InGaN/GaN core-shell microrods (µrods) are highly promising for a new generation of light-emitting diodes. We present a 3D confocal optical approach with a spatial resolution <500 nm for characterizing operating µrod devices. 3D photoluminescence maps reveal an inhomogeneous emission: red luminescence originates from the apex and green emission from the corners, while blue emission dominates at the sidewalls. A pronounced photocurrent is measured while exciting µrods in closed current configuration, indicating charge carrier losses out of the active region due to tunneling. This interpretation is confirmed by applying an external voltage, where losses are suppressed.
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