A silicon optical electro-absorption modulator (EAM) operating at a high speed and low voltage was achieved by using a Schottky diode in the C-band (1530 nm ~ 1570 nm). The optical modulation is demonstrated by the intensity change of guiding light due to the free-carrier absorption in the semiconductor to change its absorption coefficient, not conventional interference effects. The proposed EAM has lateral metal-semiconductor (MS) junctions that aid in maximizing the free carrier injection and extraction by a Schottky contact on the rib waveguide center. The rib waveguide structure of the modulator on the standard 220-nm silicon-on-insulator (SOI) platform has an etch depth of 80 nm and a width of 450 nm for the single-mode operation. The center of the rib waveguide is lightly doped with 1015 cm-3 indium, where light is mostly confined. The sides are heavily doped with 1020 cm-3 indium to contribute to the optical absorption change in the center. The depletion width in the middle region was drastically changed by a Schottky contact with bias. This design allowed a high overlap between the optical mode and carrier density variations in the center of the waveguide. To achieve a high speed operation, the travelling-wave type electrodes were designed to allow copropagation of electrical and optical signals along the waveguide. The measured results demonstrated a broad operational wavelength range of 40 nm with a uniform 3.9 dB modulation depth for a compact 25 μm modulation length with 1 Vpp driving voltage. The travelling-wave type electrodes enabled the modulator operating up to 26 GHz with 12 GHz of 3-dB electrooptic bandwidth, experimentally.
We present the basic characteristics of amplitude modulation cantilever with optical waveguide in liquid. This optical waveguide cantilever-based transducer can be used for small particle detection or biological sensing in liquid environments. Essentially, the SiON waveguide embedded in the SiO2 cantilever is designed and fabricated to detect the biomolecular interaction or small particle in the liquid. For a measurement, the actuation based on amplitude modulation is applied for a stable oscillation of the cantilever in liquid environment. Finally, modulated output signal of optical waveguide cantilever were measured and analyzed.
We propose a cost effective digitized radio-over-fiber (D-RoF) system employing a sigma delta modulation (SDM) and a bidirectional transmission technique using phase modulated downlink and intensity modulated uplink. SDM is transparent to different radio access technologies and modulation formats, and more suitable for a downlink of wireless system because a digital to analog converter (DAC) can be avoided at the base station (BS). Also, Central station and BS share the same light source by using a phase modulation for the downlink and an intensity modulation for the uplink transmission. Avoiding DACs and light sources have advantages in terms of cost reduction, power consumption, and compatibility with conventional wireless network structure.
We have designed a cost effective bidirectional D-RoF system using a low pass SDM and measured the downlink and uplink transmission performance in terms of error vector magnitude, signal spectra, and constellations, which are based on the 10MHz LTE 64-QAM standard.
An front facet anti-reflection coated solitary laser diode is operated in the external cavity diode laser (ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 280 mA, a output power of 35mW with a slope efficiency of 0.22 W/A and the bandwidth of 80 pm at a wavelength of 457 nm. In this paper, the tunable external cavity diode laser module is designed with an overall size of 18 mm x 24 mm x 14 mm. ECDL showed excellent wavelength locking behavior without a non-shift of the peak wavelength.
A combined scheme using the light source of a reflective semiconductor optical amplifier (RSOA) and an optical signal processing unit (OSPU) based on the compact TO-can package is fabricated and characterized for a fiber Bragg grating (FBG) sensing system. Due to the optical feedback behavior from the FBG sensor, the RSOA is self-injection locked and lasing occurs at the Bragg wavelength. Using the wavelength-dependent filter method, all of the components in the OSPU are compactly integrated on the TO-can package with a height of 17.6 mm and diameter of 6.0 mm. The wavelength demodulating output signals are based on the optical power difference, depending only on the wavelengths without the effect of input optical power variations. The sensitivity of the output signal to temperature shows 0.026 dB/°C. The entire FBG sensing system has an excellent linear response to temperatures controlled with an accuracy of ±0.3°C.
