We successfully designed and fabricated semiconductor lasers emitting at 626 nm at room-temperature to improve research and scaling of 9Be+ ion qubits. The design is based on the calculation of the energy band structure by k·p theory for strained semiconductors, the vertically guided mode, and the modal gain in dependence of carrier density as well as threshold sheet densities and wavelengths. Promising designs are grown on three-inch wafers by metal-organic vapor-phase epitaxy for experimental investigations. Broad area lasers are used for evaluation of the laser performance.
We report on processing, characterization and lifetime qualification of lateral single-mode laser diodes emitting at a wavelength of λ = 1064 nm. The lasers were designed to meet the specifications for the Bose-Einstein Condensate and Cold Atom Laboratory (BECCAL). Ridge waveguide lasers (RWL) were investigated in aging experiments in order to assess the material quality of the ridge waveguide amplifiers (RWA) used in the BECCAL modules. Both RWA and RWL
have a cavity length of L = 6 mm and a ridge width of w = 5 μm, eventually tapered to 15 μm towards the front facet, yielding an optical power of Pop = 830 mW ex facet for ≥500 mW into a single mode fiber. A four-lot lifetest with temperatures from T = 20°C to 30°C and optical powers from Pop = 1.5 W to 1.7 W was performed aimed at estimating the parameters of accelerated aging. The thermal activation energy of Ea = 0.80 eV and the power stress exponent of n = 5.45 were obtained. Due to catastrophic optical damage (COD) at the laser facets, the batch with standard facet passivation failed to meet the specified reliability R > 99% at the operational time of top = 10,000 h. Using improved passivation technique by cleaving the laser bars in ultra-high vacuum (UHV) followed by ZnSe epitaxy yields a successful suppression of facet degradation. The reliability of 1064 nm RWLs with improved passivation was estimated to be close to R = 100% demonstrating the qualification of the RWA for BECCAL.
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