Dr. Keith R. Mountfield Profile

Dr. Keith R. Mountfield

Research Staff Engineer

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Author

Publications (8)

Proceedings Article | 9 September 2004 Paper

Spin stand characterization of dielectric optical waveguides fabricated on AlTiC sliders for heat-assisted magnetic recording

Tim Rausch, Christophe Mihalcea, Kelman Pelhos, Chubing Peng, Edward Gage, Keith Mountfield, Michael Seigler, William Challener

Proceedings Volume 5380, (2004) https://doi.org/10.1117/12.556004

KEYWORDS: Waveguides, Head, Magnetism, Dielectrics, Polarization, Near field, Transducers, Sensors, Near field optics, Anisotropy

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Proceedings Article | 9 September 2004 Paper

Fabrication of dielectric optical waveguides on AlTiC sliders for heat-assisted magnetic recording

Christophe Mihalcea, Kelman Pelhos, Tim Rausch, Chubing Peng, W.A. Challener, Edward Gage, Keith Mountfield, Michael Seigler

Proceedings Volume 5380, (2004) https://doi.org/10.1117/12.556006

KEYWORDS: Waveguides, Magnetism, Tantalum, Head, Cladding, Plasma enhanced chemical vapor deposition, Dielectrics, Semiconducting wafers, Silicon, Near field optics

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Proceedings Article | 14 May 2004 Paper

E-beam proximity effect parameters for sub-100nm features

Keith Mountfield, Andrew Eckert, XiaoMin Yang, Earl Johns

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535766

KEYWORDS: Neck, Magnetism, Scattering, Semiconducting wafers, Head, Electrons, Tantalum, Computer aided design, Compact discs, Glasses

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Proceedings Article | 16 June 2003 Paper

Three-dimensional imaging of isolated lines of negative e-beam resist

Andrew Eckert, Harold Gentile, Keith Mountfield, Carl Seiler, XiaoMin Yang, Earl Johns

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482323

KEYWORDS: 3D metrology, Critical dimension metrology, Neck, 3D image processing, Stereoscopy, Semiconducting wafers, Metrology, Electron beam lithography, Scanning electron microscopy, Lithography

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We have implemented traditional CD-SEM metrology complimented with the 3D imaging capability of the VERASEM 3D CD-SEM from Applied Materials. 3D imaging is performed by tilting the SEM beam to capture images at two unique angles. Reconstruction of these images allows for the determination of resist thickness and sidewall angle at the same point the critical dimension, CD, is measured. These three output parameters provide the user with automated multi-metric lithographic process control. We have used these techniques to characterize e-beam lithography of isolated lines in ~0.6μm of negative resist at CDs between ~50 and ~100 nm. The flexibility of our e-beam lithography system allows us to expose an array of identical features with 30 distinct dose values over a small area of a wafer. We have characterized the resist CD and thickness as a function of small incremental decreases in dose. As the dose decreases so does the CD of the isolated resist line at a rate of ~1 nm per 1μC/cm² of area exposure. At a nominally high dose where the isolated line CD is ~100 nm the resist is measured by 3D imaging to be close to full thickness. The main observation is that the resist thickness erodes at a rate of ~5 nm in height per every 1nm decrease in CD down to the resolution limit of 50-60 nm. As the dose is further lowered the resist is then completely washed away. This subtle but significant loss in resist etch mask integrity could not have been observed by traditional top-down CD-SEM metrology alone. This also demonstrates the tilt capability of the VERASEM 3D to measure very thin resist films of ~100 nm. Additionally, we have successfully used this methodology to characterize this effect as a function of isolated line length from ~0.5-2.0μm, and resist thickness from ~0.25-0.6 μm. The CD is strongly correlated with the total isolated line length due to the e-beam proximity effect, while the resist erosion rate remains fairly constant. The resist erosion rate is also similar for the resist films regardless of initial thickness. However, we also confirm the trend that identical area doses produce larger CDs for thicker resist films with some subtle effects for the thinner films.

Proceedings Article | 16 June 2003 Paper

Electron-beam lithography method for sub-50-nm isolated trench with high aspect ratio

XiaoMin Yang, Andrew Eckert, Keith Mountfield, Harold Gentile, Carl Seiler, Stanko Brankovic, Robert Harris, Earl Johns

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482343

KEYWORDS: Photoresist processing, Scanning electron microscopy, Magnetism, Plating, Real-time computing, Semiconducting wafers, Electron beam lithography, Thin films, Lithography, Atomic force microscopy

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Proceedings Article | 1 July 2002 Paper

Electron-beam lithography of isolated trenches with chemically amplified positive resist

Andrew Eckert, Richard Bojko, Harold Gentile, Robert Harris, Jay Jayashankar, Earl Johns, Kevin Minor, Keith Mountfield, Carl Seiler, XiaoMin Yang

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472361

KEYWORDS: Semiconducting wafers, Plating, Critical dimension metrology, Lithography, Electron beam lithography, Scanning electron microscopy, Computer aided design, Thin film coatings, Scattering, Chemically amplified resists

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Proceedings Article | 29 June 1994 Paper

Measured characteristics of the reflected magneto-optic spatial light modulator (R-MOSLM TM) device

William Ross, James Karins, Theodore Maki, John Lucas, Louis Kelly, Niels Jacksen, Jaekyong Cho, David Lambeth, Tan Le, Keith Mountfield, Suresh Santhanam, Daniel Stancil, Mark Randles, Jonathan Whitlock, Dennis Garrity

Proceedings Volume 2240, (1994) https://doi.org/10.1117/12.179134

KEYWORDS: Reflectivity, Optical correlators, Magneto-optics, Crystals, Garnet, Metals, Semiconducting wafers, Molybdenum, Adaptive optics, Laser crystals

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Proceedings Article | 25 October 1993 Paper

Reflected magneto-optic spatial light modulator advanced development for miniature ruggedized optical correlators

William Ross, James Karins, Theodore Maki, John Lucas, Louis Kelly, Jaekyong Cho, David Lambeth, Tan Le, Keith Mountfield, Suresh Santhanam, Daniel Stancil, Mark Randles, Jonathan Whitlock, Dennis Garrity

Proceedings Volume 1959, (1993) https://doi.org/10.1117/12.160291

KEYWORDS: Optical correlators, Reflectivity, Optical pattern recognition, Crystals, Magneto-optics, Garnet, Metals, Semiconducting wafers, Spatial light modulators, Crystal optics

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Showing 5 of 8 publications

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