Scaling of designs to the 45nm or future nodes presents challenges for KrF lithography. The purpose of this work was to
explore several aspects of ArF lithography for implant layers. A comparison of dark loss seen in a KrF resist and TARC
system to that seen in an ArF system showed significant differences. While the KrF resist yielded dark loss that varied
with CD and pitch, the ArF resist showed very little dark loss and no significant variation through the design space. ArF
resist were observed to have marginal adhesion to various substrates. Improvements in adhesion performance were
shown by pre-treating the substrate with various processes, of which an ozone clean provided the best results.
Optimization of the HMDS priming conditions also improved adhesion, and it was observed that the HMDS reaction
proceeds at different rates on different subsatrates, which is particularly important for implant layers where the resist
must adhere to both Si and SiO2. The effect of ArF resist profile with varying reflectivity swing position is shown, and
some investigation into reflectivity optimization techniques was performed. Low-index ArF TARC was shown to
reduce the CD variation over polysilicon topography, and wet developable BARC was demonstrated to provide
consistent profiles on both Si and SiO2 substrates. Finally, a comparison of ArF and KrF resists after As implant
indicates that the ArF resist showed similar shrinkage performance to the KrF resist.
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