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Jung-Hye Chae
Technical Staff Member at SAMSUNG Electro-Mechanics
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Author
Publications (5)
Proceedings Article | 12 February 2010 Paper
Phosphor concentration and geometry for high power white light emitting diode
Proceedings Volume 7617, 76171Y (2010) https://doi.org/10.1117/12.851535
KEYWORDS: Light emitting diodes, Silicon, Particles, Luminous efficiency, Absorption, LED lighting, Reflectors, Reflectivity, Packaging, Refractive index
Proceedings Article | 6 October 2006 Paper
Waveguide structural effect on ripples of far-field pattern in 405-nm GaN-based laser diodes
Proceedings Volume 6352, 63521J (2006) https://doi.org/10.1117/12.691215
KEYWORDS: Waveguides, Semiconductor lasers, Gallium, Refractive index, Gallium nitride, Aluminum, Near field optics, Cladding, Active optics, Waveguide modes
Proceedings Article | 6 October 2006 Paper
Recent progress of high-power InGaN blue-violet laser diodes
H. Ryu, K. Ha, S. Lee, K. Choi, T. Jang, J. Son, H. Kim, J. Chae, H. Paek, Y. Sung, T. Sakong, K. Kim, O. Nam, Y. Park
Proceedings Volume 6352, 63521I (2006) https://doi.org/10.1117/12.691128
KEYWORDS: Quantum wells, Indium gallium nitride, Aluminum, Temperature metrology, Gallium nitride, Semiconductor lasers, Superlattices, Near field optics, Continuous wave operation
Proceedings Article | 3 March 2006 Paper
Increase of output power and lifetime by improving the heat dissipation of GaN-based laser diodes
Jung-Hye Chae, Han-Youl Ryu, Kyu-Sang Kim, Kyoung-Ho Ha, Suhee Chae, Hyungkun Kim, Sung-Nam Lee, Kwang-Ki Choi, Taehoon Jang, Joong-Kon Son, Ho-Sun Baek, Youn-Joon Sung, Sakong Tan, Younhee Kim, Ok-Hyun Nam, Yong-Jo Park
Proceedings Volume 6121, 61210Y (2006) https://doi.org/10.1117/12.647332
KEYWORDS: Semiconductor lasers, Sapphire, Temperature metrology, Light sources, Indium gallium nitride, Waveguide lasers, Waveguides, Metalorganic chemical vapor deposition, Gallium nitride, Aluminum nitride
Proceedings Article | 1 April 2005 Paper
Measurement of junction temperature in GaN-based laser diodes using voltage-temperature characteristics
Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.590240
KEYWORDS: Temperature metrology, Gallium nitride, Sapphire, Semiconductor lasers, Continuous wave operation, Indium gallium nitride, Optical testing, Superlattices, Pulsed laser operation
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