The human motion energy harvesting is under investigation. The aim of this investigation: to develop electromagnetic
human motion energy harvester that will consist only from flat elements and is integrable into the apparel. Main parts of
the developed human motion energy harvester are flat, spiral-shaped inductors. Voltage pulses in such flat inductors can
be induced during the motion of a permanent magnet along it. Due to the flat structure, inductors can be completely
integrated into the parts of the clothes and it is not necessary to keep empty place for the movement of the magnet, as in
usual electromagnetic harvesters. The prototype of the clothing, jacket with integrated electromagnetic human motion
energy harvester with flat inductors is tested. The theoretical model for the induction of the electromotive force due to
the magnet’s movement is created for the basic shapes (round, rhombic, square) of the inductive elements and the results
(shape of voltage pulse and generated energy) of the calculations are in a good qualitative and quantitative coincidence
with an experimental research.
In this work the kinetics of heterogeneous precipitation of silicon oxide in silicon is investigated. Laser induced centers act as nuclei for precipitates. Laser induced centers were formed in a near surface layer during pulsed laser annealing by double frequency of a Nd+3:YAG laser without introduction of any additional impurities. It is shown, that the process of formation and growth of precipitates in the presence of laser induced centers differs from the case of homogeneous. The dependence of the concentration of oxidation stacking faults on thermal treatment duration is given. The thickness of the layer with inhomogeneous distribution of oxidation stacking faults grows with thermal treatment duration in an inert ambient. This growth can be explained by the drift of oxygen atoms in the direction of the gradient of tensile internal stresses, which increases in silicon during the growth of silicon oxide precipitates.
The generation of unstable at room temperature centers in boron-doped Si during laser annealing are under investigation. It is shown, that the generation of two kinds of unstable centers with different recombination time constants during the laser annealing takes place. Through an investigation of dependence of the recombination time constants on temperature the activation energies of these donors are determined: EF equals 0.8 - 0.9 eV and E2 equals 1.4 - 1.5 eV. It is detected, that recombination time constants of centers depend on boron and oxygen atoms concentrations in laser-annealed region -- recombination time constants of both kinds of centers decrease with increase of both boron and oxygen concentrations in silicon. It is shown, that the generation of these unstable donors does not occur during the laser annealing of boron-doped silicon with basic frequency of Q-switched Nd:YAG-laser (wavelength 1.06 micrometer). The model of generation mechanism of the donors is proposed taking into account dependence of recrystallization velocity during pulsed laser annealing on absorption coefficient of radiation and a great difference in absorption coefficients of basic (k1 equals 15 cm-1) and double (k2 equals 104 cm-1) frequencies of Nd:YAG-laser radiation.
The method of the recording and storage of the information in boron-doped silicon using YAG:Nd laser is proposed. The laser-induced centers, which are generated during the laser annealing of silicon can be used for the recording of information. The dependence of a concentration and a time-stability of generated centers on parameters of the laser radiation and impurities content in the silicon are investigated experimentally. The model of the generation of additional centers in the laser-annealed area is proposed.