In this paper, we have demonstrated a low-reflectance organic light-emitting device (OLED) by inserting a perylene
diimide derivative between the emitting layer (EML) and the cathode. Such a material exhibits a good electron transport
capability and good photoconductivity which absorbs light. A semi-transparent layer composed of thin aluminum (Al)
and silver (Ag) was used between the EML and the n-type organic material, a perylene diimide derivative, for better
electron injection and efficient destructive interference. The J-V characteristics of our low reflection and the control one
are nearly identical which shows the superior conductivity of this material. In addition, the absorption peak of this ntype
organic material is near 550 nm which can eliminate most of the ambient visible light. And the potocurrent is
generated from self-absorption by this material. Thus, this device can also be applied as a photodetector or the
applications of the self-adjustable display under different ambient illumination with suitable driving scheme.
In this paper, we have demonstrated the current increase with repeated measurements of Id-Vds curves with different Vg values which results from the non-uniform carrier accumulation in the channel region of a pentacene-based thin film transistor (TFT). The mobility of our device reaches 0.07 cm2/Vs even the substrate was not heated during pentacene deposition. Besides, the devices show good air-stable properties. The magnitude of Id decreased less than 30% after exposure in air for 2 weeks. By repeating the Id-Vds measurements from 0 to -50 V with the Vg values of 0, -10, -20, -30, -40, and -50 V for 10 minutes, we observed a four times current increase from -0.75 to -2.8 μA at Vg = -50V and Vds = -50V. The current increase comes from the holes accumulation near the drain. When the source and drain were exchanged, the current decreases to the 0.08 μA. After another 10 minutes operation, the current will recover back to the original values. Such a process is reversible and shows the potential of the memory device base on this pentacene transistor.