Dr. Kenjiro Uesugi Profile

Dr. Kenjiro Uesugi

at Mie Univ

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Author

Publications (4)

Proceedings Article | 9 March 2024 Presentation

Fabrication of deep UV LEDs with a high-quality AlGaN on face-to-face annealed sputter-deposited AlN template

Hideto Miyake, Kenjiro Uesugi, Takao Nakamura

Proceedings Volume PC12886, PC128860G (2024) https://doi.org/10.1117/12.3005277

KEYWORDS: Light emitting diodes, Quantum annealing, Aluminum gallium nitride, Fabrication, External quantum efficiency, Deep ultraviolet, Sapphire, Emission wavelengths, Crystals

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Proceedings Article | 8 March 2024 Presentation + Paper

Crack-free growth of UVC LEDs on 6-inch sapphire substrates using face-to-face high-temperature annealed AlN by production scale MOCVD

J. Yoshinaga, K. Ikejiri, S. Koseki, K. Uesugi, H. Miyake

Proceedings Volume 12886, 128860B (2024) https://doi.org/10.1117/12.2692614

KEYWORDS: Light emitting diodes, Metalorganic chemical vapor deposition, Annealing, Aluminum gallium nitride

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Proceedings Article | 5 March 2021 Presentation

Fabrication of high crystalline AlN/sapphire for deep UV-LED

Hideto Miyake, Kenjiro Uesugi, Shiyu Xiao, Kanako Shojiki, Shigeyuki Kuboya

Proceedings Volume 11686, 116860Z (2021) https://doi.org/10.1117/12.2585271

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Proceedings Article | 5 March 2021 Presentation

Development of DUV-LED grown on high-temperature annealed AlN template

Kenjiro Uesugi, Ding Wang, Kanako Shojiki, Shigeyuki Kuboya, Hideto Miyake

Proceedings Volume 11686, 116860U (2021) https://doi.org/10.1117/12.2576492

KEYWORDS: Aluminum nitride, Crystals, Vapor phase epitaxy, Sapphire, Reliability, Quantum wells, Quantum efficiency, Light emitting diodes, External quantum efficiency, Deep ultraviolet

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