Mr. Kent G. Green Profile

Kent G. Green

Mask Synthesis Services Product Manager

SPIE Involvement:

Author

Area of Expertise:

Photomask , OPC , Photolithography

Websites:

Company Website

Publications (11)

Proceedings Article | 4 April 2011 Paper

Extending analog design scaling to sub-wavelength lithography: co-optimization of RET and photomasks

Ashesh Parikh, Siew Dorris, Tom Smelko, Walter Walbrick, Pushpa Mahalingam, John Arch, Kent Green, Vishal Garg, Peter Buck, Craig West

Proceedings Volume 7974, 79740N (2011) https://doi.org/10.1117/12.877487

KEYWORDS: Photomasks, Reticles, Deep ultraviolet, Analog electronics, Silicon, Optical proximity correction, Critical dimension metrology, Lithography, Resolution enhancement technologies, CMOS technology

Read Abstract +

Proceedings Article | 28 May 2004 Paper

Conversion from 50 KeV to DUV mask writer for 90-nm technology critical layers

Dongsung Hong, Prakash Krishnan, Dianna Coburn, Mary Zawadzki, Yonghong Yang, Kent Green, Peter Buck, Curt Jackson, Larry Martinez

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535882

KEYWORDS: Photomasks, Deep ultraviolet, Semiconducting wafers, Optical proximity correction, Lithography, Electron beam lithography, Error control coding, Metals, Laser systems engineering, Binary data

Read Abstract +

One of Cypress’ primary goals for 90-nm generation mask strategy is to control mask costs while not compromising on performance. One key objective is to replace the use of 50-ke V electron beam pattern generation with DUV laser mask lithography where possible. The higher productivity of the DUV laser systems compared to the 50Ke V e-beam platforms offers a unique opportunity for mask cost reduction. Compared to previous i-line generations of laser lithography systems, the DUV laser systems provide significantly improved resolution and pattern fidelity that more closely approaches that of ebeam lithography. We have previously published experimental results demonstrating that the difference in fidelity on the mask between the laser and EB platforms does not always translate to a measurable difference in wafer litho performance or even more importantly to a measurable difference in electrical performance. Through this work, Cypress was able to eliminate the use of 50Ke V ebeam writers for all of their 130nm technology node layers. In some cases the improved performance of the DUV tools was sufficient to replace i-line produced masks where wafer performance was marginal without having to resort to EB lithography. This study addresses the conversion of 50Ke V ebeam layers to DUV laser platform specifically for the critical layers of the Cypress’ 90nm Technology node. EB lithography was originally specified for these layers as a conservative approach in part due to the timing of 90-nm technology development relative to the maturation of the DUV laser mask lithography process. In this study, the electrical performance and wafer yield are evaluated for equivalency in order to take advantage of the lower cost and faster cycletime that use of a ALTA DUV system provides over the 50Ke V VSB systems. In addition, the wafer OPC is not changed between the two mask writing systems in order to allow interchangeable use of the two writing systems if the experimental results indicated no difference in wafer performance.

Proceedings Article | 17 December 2003 Paper

Manufacturing of ArF chromeless hard shifter for 65-nm technology

Keun-Taek Park, Laurent Dieu, Greg Hughes, Kent Green, Ebo Croffie, Kunal Taravade

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518252

KEYWORDS: Optical design, Photomasks, Quartz, Etching, Semiconducting wafers, Printing, Critical dimension metrology, Manufacturing, Line edge roughness, Tolerancing

Read Abstract +

Proceedings Article | 17 December 2003 Paper

DUV mask writer for BEOL 90-nm technology layers

Dongsung Hong, Prakash Krishnan, Dianna Coburn, Nazneen Jeewakhan, Shengqi Xie, Joshua Broussard, Bradley Ferguson, Kent Green, Peter Buck, Curt Jackson, Larry Martinez

