Dr. Jong-Jin Kim Profile

Dr. Jong-Jin Kim

Director at SRI International

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Publications (5)

Proceedings Article | 6 October 2006 Paper

Amorphous silicon waveguide components for monolithic integration with InGaAsP gain sections

M. Kwakernaak, W. Chan, B. Kharas, N. Maley, H. Mohseni, L. Yang, D. Capewell, V. Frantz, T. Mood, G. Pajer, D. Ackerman, J. Abeles, A. Braun, J. Kim, D. Bang, D. Lee

Proceedings Volume 6352, 635217 (2006) https://doi.org/10.1117/12.691710

KEYWORDS: Waveguides, Amorphous silicon, Refractive index, Plasma enhanced chemical vapor deposition, Single mode fibers, Photonic integrated circuits, Planar waveguides, Waveguide modes, Waveguide lasers, Integrated optics

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Proceedings Article | 13 September 2005 Paper

1.5 and 2.3 µm diode laser arrays for optical pumping

A. Gourevitch, G. Belenky, L. Shterengas, D. Donetsky, D. Westerfeld, B. Laikhtman, R. Martinelli, G. Kim

Proceedings Volume 5887, 588711 (2005) https://doi.org/10.1117/12.620001

KEYWORDS: Temperature metrology, Semiconductor lasers, Laser development, Pulsed laser operation, High power lasers, Continuous wave operation, Resistance, Erbium, Erbium lasers, Optical pumping

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High wall-plug efficiency and a wide range of available wavelengths make laser diode arrays preferable for many high-power applications, including optical pumping of solid state lasers. Recently, we designed and fabricated InGaAsP/InP arrays operating at 1.5-μm and In(Al)GaAsSb/GaSb arrays operating at 2.3-μm. We have demonstrated a high continuous-wave (CW) output power of 25 W from a one dimensional laser array and a quasi-CW (q-CW) output power of 110 W from a two dimensional laser array both operating near 1.5-μm. We have obtained a CW output power of 10 W from the 2.3-μm laser array. The 1.5-μm arrays are suitable for resonant pumping of erbium doped solid-state lasers, which require high power optical sources emitting in the narrow erbium absorption bands. Long current-injection pulses produce a considerable temperature increase within the diode laser structure which induces a red-shift of the output wavelength. This thermal drift of the laser array emission spectrum can lead to misalignment with the erbium absorption bands, which decreases pumping efficiency. We have developed an experimental technique to measure the time dependence of the laser emission spectrum during a single current pulse. From the red-shift of the laser emission, we determine the temperature of the laser active region as a function of time. The spacing between the individual laser emitters has an effect on the array heating. In steady state operation, this spacing is a contributing factor in the non-uniformity of the thermal field within the bar, and thus to the overall thermal resistance of the laser bar. Under pulse operation, the transient heating process can be divided into three time periods; each with its own heat transport condition. It was shown that in the initial period of time the heat propagates within the laser bar structure and the laser bar design (fill factor) strongly affects the active region temperature rise. In the later periods the temperature kinetics is insensitive to the fill factor. This analysis has been verified in experimental studies using the 1.5-μm laser arrays.

Proceedings Article | 25 March 2005 Paper

GaSb-based lasers for spectra region 2-4 µm: challenges and limitations

Gregory Belenky, Leon Shterengas, J.G. Kim, Ramon Martinelli, Sergey Suchalkin, Mikhail Kisin

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.584729

KEYWORDS: Quantum wells, Semiconductor lasers, Mid-IR, Continuous wave operation, Indium gallium arsenide antimonide, Waveguides, High power lasers, Aluminum, Gallium

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Proceedings Article | 11 May 2004 Paper

Mid-infrared "W" diode lasers and their application to methane sensing

William Bewley, Chadwick Canedy, Chulsoo Kim, Igor Vurgaftman, Mijin Kim, Jerry Meyer, Jongjin Kim, Ramon Martinelli, Roger Farmer

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.529381

KEYWORDS: Methane, Semiconductor lasers, Continuous wave operation, Diodes, Mid-IR, Gallium antimonide, Aluminum, Gallium, Antimony, Absorption

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Proceedings Article | 11 May 2004 Paper

High-power room-temperature continuous wave operation of type-I In(Al)GaAsSb/GaSb diode lasers at wavelengths greater than 2.5 µm

Jongjin Kim, Leon Shterengas, Ramon Martinelli, Gregory Belenky

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.528984

KEYWORDS: Quantum wells, Continuous wave operation, Semiconductor lasers, Temperature metrology, High power lasers, Pulsed laser operation, Gallium, Antimony, Laser damage threshold, Indium gallium arsenide antimonide

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