Photonic integration is one of the important ways to realize low cost and small form factor optical transceivers for future high-speed high capacity I/O applications in computing systems. The photonic integration on silicon platform is particularly attractive because of the CMOS photonics and electronics process compatibility. In this paper, we present design and fabrication of a silicon photonic integrated circuit that is capable of transmitting data at hundreds gigabits per second. In such an integrated chip, 8 high-speed silicon optical modulators with a 1:8 wavelength demultiplexer and an 8:1 wavelength multiplexer are fabricated on a single silicon-on-insulator (SOI) substrate. We review the recent results of individual silicon modulator based on electric-field-induced carrier depletion in a SOI waveguide containing a reverse biased pn junction. We characterize the individual multiplexer/demultiplexer as well as the integrated chip. The basic functionality of the photonic integration is demonstrated.
High-speed silicon optical modulator is one of key components for integrated silicon photonic chip aiming at Tb/s data
transmission for next generation communication networks as well as future high performance computing applications. In
this paper we review the recent development of the silicon modulator. In particular, we present a high-speed and highly
scalable silicon optical modulator based on the free carrier plasma dispersion effect. The fast refractive index modulation
of the device is due to electric-field-induced carrier depletion in a Silicon-on-Insulator waveguide containing a reverse
biased pn junction. To achieve high-speed performance, a traveling-wave design is employed to allow co-propagation of
electrical and optical signals along the waveguide. We demonstrate high-frequency modulator optical response with 3
dB bandwidth of ~20 GHz and data transmission up to 30 Gb/s. We also highlight the future device optimization for 40
Gb/s and beyond.