An ultra wide dynamic range (WDR) CMOS image sensor (CIS) and the details of evaluation are presented. The proposed signal readout technique of extremely short accumulation (ESA) enables the dynamic range of image sensor to be expanded up to 146dB. Including the ESA signals, total of 4 different accumulation time signals are read out in one frame period based on burst readout technique. To achieve the high-speed signal readout required for the multiple exposure signals, column parallel A/D converters are integrated at the upper and lower sides of pixel arrays. The improved 12-bits cyclic ADCs with a built-in correlated double sampling (CDS) circuit has the differential non-linearity (DNL) of ±0.3LSB.