An front facet-low reflection coated broad-area laser(BAL) diode with an emitter size of 50 μm x 1 μm and a chip length
of 2000 μm is operated in the external cavity diode laser(ECDL). For wavelength stabilization and narrow spectral width,
the diffraction grating is used in a Littrow configuration. At an injection current of 1.5 A, a output power of 0.65 W with
a slop efficiency of 0.85 A/W, which is comparable to those of a solitary BAL diode, could be achieved with a spectral
width of 120pm which is about 77 % narrower as compared to a solitary BAL diode. The peak wavelength stability
below 10 pm was obtained in the wide range of output power up to 0.65 W.
We propose the fluorescent nanoparticle manipulations at nano-metal structures with floating AC-DEP force for plasmonic applications. The electrode gap was optimized to induce enough DEP force around the nano-structure for manipulation of the nanoparticles. 10um wide gap of electrode was acquired to apply the floating AC-DEP force at various designed metal nano-structure such as nanowire, y-branch and vortex. The all shape of nano-metal structures are formed at the gap of microelectrode and not connected with microelectrode. The gold nano-structures in the gap of microelectrode were fabricated with e-beam lithography and lift-off process. Before the formation of metal nanostructure, micro electrodes for applying the electric field around the metal nano-structures were fabricated with photolithography and lift-off process. Cadmium selenide (CdSe/ZnS) QDs (0.8 nM, emission wavelength of 605 nm) with a 25 nm zinc sulfide capping layer and 100nm polystyrene nano bead (1 nM, emission wavelength of 610nm) were used as fluorescent nanoparticles. We applied the 8 Vpp, 3 MHz sine wave for the positive DEP force, and it resulted in 108 V/m electric field and 1011 V/m electric field gradient around gold nanowire with floating AC. The fluorescent nanoparticle’s attachment at the nanowire is confirmed by the fluorescent optical analysis. The fluorescent nanoparticles are located successfully at designed metal nano-structures for plasmonic applications.
A silicon optical modulator operating at high speed and low voltage is proposed by using a Schottky diode. The optical modulation is achieved by the intensity change of guiding light due to free-carrier absorption, not conventional interference effects. The rib waveguide structure of the modulator has a height of 340 nm, a etch depth of 150 nm, a width of 4.8 μm, and a modulation length of 500 μm. It was designed to maximize the free carrier injection by a Schottky contact on the rib waveguide center. The center of the rib waveguide is lightly doped with phosphorus of 1016 cm−3, and the sides are heavily doped with phosphorus of 1020 cm−3 to improve modulation depth by injecting free carriers into the center of the rib waveguide. This design allowed a high overlap between the optical mode and carrier density variations in the center of the waveguide. To achieve high speed operation, travelling-wave type electrodes were designed to allow co-propagation of electrical and optical signals along the waveguide. The device simulated results demonstrate a 3.3 dB modulation depth for a 500 μm modulation length with 3 Vpp driving voltages. We demonstrated a Schottky modulator operating Si EAM at 3 Vpp with a 3 dB bandwidth of 7 GHz.
We propose a fabrication process using dielectrophoretic (DEP) force for plasmonic devices as a light source. The 100nm wide Au nanowires fabricated by e-beam lithography and lift-off were used to trap 25nm diameter cadmium selenide (CdSe) QDs on its end-facet with DEP force. DEP force was induced around the nanowire using 8 Vpp, 3MHz sine wave. An Electric field of 108 V/m order and electric field gradient of 1015 V/m2 order intensity were calculated with COMSOL multiphysics simulation tool. And the values are enough to induce DEP force for QD trapping. Before the QD manipulations, polystyrene bead was used which is more rigid and influenced by DEP force than QD. Concentration of 10-5% order and approximately 120sec reaction time are considered with polystyrene bead and QD manipulations are accomplished with the conditions. Finally, the QDs were manipulated to the nanowires array and ‘QD on nanowire’ nanostructure was formed as a practical plasmonic device using DEP force.
