Mr. Ken Ozawa Profile

Ken Ozawa

Principal Engineer at Samsung R&D Institute Japan

SPIE Involvement:

Author

Proceedings Article | 11 May 2007 Paper

Alternating phase-shift mask and binary mask for 45-nm node and beyond: the impact on the mask error control

Yosuke Kojima, Masanori Shirasaki, Kazuaki Chiba, Tsuyoshi Tanaka, Yukio Inazuki, Hiroki Yoshikawa, Satoshi Okazaki, Kazuya Iwase, Kiichi Ishikawa, Ken Ozawa

Proceedings Volume 6607, 66070C (2007) https://doi.org/10.1117/12.728925

KEYWORDS: Photomasks, Chromium, Semiconducting wafers, Printing, Etching, Binary data, Resolution enhancement technologies, Reflectivity, Scanning electron microscopy, Image enhancement

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Proceedings Article | 20 October 2006 Paper

A new criterion of mask birefringence for polarized illumination

Kazuya Iwase, Boontarika Thunnakart, Tokihisa Kaneguchi, Ken Ozawa, Toshifumi Yokoyama, Yasutaka Morikawa, Fumikatsu Uesawa

Proceedings Volume 6349, 634951 (2006) https://doi.org/10.1117/12.685360

KEYWORDS: Birefringence, Photomasks, Polarization, Cadmium sulfide, Tolerancing, Electroluminescence, Lithography, Critical dimension metrology, Lawrencium, Wave plates

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Proceedings Article | 20 May 2006 Paper

Mask specifications for 45-nm node: the impact of immersion lithography and polarized light imaging

Kazuya Iwase, Ken Ozawa, Fumikatsu Uesawa

Proceedings Volume 6283, 628337 (2006) https://doi.org/10.1117/12.681826

KEYWORDS: Photomasks, Tolerancing, Polarization, Immersion lithography, Electroluminescence, Lithography, Error analysis, Lithographic illumination, Birefringence, Fiber optic illuminators

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Proceedings Article | 29 March 2006 Paper

Optimization of dual BARC structures for hyper-NA immersion lithography

Nobuyuki Matsuzawa, Boontarika Thunnakart, Ken Ozawa, Yuko Yamaguchi, Hiroyuki Nakano, Hiroichi Kawahira

Proceedings Volume 6153, 61531J (2006) https://doi.org/10.1117/12.651563

KEYWORDS: Silicon, Reflectivity, Oxides, Refractive index, Immersion lithography, Photoresist materials, Lithography, Optimization (mathematics), Polarization, Semiconductors

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Proceedings Article | 15 March 2006 Paper

Effect of azimuthally polarized illumination imaging on device patterns beyond 45nm node

Ken Ozawa, Boontarika Thunnakart, Tokihisa Kaneguchi, Isao Mita, Atsushi Someya, Toshiharu Nakashima, Hisashi Nishinaga, Yasushi Mizuno, Tomoyuki Matsuyama, Masato Hamatani

Proceedings Volume 6154, 61540C (2006) https://doi.org/10.1117/12.656242

KEYWORDS: Lithographic illumination, Lithography, Line edge roughness, SRAF, Polarization, Photomasks, Imaging devices, Optical proximity correction, Manufacturing, Logic

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Proceedings Article | 10 March 2006 Paper

Dry-etch proximity function for model-based OPC beyond 65-nm node

Shunichiro Sato, Ken Ozawa, Fumikatsu Uesawa

Proceedings Volume 6155, 615504 (2006) https://doi.org/10.1117/12.657043

KEYWORDS: Etching, Optical proximity correction, Model-based design, Silica, Silicon, Data analysis, Data modeling, Edge detection, Instrument modeling, Process modeling

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Proceedings Article | 5 November 2005 Paper

A novel strategy of lithography-error-budget optimization for the 65-nm node: mask specifications for hyper-NA imaging

Kazuya Iwase, Kiichi Ishikawa, Koichi Takeuchi, Ken Ozawa, Fumikatsu Uesawa

Proceedings Volume 5992, 59920Y (2005) https://doi.org/10.1117/12.632021

KEYWORDS: Photomasks, Tolerancing, Immersion lithography, Error analysis, Lithography, Electroluminescence, Lithographic illumination, Critical dimension metrology, Scanners, Refractive index

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Proceedings Article | 28 June 2005 Paper

A novel robust optimization method of exposure and mask conditions for beyond 65 nm-node lithography

Koichi Takeuchi, Kazuya Iwase, Ken Ozawa, Fumikatsu Uesawa

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617455

KEYWORDS: Chromium, Photomasks, Lithography, Distortion, Critical dimension metrology, Optical proximity correction, Phase shifts, Error analysis, Cadmium, Polarization

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Proceedings Article | 12 May 2005 Paper

Novel robust optimization method of lithographic conditions for correlative multilayers beyond 65 nm node

Koichi Takeuchi, Ken Ozawa, Fumikatsu Uesawa, Hiroichi Kawahira

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600175

KEYWORDS: Lithography, Metals, Photomasks, SRAF, Optical proximity correction, Signal to noise ratio, Error analysis, Critical dimension metrology, Integrated circuits, Semiconducting wafers

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Proceedings Article | 20 August 2004 Paper

Advanced mask pattern correction method of alternating PSM: improvement of line width uniformity in the shifter length direction

Masamichi Yoshida, Ken Ozawa, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557800

KEYWORDS: Optical proximity correction, Distortion, Image segmentation, Model-based design, Critical dimension metrology, Phase shifts, Photomasks, Semiconducting wafers, Resolution enhancement technologies, Wafer-level optics

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Proceedings Article | 28 May 2004 Paper

Integrated OPC approach to line-end shortening effects on the photomask and silicon levels for ArF attenuated PSM lithography

Shunichiro Sato, Ken Ozawa, Mikio Katsumata, Hidetoshi Ohnuma

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.533987

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Lithography, Cadmium, Silicon, Critical dimension metrology, Wafer-level optics, Optical calibration, Diffractive optical elements

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Proceedings Article | 26 June 2003 Paper

Impact of inter-mask CD error on OPC accuracy in resolution of 90 nm and below

Ken Ozawa, Shunichiro Sato, Hidetoshi Ohnuma

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485380

KEYWORDS: Photomasks, Optical proximity correction, Cadmium, Semiconducting wafers, Critical dimension metrology, Scanners, Calibration, Lithography, Phase shifts, Diffusion

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Proceedings Article | 1 August 2002 Paper

Defect printability of ArF alternative phase-shift mask: a critical comparison of simulation and experiment

Ken Ozawa, Tooru Komizo, Hidetoshi Ohnuma

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476977

KEYWORDS: Photomasks, Phase shifts, Critical dimension metrology, Quartz, Semiconducting wafers, Dry etching, Phase measurement, Photoresist processing, Wet etching, Optical lithography

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Proceedings Article | 30 July 2002 Paper

Defect printability of alternating phase-shift mask: a critical comparison of simulation and experiment

Ken Ozawa, Tooru Komizo, Koji Kikuchi, Hidetoshi Ohnuma, Hiroichi Kawahira

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474479

KEYWORDS: Photomasks, Optical lithography, Chromium, Quartz, Critical dimension metrology, Fiber reinforced polymers, Phase shifts

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Showing 5 of 14 publications

Conference Committee Involvement (2)

Optical Microlithography XXII

24 February 2009 | San Jose, California, United States

Optical Microlithography XXI

26 February 2008 | San Jose, California, United States

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