The pellicle prevents image errors due to contaminated particles in the EUV mask and protects the mask for a stable process. However, the lifetime of the pellicle could be shortened due to deformation and destruction caused by the collision of the particle defects in the chamber. Therefore, in order to increase the lifetime of the pellicle, it is required to develop an optimal pellicle material and structure that is resistant to deformation and destruction and has excellent mechanical stability. Accordingly, it is necessary to know the deformation caused by the particle collision and estimate the lifetime of the pellicles with different mechanical stability. In this study, we simulate the collision of particle defects for the pellicle and compare the mechanical stability depending on the single-layer pellicle materials.
For finer linewidth patterning, 0.55 numerical aperture (NA) should be used instead of the existing 0.33 NA. In 0.55 NA extreme ultraviolet lithography (EUVL), to alleviate the mask 3D effect and stochastic noise, which is stronger, it is necessary to develop an optimal phase shift mask (PSM) and multilayer mask for high NA. Mask structure is used PSM with composed of Ru-alloy/TaBO and multilayer composed of ruthenium (Ru)/silicon (Si), which is expected to be effective in mitigating mask 3D effect and improving imaging performance. The absorber reflectance was checked which is changed by variables such as pattern existence, target CD, and pitch ratio. In addition, by examining the relationship between the change in absorber reflectance and normalized image log slope (NILS), it was determined whether the mask structure for high NA was changed by the target pattern changes.
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