Nanoimprint lithography (NIL) is one of the highest potential candidates for next generation lithography (NGL) in semiconductors. NIL is very useful technology for fine pattern fabrications compared to conventional optical lithography. NIL technology makes use of replication from quartz templates. The cross-sectional profile of the template is directly transferred to the resist profile on a wafer. In relationship to that, the management of cross-sectional profile in quartz templates is needed much more than that of photomask.
In our past reports, we had studied the performance of measuring cross-sectional profiles using grazing-incidence small-angle X-ray scattering (GISAXS). GISAXS has made it possible to analyze the periodic nanostructure patterns using 2D scattering X-ray intensity distribution. After much research we had found the application to not only sub-20nm hp lines-and-spaces(LS) patterns but also hole patterns was very effective.
We have been developing templates for more scaling, “sub-15nm” by applying Self-Aligned Double Patterning (SADP). We showed the specific issues in SADP and the solution for quality assuranc In this report, we demonstrate the capabilities of measuring the cross-sectional profiles for sub-15 nm patterns using GISAXS. Taking into complicated periodic structures of SADP, we optimize the structural models to meet the demands. This report reveals GISAXS technique has potential for the sub-15nm metrology.
Nanoimprint lithography (NIL) is one of the highest potential candidates for next generation lithography (NGL) in semiconductors[1][2]. NIL is very useful technology for pattern fabrication in high resolutions and low costs compared to conventional optical lithography[3]. NIL technology makes use of replication from quartz templates. The cross-sectional profile of the template is directly transferred to the resist profile on a wafer. In relationship to that, the management of the cross-sectional profile on the template pattern is much more important than that of photomask[4]. In our past reports, we had studied the performance of measuring cross-sectional profiles using grazing-incidence small-angle X-ray scattering (GISAXS). GISAXS has made it possible to analyze the repeated nanostructure patterns with a 2D X-ray scattering pattern. After much research, we have found the application is very effective using the method of cross-sectional profiling in sub-20 nm half-pitch lines-and-spaces (LS) patterns[5] and additionally in hole patterns[6]. However, regarding the measurement for hole patterns, around a few hours are needed to get one result. We have considered new method for measuring cross-sectional profiles of hole patterns with GISAXS to improve the measurement throughput. We propose the new method to combine GISAXS with SEM images for measuring crosssectional profiles of hole patterns. Using this new method, measurement throughput is achieved less than one hour while almost the same accuracy as the conventional method. We report the results of the cross-sectional profile measurement of hole patterns with new method in comparison to conventional method.
Nanoimprint lithography (NIL) is one of the highest potential candidates for next generation lithography in
semiconductors. NIL is very useful technology for pattern fabrication in high resolution compared to conventional
optical lithography. NIL technology makes use of replication from quartz templates. The cross-sectional profile of the
template is directly transferred to the resist profile on a wafer. Accordingly, the management of the cross-sectional
profile on the template pattern is much more important than on each photomask.
In our previous report, we had studied the performance of measuring cross-sectional profiles using grazing-incidence
small-angle X-ray scattering (GISAXS). GISAXS has made it possible to analyze the repeated nanostructure patterns
with a 2D X-ray scattering pattern. After various researches, we found the application is very effective in the method of
cross-sectional profiling of sub-20 nm half-pitch lines-and-spaces (LS) patterns.
In this report, we investigated the capabilities of measuring cross-sectional profiles for hole patterns using GISAXS.
Since the pattern density of hole patterns is much lower than that of LS patterns, the intensity of X-ray scattering in hole
measurements is much lower. We optimized some measurement conditions to build the hole measurement system.
Finally, the results suggested that 3D profile measurement of hole pattern using GISAXS has sufficient performance to
manage the cross-sectional profile of template. The measurement system using GISAXS for measuring 3D profiles
establishes the cross-sectional profile management essential for the production of high quality quartz hole templates.
Nanoimprint lithography (NIL) is one of the most potential candidates for the next generation lithography for semiconductor. It will achieve the lithography with high resolution and low cost.
High resolution of NIL will be determined by a high definition template. Nanoimprint lithography will faithfully transfer the pattern of NIL template to the wafer. Cross-sectional profile of the template pattern will greatly affect the resist profile on the wafer. Therefore, the management of the cross-sectional profile is essential.
Grazing incidence small angle x-ray scattering (GI-SAXS) technique has been proposed as one of the method for measuring cross-sectional profile of periodic nanostructure pattern. Incident x-rays are irradiated to the sample surface with very low glancing angle. It is close to the critical angle of the total reflection of the x-ray. The scattered x-rays from the surface structure are detected on a two-dimensional detector. The observed intensity is discrete in the horizontal (2θ) direction. It is due to the periodicity of the structure, and diffraction is observed only when the diffraction condition is satisfied. In the vertical (β) direction, the diffraction intensity pattern shows interference fringes reflected to height and shape of the structure. Features of the measurement using x-ray are that the optical constant for the materials are well known, and it is possible to calculate a specific diffraction intensity pattern based on a certain model of the cross-sectional profile. The surface structure is estimated by to collate the calculated diffraction intensity pattern that sequentially while changing the model parameters with the measured diffraction intensity pattern. Furthermore, GI-SAXS technique can be measured an object in a non-destructive. It suggests the potential to be an effective tool for product quality assurance. We have developed a cross-sectional profile measurement of quartz template pattern using GI-SAXS technique. In this report, we will report the measurement capabilities of GI-SAXS technique as a cross-sectional profile measurement tool of NIL quartz template pattern.
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