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518051

KEYWORDS: Photomasks, Deep ultraviolet, Semiconducting wafers, Metals, Vestigial sideband modulation, Reticles, Optical proximity correction, Back end of line, Critical dimension metrology, Cadmium

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Advanced write tool effects on 100-nm node OPC

Peter Buck, Kent Green, Kent Ibsen, Kent Nakagawa, Dongsung Hong, Prakash Krishnan, Dianna Coburn

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467761

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Lithography, Deep ultraviolet, Image processing, Electron beam lithography, Printing, Scanning electron microscopy, Manufacturing

Read Abstract +

Proceedings Article | 11 March 2002 Paper

Model-based OPC methodology for 0.13 micron technology

Vishnu Kamat, Kent Green, Sejal Chheda, Sven Muehle, Venkat Kolagunta, Bill Wilkinson, Cecilia Philbin

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458355

KEYWORDS: Optical proximity correction, Reticles, Data modeling, Semiconducting wafers, Manufacturing, Lithography, Databases, Model-based design, Instrument modeling, Optics manufacturing

Read Abstract +

Proceedings Article | 26 July 1999 Paper

Practicing extension of 248-nm DUV optical lithography using trim-mask PSM

Michael Kling, Nigel Cave, Bradley Falch, Chong-Cheng Fu, Kent Green, Kevin Lucas, Bernard Roman, Alfred Reich, John Sturtevant, Ruiqi Tian, Drew Russell, Linard Karklin, Yao-Ting Wang

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354297

KEYWORDS: Photomasks, Binary data, Reticles, Deep ultraviolet, Optical proximity correction, Optical lithography, Optics manufacturing, Manufacturing, Etching, Phase shifts

Read Abstract +

Proceedings Article | 26 July 1999 Paper

Characterization of CD control for sub-0.18-um lithographic patterning

John Sturtevant, John Allgair, Chong-Cheng Fu, Kent Green, Robert Hershey, Michael Kling, Lloyd Litt, Kevin Lucas, Bernard Roman, Gary Seligman, Mike Schippers

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354335

KEYWORDS: Critical dimension metrology, Error analysis, Optical lithography, Semiconducting wafers, Reticles, Metrology, Deep ultraviolet, Lithography, Reflectivity, Resistance

Read Abstract +

Proceedings Article | 8 June 1998 Paper

Implementation of a closed-loop CD and overlay controller for sub-0.25-um patterning

John Sturtevant, Michele Weilemann, Kent Green, John Dwyer, Eric Robertson, Robert Hershey

Proceedings Volume 3332, (1998) https://doi.org/10.1117/12.308788

KEYWORDS: Critical dimension metrology, Overlay metrology, Lithography, Control systems, Deep ultraviolet, Manufacturing, Etching, Optical lithography, Semiconducting wafers, Scanners

Read Abstract +

Proceedings Article | 7 July 1997 Paper

Full-field CD control for sub-0.20-um patterning

John Sturtevant, John Allgair, Mark Barrick, Chong-Cheng Fu, Kent Green, Robert Hershey, Lloyd Litt, John Maltabes, Carla Nelson-Thomas, Bernard Roman, John Singelyn

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276024

KEYWORDS: Critical dimension metrology, Deep ultraviolet, Optical lithography, Lithography, Resistance, Manufacturing, Logic

Read Abstract +

Proceedings Article | 8 August 1993 Paper

0.35-micron excimer DUV photolithography process

Donald Arugu, Kent Green, Peter Nunan, Marcel Terbeek, Sue Crank, Lam Ta, Elliott Capsuto, Satyendra Sethi

Proceedings Volume 1927, (1993) https://doi.org/10.1117/12.150433

KEYWORDS: Deep ultraviolet, Optical lithography, Transistors, Semiconducting wafers, Metals, Resistance, Excimers, Excimer lasers, Lithography, Manufacturing

Read Abstract +

Showing 5 of 11 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years