Mr. Kevin R. Lensing Profile

Kevin R. Lensing

Member of Technical Staff at Advanced Micro Devices Inc

SPIE Involvement:

Author

Publications (8)

Proceedings Article | 22 March 2008 Paper

Scatterometry as technology enabler for embedded SiGe process

Alok Vaid, Rohit Pal, Matthew Sendelbach, Shahin Zangooie, Kevin Lensing, Carsten Hartig

Proceedings Volume 6922, 69220U (2008) https://doi.org/10.1117/12.774564

KEYWORDS: Scatterometry, Metrology, Semiconducting wafers, Transmission electron microscopy, Scatter measurement, Etching, Diffractive optical elements, Silicon, Process control, Germanium

Read Abstract +

Proceedings Article | 22 March 2008 Paper

Extracting dose and focus from critical dimension data: optimizing the inverse solution

Kevin Lensing, J. Broc Stirton, Siddharth Chauhan

Proceedings Volume 6922, 692209 (2008) https://doi.org/10.1117/12.775441

KEYWORDS: Data modeling, Lithography, Numerical analysis, Semiconducting wafers, Metrology, Testing and analysis, Critical dimension metrology, Finite element methods, Process control, Reticles

Read Abstract +

Proceedings Article | 4 April 2007 Paper

Lithography process control using scatterometry metrology and semi-physical modeling

Kevin Lensing, Jason Cain, Amogh Prabhu, Alok Vaid, Robert Chong, Richard Good, Bruno LaFontaine, Oleg Kritsun

Proceedings Volume 6518, 651804 (2007) https://doi.org/10.1117/12.711548

KEYWORDS: Data modeling, Scatterometry, Critical dimension metrology, Lithography, Finite element methods, Reticles, Semiconducting wafers, Metrology, Process control, Systems modeling

Read Abstract +

Proceedings Article | 4 April 2007 Paper

Evaluating a scatterometry-based focus monitor technique for hyper-NA lithography

Chandra Saru Saravanan, Srinivasan Nirmalgandhi, Oleg Kritsun, Alden Acheta, Richard Sandberg, Bruno La Fontaine, Harry Levinson, Kevin Lensing, Mircea Dusa, Jan Hauschild, Anita Pici

Proceedings Volume 6518, 651806 (2007) https://doi.org/10.1117/12.712470

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Scanners, Scatterometry, Finite element methods, Monochromatic aberrations, Reticles, Cadmium, Fused deposition modeling, Mathematical modeling

Read Abstract +

Proceedings Article | 26 March 2007 Paper

Evaluating the performance of a 193-nm hyper-NA immersion scanner using scatterometry

Oleg Kritsun, Bruno La Fontaine, Richard Sandberg, Alden Acheta, Harry Levinson, Kevin Lensing, Mircea Dusa, Jan Hauschild, Anita Pici, Chandra Saravanan, Kunie Primak, Rahul Korlahalli, Srinivasan Nirmalgandhi

Proceedings Volume 6520, 65200L (2007) https://doi.org/10.1117/12.715971

KEYWORDS: Semiconducting wafers, Scanners, Scatterometry, Critical dimension metrology, Metrology, Lithography, Modulation transfer functions, Cadmium, Spatial frequencies, Immersion lithography

Read Abstract +

Proceedings Article | 10 May 2005 Paper

A comprehensive comparison of spectral scatterometry hardware

Kevin Lensing, Broc Stirton, Brian Starnes, Joseph Synoradzki, Bryan Swain, Lawrence Lane

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.600783

KEYWORDS: Critical dimension metrology, Scatterometry, Reflectance spectroscopy, Reflectometry, Metrology, Spectroscopy, Reflectivity, Logic, Data modeling, Lithography

Read Abstract +

Proceedings Article | 24 May 2004 Paper

Scatterometry feasibility studies for 0.13-micron flash memory lithography applications: enabling integrated metrology

Kevin Lensing, Clint Miller, Geoff Chudleigh, Bryan Swain, Michael Laughery, Anita Viswanathan

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.533813

KEYWORDS: Metrology, Critical dimension metrology, Semiconducting wafers, Lithography, Scatterometry, Metals, Process control, Reflectometry, Aluminum, Scanning electron microscopy

Read Abstract +

Proceedings Article | 2 June 2003 Paper

Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control and several different CMOS features

Benjamin Bunday, Michael Bishop, John Swyers, Kevin Lensing

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.485016

KEYWORDS: Semiconducting wafers, Etching, Calibration, Critical dimension metrology, Deep ultraviolet, Process control, Scanning electron microscopy, Lithography, Photoresist processing, Reticles

Read Abstract +

One goal of CD metrology is to monitor lithographic process control and how it relates to post-etch results. At present, in-fab process control for this purpose is achieved through top-down CD measurements. To acquire profile information requires destructive cross-section SEM measurements or time-consuming AFM measurements. To find height and profile information about a resist or etched structure directly on a CD-SEM, techniques using the combination of in-column beam tilt and stereographic imaging have been developed, implemented and improved on the Applied Materials NanoSEM-3D. This work is an extension of results previously published, although the tool used is greatly improved and the target feature stacks more thorough. The column of the NanoSEM-3D is designed to be able to electronically tilt the incident beam at small angles as it approaches the sample, through bending the beam within the column. Two images can be captured of the sidewall of the feature target, one at a smaller tilt angle and one at a larger tilt angle. Through matching common features between these two images, a reconstructed profile can be mathematically generated. A feature height and sidewall angle can be calculated, and general shape information such as top-rounding, footing and undercutting can also be displayed. To benchmark the effectiveness of this new technique, an experiment has been conducted to quantify the repeatability and reproducibility of height and sidewall angle measurements of lines of resist-on-poly and the resulting etched-poly lines, and correlate these to measurements of the these same profiles using XSEM to determine the accuracy of the technique. This study will span a reasonable lithographic process window. We hope to demonstrate the necessary precision and accuracy capability to non-destructively replace some cross-section work. In applying these techniques to a common etch bias problem, we also hope to demonstrate a strong correlation which can be used to directly predict post-etch behavior and serve as a model for other etch processes, work with which XSEM cross-sections have typically been used until now. The profile measurement technique is also applied to other CMOS features such as etched STI trench, resist and etched contact holes, and resist and etched damascene trenches and vias, with calculated tool precisions for feature height and sidewall angle.

Showing 5 of 8 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years