Ms. Kirstin Schauble Profile

Kirstin Schauble

at Stanford Univ

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Proceedings Article | 5 March 2021 Presentation + Paper

Aluminum oxide as a dielectric and passivation layer for (flexible) metal-oxide and 2D semiconductor devices

Alwin Daus, Connor McClellan, Kirstin Schauble, Julio Costa, Ryan Grady, Luisa Petti, Giuseppe Cantarella, Niko Münzenrieder, Eric Pop

Proceedings Volume 11687, 116871I (2021) https://doi.org/10.1117/12.2587997

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We discuss the role of aluminum oxide (i.e. Al₂O₃ when stoichiometric) for transistors and sensors based on oxide semiconductors such as InGaZnO (IGZO) and two-dimensional (2D) semiconductors, such as monolayer MoS₂. Aluminum oxide is a well-known capping and dielectric layer in semiconductor technology typically deposited by atomic-layer deposition (ALD), which offers a dense and high-quality film with low gas permeability even when deposited on flexible substrates. However, when deposited at low temperature (< 200°C), aluminum oxide can include a significant amount of fixed charges and defects, which lead to unusual charge trapping and doping effects in semiconductor devices. For example, such charge trapping can cause (apparent) sub-60 mV/decade subthreshold swing at room temperature in IGZO transistors, but can also lead to potential applications in neuromorphic computing. We also discuss effective doping (~10¹³ cm^-2) of 2D semiconductors by thin ALD-grown non-stoichiometric AlO_x capping layers. This is achieved with an aluminum seed layer, which enables uniform growth of the subsequently deposited ALD film. This approach leads to a negative shift in threshold voltage, record on-state current (~700 μA/μm) in a monolayer semiconductor, and drastic reduction in contact resistance. Finally, we investigate the passivation effects of Al₂O₃ capping, which limits the interaction of the underlying semiconductors with ambient air and moisture. We demonstrate improved response in MoS₂ temperature sensors and long-term stability in flexible MoS₂ transistors (8 months). Further, we evaluate the effects of Al₂O₃ passivation on IGZO transistors after aging for 80 months.

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