Nowadays, applications of surface plasmon (SP) were highlighted for facilitating the all integrated optical circuit in nano
space. We introduce the design and fabrication of a periodic array of gold nanostructure for detection of light which is
propagated in a SiON waveguide. The gold nanostructures are designed using Finite Element Method (FEM) and
fabricated by electron beam lithography and lift-off processes. The array is composed of 5 nano rods. The nanorod has
50 nm height, 100 nm width and 15 um length. The enhancement of light at nano array was detected. Below the specific
distance between nano array and waveguide, the nano array can detect the evanescent tail of light. The results
demonstrate nanorods array can verify the fact that the incident light propagates in a waveguide or not when optical
components are densely integrated.
We investigated the effects of SiNx interlayers on the structural and electrical properties of nonpolar a-plane (11-20) GaN grown on r-plane (1-102) sapphire substrates by metal–organic chemical vapor deposition (MOCVD). The Nomarski optical microscope images showed that the deposition conditions of the SiNx layer could strongly affect the a-plane GaN surface morphology due to the different SiNx coverage. Basal-plane stacking faults (BSFs) and threading dislocation (TD) densities were reduced in the a-plane GaN samples with high SiNx coverage and multiple SiNx-treated GaN interlayers. These results indicate that TD reduction is associated with an increase in the 3D growth step and with the blocking of TD propagation. From on-axis (11-20) X-ray rocking curve (XRC) measurements, the anisotropy of full width at half maximum (FWHM) can be attributed to the crystal mosaicity due to insertion of different SiNx interlayers. The anisotropy of sheet resistance between the c-and m-axis was also clearly seen in a-plane GaN samples with a high density of defects, which was attributed to the BSFs as scattering centers.
We investigated the structural and optical characteristics of nonpolar a-plane (11-20) GaN structure grown on TiO2 nanoparticles (NP)-coated r-plane sapphire by spin coating method. The surface morphology without any observable
inverse pyramidal pits was observed by atomic force microscopy (AFM) measurement. Transmission electron
microscopy (TEM) analysis revealed that the threading dislocations (TDs) and basal plane stacking faults (BSFs)
densities were around 4.5 × 109 cm-2 and 3.1 × 105 cm-1, respectively. It was also found that the broadening of x-ray
rocking curves (XRC) full width at a half maximum (FWHM) in Si-doped a-plane GaN on the TiO2 NP-coated r-plane
sapphire was affected by the tilt and twist of mosaic crystals. The photoluminescence (PL) intensity of TiO2 NP-related
MQWs sample at 295 K was approximately 18 % higher than that of the reference sample. This implied that the improved PL intensity was attributed to scattering of light by TiO2 NP and InGaN/GaN MQWs interface of high quality.
Au nanowires of 100 nm, 200nm and 400 nm widths with micro scale Au electrode were fabricated as electrodes to
apply high electric field gradient for strong DEP force within the nanometer range. Au nanowires were fabricated on a
silicon dioxide (SiO2) using lift-off process after e-beam lithography and e-beam evaporation. E-beam resister (ER) was
patterned and a 50 nm thick Au layer. Photo resister (PR) was patterned to make Au microelectrode and did lift-off
process. The Au nanowires with microelectrode were covered with SiO2 layer deposited with PECVD resulting in 1 um
thick. Opened end of gold nanowires, the target surface for QD immobilization, were formed using etching processes.
Single QD immobilization on the nanowire end-facet was accomplished through positive DEP force. Sine wave of 8
Vpp intensity and 3 MHz frequency was applied and it induced electric field of 108 V/m intensity and electric field
gradient around Au nanowire to make strong positive DEP. Optical analysis confirmed the attachment of single QD on
the nanowire. A single 25 nm diameter QD was manipulated on 100 nm, 200 nm and 400 nm width nanowires when 8
Vpp, 3 MHz sine wave was applied.
