shift in the quantum-well emission energy was attributed to the change of the screening effect of photon-generated carriers in the quantum wells at different excitation powers. For exact notation please see manuscript

Proceedings Article | 15 February 2008 Paper

Evolution of surface morphology of polar and nonpolar GaN thin films during photoelectrochemical etching

J. Leach, Ü. Özgür, X. Ni, J. Xie, H. Morkoç

Proceedings Volume 6894, 689425 (2008) https://doi.org/10.1117/12.762383

KEYWORDS: Etching, Gallium nitride, Epitaxial lateral overgrowth, Scanning electron microscopy, Thin films, Nanostructures, Transmission electron microscopy, Ions, Oxides, Active optics

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