Hexagonal boron nitride (h-BN), an insulating two-dimensional layered material, has recently attracted a great attention due to its fascinating optical, electrical, and thermal properties, and promising applications across the fields of photonics, quantum optics, and electronics. Here, we exploit the scalable approach to grow h-BN on epitaxial gallium nitride (GaN) substrate by using metal-organic chemical vapor deposition (MOCVD). It was found that at a specific MOCVD growth condition, a very unique h-BN film can be grown on GaN substrates, in which few-layer h-BN film is suspended on GaN nanoneedles. The combination of state-of-the-art microscopic and spectroscopic analyses revealed that the suspended h-BN films exhibit unprecedented DUV photoluminescence spectra. In addition, the h-BN films show unprecedented atomic stacking configuration, the mechanism of which will be discussed with optical and structural characterizations and theoretical calculations.
Although gallium nitride (GaN)-based electronic devices for next-generation have garnered increasing attention over the last few years, the formation of surface defects, which severely deteriorate device performances, is fundamentally unavoidable and surface passivation is highly desired. Herein, we report the realization of the clean van der Waals passivation layer, 2D hexagonal boron nitride (h-BN), directly grown on AlGaN/GaN HEMT wafer by using Metal-Organic Chemical Vapor Deposition (MOCVD) system. It was found that the hetero-interface between ~2.5 nm-thick h-BN and AlGaN layer is the atomically sharp with very weak van der Waals interaction, observed by state-of-the-art microscopic and spectroscopic analyses in consistent with calculations.The wafer-scale direct growth of atomically-thin-yet-electrically- “thick” h-BN would be very beneficial for miniaturization of not only compound semiconductor devices but also Si-based electronic devices.
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