New conceptual display structure is introduced by using TIR characteristics and BPLC as alight shutter. In our structure,
non-polarized light source can be used as incident light due to the isotropic characteristics of BPLC unlike previously
suggested waveguide display concept using nematic LC at '0' bias voltage. In addition, light leakage in the case of
BPLC is smaller than that in the case of nematic LC. According to the wave mode, TM mode or TE mode, the critical
angle is different from each other due to homeotropical characteristics of BPLC at bias voltage. Then, each critical angle
is measured and optoelectronic characteristics of BPLC are estimated with increasing applied voltage. In addition, the
intensity characteristics according to bias voltage across BPLC are studied with various waves. We confirm the nonpolarized
light source can be automatically filtered, and directly used for waveguide display by BPLC. Consequently,
BPLC can be nominated as a new light shutter in waveguide display structure using TIR mechanism.
We introduce a fabrication process to immobilize cadmium selenide (CdSe) Quantum Dots (QDs) on end-facets
of metal nanowires, which can be possibly used as a cavity-free unidirectional single photon source with
high coupling efficiency due to high Purcell factor. Nanowires were fabricated using E-beam lithography, E-beam
evaporation, and lift-off process and finally covered with chemically deposited silicon dioxide (SiO2)
layer. End-facets of metal nanowires were defined using wet etching process. QD immobilization was
accomplished through surface modifications on both metal and QD surfaces. We immobilized thiol (-SH)
functionalized 15 base pair (bp) ssDNA on Au nanowire surface to hybridize with its complimentary amine (-
NH3) functionalized 15bp ssDNA and conjugated the amine functionalized 15bp ssDNA with QD. Presenting
QD immobilization method showed high selectivity between metal nanowire and SiO2 surfaces.
We have tuned the lasing wavelength of a quantum dot laser diode (QDLD) by a thermal treatment. The InGaAs QDLD
structure for 980 nm wavelength applications was grown by molecular beam epitaxy using the Stranski-Krastanov
growth mode. The room temperature photoluminescence (PL) of a QDLD showed the ground state (GS) and excited
state (ES) at the wavelengths at 993 and 946 nm, respectively. The 100 μm-wide and 4 mm-long broad area QDLD
showed the lasing wavelength of 963 nm attributed to the ES of QDs with higher gain. After the thermal treatment at
800 °C for 3 minutes with 300 nm-thick SiO2 capping layers, the PL intensity of the GS increased, which caused the
enhanced GS gain. The enhanced GS gain is thought to the attribution to the decreased carrier trapping due to the
defects quenching. As a result, we could control the lasing wavelength of the QDLD from a wavelength of 963 nm to a
wavelength of 980 nm. Moreover, the performances of these QDLDs have been discussed. This post-growth technique
can be used to enhance the performances of the optoelectronic devices based on quantum dot.
We demonstrated the room temperature lasing of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) grown by atomic layer epitaxy (ALE). The active region of a QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In0.15Ga0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10 ~ 50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 95 A/cm2 under a pulsed operation and 247 A/cm2 under a CW operation, respectively. The lasing wavelength was 1.31 μm under a pulsed operation condition and 1.32 μm under a CW operation at room temperature. The QDLD showed a simultaneous lasing and a state switching to the higher-order state. The lasing wavelength switching from the ground state to the excited state depends on the cavity length, the injection current and operating temperature.
We have investigated the characteristics of GaAs-based 1.3 μm quantum-dot laser diode (QDLD) with Al0.7Ga0.3As cladding layers. The active region of QDLD consists of 3-stacked InAs quantum-dots (QDs) in an In0.15Ga0.85As quantum well (dots-in-a-well: DWELL), which was grown by molecular beam epitaxy (MBE). For advanced performances of QDLD, the high-growth-temperature spacer layer and p-type modulation doping were applied to QDLD active region. We fabricated ridge waveguide structure LDs which had 10 ~ 50 μm ridge width with several cavity lengths and applied a high reflection (HR) coating on one-sided mirror facet. The threshold current density was 155 and 95 A/cm2 for a 2000 μm-long as-cleaved and a 1500 μm-long HR coated LDs, respectively. The lasing wavelength was 1.31 μm from the ground state transition, under a pulsed operation condition (0.1%) at room temperature. The QDLD showed simultaneous lasing at 1.31 μm and 1.23 μm from the ground state (GS) and the excited state (ES), respectively. The lasing wavelength switching from the GS to the ES depends on the cavity length, the injection current and operating temperature.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.