Dr. John N. Randall Profile

Dr. John N. Randall

CEO at Zyvex Labs LLC

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Author

Publications (20)

Proceedings Article | 10 April 2024 Presentation

Integrated atomic metrology with analog/digital lithography and spectroscopy: a future in nano a quantum fabrication

Tito Busani, Isaac Stricklin, John Randall, Ivo Rangelow

Proceedings Volume PC12956, PC129560K (2024) https://doi.org/10.1117/12.3010007

KEYWORDS: Lithography, Quantum measurement, Gallium nitride, Fabrication, Nanowires, Spectroscopy, Atomic force microscopy, Ultraviolet radiation, Silicon, Quantum systems

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Proceedings Article | 9 April 2024 Presentation + Paper

Atomically precise advanced manufacturing for 2D bipolar devices

J. H. Owen, R. Santini, M. Haq, E. Fuchs, J. Randall

Proceedings Volume 12956, 129560C (2024) https://doi.org/10.1117/12.3011900

KEYWORDS: Scanning tunneling microscopy, Optical alignment, Dopants, Automatic alignment, Silicon, Lithography, Manufacturing, Quantum processes, Nanoelectronics

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Proceedings Article | 1 May 2023 Presentation + Paper

Scalable digital atomic precision lithography

Ehud Fuchs, James Owen, Afshin Alipour, Emma Fowler, S. O. Reza Moheimani, John Randall

Proceedings Volume 12497, 124970G (2023) https://doi.org/10.1117/12.2661599

KEYWORDS: Lithography, Scanning tunneling microscopy, Electron beam lithography, Microelectromechanical systems, Actuators, Scanners, Silicon, Control systems, Quantum fields, Electrons

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Proceedings Article | 23 March 2020 Presentation + Paper

Atomically precise digital e-beam lithography

J. Randall, J. H. Owen, E. Fuchs, R. Saini, R. Santini, S. O. R. Moheimani

Proceedings Volume 11324, 113240X (2020) https://doi.org/10.1117/12.2552083

KEYWORDS: Electron beam lithography, Manufacturing, Silicon, Chemical species, Scanning tunneling microscopy, Error control coding, Information technology, Fabrication, Lithography

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Proceedings Article | 13 March 2006 Paper

The nanotech impact on IC processing: near and long term

John Randall, Richard Stallcup, Taylor Cavanah

Proceedings Volume 6156, 615610 (2006) https://doi.org/10.1117/12.659558

KEYWORDS: Silicon, Nanotechnology, Focus stacking software, Germanium, Electron beam lithography, Transistors, Manufacturing, Optical lithography, Semiconductors, Nanolithography

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Proceedings Article | 22 January 2005 Paper

Characterization of assembled MEMS

Zoran Jandric, John Randall, Rahul Saini, Michael Nolan, George Skidmore

Proceedings Volume 5716, (2005) https://doi.org/10.1117/12.596300

KEYWORDS: Connectors, Microelectromechanical systems, Finite element methods, Assembly tolerances, Scanning electron microscopy, Modal analysis, Manufacturing, Lithography, Autocollimators, 3D modeling

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Proceedings Article | 10 July 2003 Paper

OPC on real-world circuitry

Sean O'Brien, Tom Aton, Mark Mason, Carl Vickery, John Randall

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485484

KEYWORDS: Optical proximity correction, Lithography, Resolution enhancement technologies, Reticles, SRAF, Silicon, Photomasks, Transistors, Scanning electron microscopy

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Proceedings Article | 22 January 2001 Paper

Dual-mask model-based proximity correction for high-performance 0.10-um CMOS process

Shane Palmer, Mark Mason, John Randall, Tom Aton, Keeho Kim, Alexander Tritchkov, James Burdorf, Michael Rieger, John Stirniman

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410679

KEYWORDS: Optical proximity correction, Photomasks, Binary data, Data modeling, Etching, Phase shifts, Optical lithography, Databases, Critical dimension metrology, Semiconducting wafers

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Proceedings Article | 5 July 2000 Paper

Mask error factor impact on the 130-nm node

John Randall, Christopher Baum, Keeho Kim, Mark Mason

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389049

KEYWORDS: Phase shifts, Binary data, Photomasks, Optical proximity correction, Reticles, Optical lithography, Semiconducting wafers, Printing, Lithography, Cadmium

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Proceedings Article | 5 July 2000 Paper

Manufacturability of 248-nm phase-shift lithography for 100-nm transistors

Mark Mason, John Randall, Keeho Kim

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388971

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Binary data, Lithography, Phase shifts, Manufacturing, 193nm lithography, Optical lithography, Transistors

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Proceedings Article | 5 July 2000 Paper

Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100-nm gate fabrication

Keeho Kim, Mark Mason, John Randall, Won Kim

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388957

KEYWORDS: Photomasks, Lithography, Deep ultraviolet, Critical dimension metrology, Electroluminescence, Optical lithography, Semiconducting wafers, Optical proximity correction, Printing, 193nm lithography

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Proceedings Article | 26 July 1999 Paper

