Dr. Junbo Feng Profile

Dr. Junbo Feng

at Chongqing United Microelectronics Ctr.

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Author

Publications (8)

Proceedings Article | 23 January 2023 Paper

Low-loss and high stability standard single mode fiber edge couplers for silicon photonics

Bowen Li, Bojin Pan, Jiyao Yu, Yu Li, Guowei Cao, Junbo Feng

Proceedings Volume 12556, 125561A (2023) https://doi.org/10.1117/12.2652019

KEYWORDS: Silicon, Waveguides, Single mode fibers, Silicon photonics, Finite-difference time-domain method, Wafer bonding, Refractive index, Solids, Silica, Reliability

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Proceedings Article | 23 January 2023 Paper

A graph-driven placement framework for Si photonic circuits

Yu Li, Jiyao Yu, Bowen Li, Guowei Cao, Junbo Feng

Proceedings Volume 12556, 125560T (2023) https://doi.org/10.1117/12.2650839

KEYWORDS: Silicon, Silicon photonics, Photonic integrated circuits, Photonic devices, Optimization (mathematics), Wavelength division multiplexing, Waveguides, Artificial intelligence, Optical components

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Proceedings Article | 23 January 2023 Paper

A general design approach for inverted tapers

Yuxin Liang, Zhizhou Lu, Zhihui Li, Zhonghua Yang, Junbo Feng, Naidi Cui

Proceedings Volume 12556, 125560P (2023) https://doi.org/10.1117/12.2647083

KEYWORDS: Waveguides, Wave propagation, Single mode fibers, Silicon photonics, Optical simulations, Magnetism, Waveguide modes, Planar waveguides, Microelectronics, Lutetium

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Proceedings Article | 23 January 2023 Paper

Fast waveguide geometry extraction using an optical measurement method

Jiyao Yu, Bowen Li, Yu Li, Guowei Cao, Junbo Feng

Proceedings Volume 12556, 125560I (2023) https://doi.org/10.1117/12.2645404

KEYWORDS: Waveguides, Optical fabrication, Wafer testing, Photonics

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Proceedings Article | 12 March 2021 Paper

Comparison of thermo-optic phase-shifters implemented on CUMEC silicon photonics platform

Shengping Liu, Ye Tian, Youxi Lu, Junbo Feng

Proceedings Volume 11763, 1176374 (2021) https://doi.org/10.1117/12.2587413

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Proceedings Article | 12 March 2021 Paper

High performance waveguide-integrated germanium photodetectors

ZhiXiong Xiao, JunBo Feng, ZhiPeng Hu

Proceedings Volume 11763, 1176342 (2021) https://doi.org/10.1117/12.2586890

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Proceedings Article | 2 December 2020 Paper

Efficiency enhancement of GaN based light-emitting diodes with an n-i-p type last quantum barrier

Heng Zhao, Jun Wang, Junbo Feng, Wei Yang

Proceedings Volume 11717, 117170P (2020) https://doi.org/10.1117/12.2585237

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This paper proposes a GaN-based light-emitting diode based on an n-i-p terminal quantum barrier structure that is easy to implement in epitaxy, which can enhance electron confinement and improve hole injection efficiency. Existing GaNbased light-emitting diodes, due to the electron blocking layer (EBL) formed by inserting a wide band gap AlGaN material between the active region and the p-type hole injection layer, cannot effectively confine electrons, and also suppresses multiple quantum wells (MQWs) and Hole injection in the p-type region caused by the polarization field in the EBL. In order to improve the performance of GaN-based LEDs, better suppress electron leakage in the active region and increase the hole injection efficiency in the p-type region, a new design of the terminal quantum barrier was carried out, specifically n-GaN n-GaN (1×10¹⁸cm^-3)-i-GaN-p-GaN (5×10¹⁸cm^-3) terminal quantum barrier structure, the thickness of the n, i and p layers in the barrier structure are 4 nm, 5 nm and 4 nm, respectively. This paper uses simulation method to verify the terminal quantum barrier structure. The electrical and optical performance of the GaNbased MQW LED with conventional structure and the LED based on the n-i-p terminal quantum barrier structure were compared, including physical indicators such as output optical power, threshold voltage, and hole injection concentration. The simulation results show that, compared with the traditional structure, the LED with the nip terminal quantum barrier structure has higher output light power and lower threshold voltage, and significantly increases the hole concentration in the active area, which is more effective in suppressing Electronic leaks. The analysis results show that the strong reverse electrostatic field in the nip terminal quantum barrier structure can effectively enhance the electron confinement in the active region, suppress electron leakage and improve the p-type hole injection efficiency. In summary, it is shown that the nip terminal quantum barrier structure can be Effectively improve the performance of LEDs, showing better performance than conventional devices.

Proceedings Article | 5 November 2020 Paper

A manufacture-friendly design framework for optical neural networks

Yang Zhao, Ye Tian, Shengping Liu, Wei Wang, Qiang Li, Junbo Feng, Jin Guo, Jianzhong Han

Proceedings Volume 11565, 1156514 (2020) https://doi.org/10.1117/12.2580470

KEYWORDS: Optics manufacturing, Neural networks, Photonic integrated circuits, Integrated optics, Optical design, Design for manufacturability, Modulators, Phase shifts, Machine learning

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Showing 5 of 8 publications

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