Mr. Jongwon Jang Profile

Jongwon Jang

at SK Hynix Inc

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 31 March 2014 Paper

Model-based pattern dummy generation for logic devices

Jongwon Jang, Cheolkyun Kim, Sungwoo Ko, Seokyoung Byun, Hyunjo Yang, Donggyu Yim

Proceedings Volume 9052, 90521W (2014) https://doi.org/10.1117/12.2046198

KEYWORDS: SRAF, Model-based design, Metals, Instrument modeling, Lithography, Logic devices, Optical proximity correction, Shape memory alloys, Logic, Semiconducting wafers

Read Abstract +

Proceedings Article | 12 April 2013 Paper

Mask 3D effects on contact layouts of 1Xnm NAND flash devices

Jongwon Jang, Hyungjeong Jeong, Hyungsoon Yune, Seyoung Oh, Hyunjo Yang, Donggyu Yim

Proceedings Volume 8683, 86831V (2013) https://doi.org/10.1117/12.2011659

KEYWORDS: SRAF, Photomasks, Optical proximity correction, Metals, Modulation, Scanning electron microscopy, Scanners, Cadmium sulfide, Semiconducting wafers, Double patterning technology

Read Abstract +

Proceedings Article | 23 March 2011 Paper

Scanner matching using pupil intensity control between scanners in 30nm DRAM device

Jongwon Jang, Daejin Park, Jeaseung Choi, Areum Jung, Gyun Yoo, Jungchan Kim, Cheol-kyun Kim, Donggyu Yim, Junwei Lu, Seunghoon Park, Zongchang Yu, Venu Vellanki, Wenkin Shao, Chris Park

Proceedings Volume 7973, 79730S (2011) https://doi.org/10.1117/12.879570

KEYWORDS: Scanners, Critical dimension metrology, Semiconducting wafers, Cadmium, Calibration, Data modeling, Computer simulations, Metrology, Control systems, Lithography

Read Abstract +

Proceedings Article | 10 March 2010 Paper

The impacts of scanner modeling parameters for OPC model of sub-40nm memory device

Cheol-Kyun Kim, Jong-won Jang, Jinhyuck Jeon, Chan-ha Park, Hyun-jo Yang, Donggyu Yim, Sungki Park

Proceedings Volume 7640, 764013 (2010) https://doi.org/10.1117/12.846710

KEYWORDS: Scanners, Critical dimension metrology, Optical proximity correction, Instrument modeling, Lithographic illumination, Shape analysis, Process modeling, Semiconducting wafers, Resolution enhancement technologies, Lithography

Read Abstract +

It is necessary to apply extreme illumination condition on real device as minimum feature size of the device shrinks. As k1 decrease, ultra extreme illumination has to be used. However, in case of using this illumination, CD and process windows dramatically fluctuate as pupil shapes slightly changes. For past several years, Pupil Fit Modeling (PFM) was developed in order to analyze pupil shape parameters which are independent from each others. The first object in this work is to distinguish pupil shape of different scanner by separating more parameters. According to pupil parameter analysis, the major factors of CD or process window difference between two scanner systems obviously appear. Due to correlation between pupil parameter and scanner knob, pupil parameter analysis would be clearly identified which scanner knob should be compensated. The second object is to define specification of each parameter by using analysis of CD budget for each pupil parameters. Using periodic monitoring of pupil parameter which is controlled by previous specification, scanner system in product lines can be maintained at ideal state. Additionally, OPC model accuracy enhancement should be obtained by using highly accurate fitted pupil model. Recently, other application of pupil model is reported for improvement of OPC and model based verification model accuracy. Such as modeling using average optics and hot spot detection of scanner specific model are easily adopted by using pupil fit model. Therefore, applications of pupil fit parameter for process model are very useful for improvement of model accuracy. In our study, the quantity of model accuracy enhancement using PFM is investigated and analyzed. OPC and hotspot point detection capability results with pupil fit model would be shown. Also, in this paper, trends of CD and process window for each scanner parameter are evaluated by using pupil fit model. As of results, we were able to find which pupil parameter has influence in critical layer CD and application of this result resulted in better accuracy in detecting hotspot for model based verification.

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years