Variable-threshold resist models for lithography simulation

John Randall, Kurt Ronse, Thomas Marschner, Anne-Marie Goethals, Monique Ercken

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354329

KEYWORDS: Data modeling, Lithography, Photoresist processing, Semiconducting wafers, Mathematical modeling, Wafer-level optics, Reticles, Data conversion, Image processing, Cadmium sulfide

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Lithography simulation tools eliminate costly and time consuming experiments allowing new processes to be developed quickly. There are excellent simulation programs that allow sophisticated modeling of the optics in current and future lithography tools. In many instances, the weak point in lithography simulations is the relatively poor capability to model resists. Sophisticated and accurate models have been developed for many technologically important i-line resists. However the models for 248nm chemically amplified resist are not as mature, and there are many resist of interest for which there are no reliable models. Even when they do exist, these full resist models are computationally expensive and not suitable for some applications such as model based optical proximity corrections. When useful models do not exist, lithographers use the aerial imaging portions of the lithography simulation tools and apply the simplest of resist models, the so-called constant threshold model. While this allows the critical dimensions to be approximated for high contrast resist, it fails to capture important aspects of most resist processes. Empirically trained resists models have come to be used where more accurate lithography simulations are required, but full resist models either do not exist or are to slow to be useful. This paper explores the use of a class of empirically trained models known as variable threshold resist models. This type of model stats with an aerial image calculation and uses a function to locally vary the threshold used to predict CDs. This type of model may be quickly trained for a specific resist process and potentially applied for a wide range of numerical aperture and partial coherence settings. We show how multiple dose and focus data can be used to train a model that includes input parameters extracted from the aerial image as well as pattern factors and exposure dose. The data present suggests that models trained with one set of optical conditions are useful at other optical settings. We also explore different approaches to validate the models and demonstrate some consider the effect of across wafer variation on the training data.

Proceedings Article | 18 December 1998 Paper

Some challenges for mask making to keep up with the roadmap

Rik Jonckheere, John Randall, Thomas Marschner, Kurt Ronse

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332839

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Reticles, Optical proximity correction, Mask making, Lithography, Image processing, Scanning electron microscopy, Scanners

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Proceedings Article | 29 June 1998 Paper

Reduction of mask-induced CD errors by optical proximity correction

John Randall, Alexander Tritchkov, Rik Jonckheere, Patrick Jaenen, Kurt Ronse

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310737

KEYWORDS: Photomasks, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Reticles, Printing, Lithography, Imaging systems, Optical components, Nonlinear optics

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Proceedings Article | 28 July 1997 Paper

Automated OPC for application in advanced lithography

Kurt Ronse, Alexander Tritchkov, John Randall, Rik Jonckheere, Kouros Ghandehari, Luc Van den Hove

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277300

KEYWORDS: Optical proximity correction, Lithography, Photomasks, Optical lithography, Reticles, Deep ultraviolet, Printing, Mask making, Data modeling, Optics manufacturing

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Proceedings Article | 8 December 1995 Paper

Advances in stencil mask technology: control of distortion in ion-projection lithography masks

John Wolfe, Alex Shimkunas, John Melngailis, Hans Loeschner, Robert Mohondro, John Randall

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228175

KEYWORDS: Photomasks, Distortion, Silicon, Ions, Lithography, Spatial frequencies, Picosecond phenomena, Modulation, Aluminum, Projection lithography

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Proceedings Article | 13 May 1994 Paper

Ion projection: the successor to optical lithography

Hans Loeschne, Gerhard Stengl, Ivan Berry, John Randall, John Wolfe, Walter Finkelstein, Robert Hill, John Melngailis, Lloyd Harriott, Wilhelm Bruenger, L. Buchmann

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175827

KEYWORDS: Ions, Semiconducting wafers, Photomasks, Lithography, Distortion, Projection systems, Wafer-level optics, Ion beams, Optical lithography, Projection lithography

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Proceedings Article | 3 October 1993 Paper

Metrology applications of scanning probe microscopes

Leigh Ann Files-Sesler, John Randall, Francis Celii

Proceedings Volume 10310, 103100J (1993) https://doi.org/10.1117/12.183193

Proceedings Article | 1 October 1990 Paper

Advances in the processing of quantum-coupled devices

John Randall, Mark Reed, John Luscombe, Gary Frazier, William Frensley, Alan Seabaugh, Yung Kao, Tom Moore, Richard Matyi

Proceedings Volume 1284, (1990) https://doi.org/10.1117/12.20774

KEYWORDS: Quantum dots, Diodes, Gallium arsenide, Quantum wells, Semiconductors, Heterojunctions, Etching, Nanostructures, Indium gallium arsenide, Reactive ion etching

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Proceedings Article | 1 May 1990 Paper

Advances in mask fabrication and alignment for masked ion-beam lithography

David Stumbo, George Damm, D. Engler, F. Fong, S. Sen, John Wolfe, John Randall, Phillip Mauger, Alex Shimkunas, Hans Loeschne

Proceedings Volume 1263, (1990) https://doi.org/10.1117/12.20143

KEYWORDS: Photomasks, Silicon, Optical alignment, Distortion, Ion beams, Ions, X-ray technology, Printing, Luminescence, Etching

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Showing 5 of 20 publications

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