Spectrum of light which is emitted or reflected by an object carries immense amount of information about the object. A simple piece of evidence is the importance of color sensing for human vision. Combining an image acquisition with efficient measurement of light spectra for each detected pixel is therefore one of the important issues in imaging, referred as hyperspectral imaging. We demonstrate a construction of a compact and robust hyperspectral camera for the visible and near-IR spectral region. The camera was designed vastly based on off-shelf optics, yet an extensive optimization and addition of three customized parts enabled construction of the camera featuring a low f-number (F/3.9) and fully concentric optics. We employ a novel approach of compressed sensing (namely coded aperture snapshot spectral imaging, abbrev. CASSI). The compressed sensing enables to computationally extract an encoded hyperspectral information from a single camera exposition. Owing to the technique the camera lacks any moving or scanning part, while it can record the full image and spectral information in a single snapshot. Moreover, unlike the commonly used compressed sensing table-top apparatuses, the camera represents a portable device able to work outside a lab. We demonstrate the spectro-temporal reconstruction of recorded scenes based on 90×90 random matrix encoding. Finally, we discuss potential of the compressed sensing in hyperspectral camera.
Pb(Zr,Ti)O3 (PZT) is a ferroelectric material interesting for its high dielectric constant and piezoelectric response. PZT thin films can be prepared by various methods, e.g. pulsed laser deposition, chemical vapor deposition, sol-gel and, most frequently, sputtering. Though the magnetron sputtering is used more frequently, PZT thin films can be prepared also by ion-beam sputtering (IBS). In this paper we study the deposition process of PZT thin films in our IBS system with a possibility of ion-beam assisted deposition (IBAD), which has the advantage that more energy can be added to the growing layer. We show how in our system the resulting layers, mainly their quality, the Pb content, which is important for the creation of the perovskite crystal structure, and the resulting crystal structure are influenced by the oxygen flux during the deposition for the samples grown on the silicon substrate with and without an intermediate Ti seeding layer.
Lead zirconate titanate (PZT) is widely used for its ferroelectric and piezoelectric properties, which are conditioned by perovskite structure. Crystallization into this desired phase is determined also by a proper stoichiometry, where the lead concentration is a crucial parameter. The crystallization process takes place during annealing under high temperatures, which is linked to heavy lead losses, so the lead has to be in excess. Therefore, this paper is devoted to the control of chemical composition of PZT thin films deposited via ion beam sputtering (IBS). A commonly used approach for IBS relies on employing a multicomponent target to obtain films with the same composition as that of the target. However, in the case of PZT it is favorable to have the ability to controllably change the chemical composition of thin films in order to acquire high perovskite content. Our study revealed that the determinative lead content in PZT layers prepared by simple and dual ion-beam deposition from a multicomponent target can be easily controlled by the power of primary ion source. At the same time, the composition is also dependent on the substrate temperature and the power of assistant ion source. Thin PZT films with more than 30 % lead excess were acquired from a stoichiometric multicomponent target (i.e. a target without any lead excess). We can therefore propose several possible sets of deposition parameters suitable for the PZT deposition via IBS to obtain high perovskite content.
Lead zirconate titanate (Pb[ZrxTi1-x]O3 ) is well-known for his excellent ferroelectric, piezoelectric and electromechanical properties. These properties are closely related to the perovskite crystal structure of PZT. A common way to achieve thin film of perovskite PZT is to anneal the layer after deposition. The high annealing temperature (600 – 700°C) limits a set of usable substrates. To grow a thin layer of perovskite PZT at reduced temperature it is necessary to add crystallization energy to the system by another way. In this article are presented some results of using ion beam sputtering system (IBS) with ion beam assistance (IBAD) to growth perovskite PZT layer at reduced temperature. This process is very complicated and the resulting layer properties are strongly influenced by deposition parameters (ions energy, chemical composition of the atmosphere in the sputtering chamber etc.). We achieved partial success when pyrochlore crystal structure of PZT was grown at reduced substrate temperature (110°C) (at this temperatures are the PZT layers usually amorphous)