Dr. Joachim Siebert Profile

Dr. Joachim Siebert

at Synopsys GmbH

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Author

Publications (6)

Proceedings Article | 28 April 2023 Presentation + Paper

Electrical analysis of a stochastically simulated 2 nm node electrical test structure

Lawrence Melvin, Wolfgang Demmerle, Joachim Siebert, Phil Stopford, Sergey Zavadskiy, Renato Hentschke, Krishna Ramkumar, Sylvain Berthiaume, Yudhishthir Kandel, Wolfgang Hoppe, Ulrich Klostermann, Zachary Levinson, Hans-Jürgen Stock, Ulrich Welling

Proceedings Volume 12495, 124950W (2023) https://doi.org/10.1117/12.2658780

KEYWORDS: Stochastic processes, Resistance, Simulations, Overlay metrology, Optical lithography, Lithography, Optical proximity correction, Ruthenium, Etching

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SPIE Journal Paper | 2 December 2013 Open Access

Impact of realistic source shape and flexibility on source mask optimization

Hirohiko Izumi, Keiichi Tajima, Joachim Siebert, Wolfgang Demmerle, Tomoyuki Matsuyama, Hajime Aoyama, Yasushi Mizuno, Noriyuki Hirayanagi, Naonori Kita, Ryota Matsui

JM3, Vol. 13, Issue 01, 011005, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011005

KEYWORDS: Source mask optimization, Scanners, Fiber optic illuminators, Critical dimension metrology, Photomasks, Optical proximity correction, Semiconducting wafers, SRAF, 3D modeling, Printing

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Proceedings Article | 12 April 2013 Paper

The impact of realistic source shape and flexibility on source mask optimization

Hajime Aoyama, Yasushi Mizuno, Noriyuki Hirayanagi, Naonori Kita, Ryota Matsui, Hirohiko Izumi, Keiichi Tajima, Joachim Siebert, Wolfgang Demmerle, Tomoyuki Matsuyama

Proceedings Volume 8683, 86830M (2013) https://doi.org/10.1117/12.2011353

KEYWORDS: Source mask optimization, Scanners, Optical proximity correction, Electroluminescence, Fiber optic illuminators, Photomasks, Critical dimension metrology, Semiconducting wafers, SRAF, Printing

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Proceedings Article | 1 April 2013 Paper

7nm node EUV predictive study of mask LER transference to wafer

D. Civay, E. Nash, U. Klostermann, T. Wallow, P. Mangat, H. Koh, P. Brooker, J. Siebert, H. Levinson

Proceedings Volume 8679, 86792Q (2013) https://doi.org/10.1117/12.2011197

KEYWORDS: Line edge roughness, Photomasks, Stochastic processes, Semiconducting wafers, Critical dimension metrology, Calibration, Lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography

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Proceedings Article | 23 March 2012 Paper

Calibration and verification of a stochastic model for EUV resist

Weimin Gao, Alexander Philippou, Ulrich Klostermann, Joachim Siebert, Vicky Philipsen, Eric Hendrickx, Tom Vandeweyer, Gian Lorusso

Proceedings Volume 8322, 83221D (2012) https://doi.org/10.1117/12.917804

KEYWORDS: Line width roughness, Calibration, Data modeling, Stochastic processes, Extreme ultraviolet, Semiconducting wafers, Photomasks, Cadmium, Scanning electron microscopy, Photons

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Proceedings Article | 16 March 2009 Paper

Analysis of topography effects on lithographic performance in double patterning applications

J. Siebert, P. Brooker, T. Schmoeller, T. Klimpel

Proceedings Volume 7274, 72740M (2009) https://doi.org/10.1117/12.814193

KEYWORDS: Photomasks, Semiconducting wafers, Double patterning technology, Lithography, Tin, Etching, Reflectivity, Line edge roughness, Computer simulations, Photoresist processing

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Showing 5 of 6 publications

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