Two measurement methods are presented to determine precisely and reliable the electrical and electromechanical
response of piezoelectric thin film structures. A double beam laser interferometer (DBLI) was used to measure
large signal polarization, displacement, dielectric constant and the effective longitudinal piezoelectric coefficient
d33,f in out of plane direction of the film. Secondly, a unique and newly developed measurement setup based on a
4-point bending sample holder for cantilever devices was used to determine the transverse effective piezoelectric
coefficient e31,f. This setup allows the application of precisely defined and homogeneous in plain mechanical
strains to the piezoelectric film. The homogeneous stress and strain distributions were proved by Finite Element
Simulations. Additional measurements have been performed to investigate the influence of in plane mechanical
preloads on the transverse coefficient. Measurements are shown on Pb(Zr53,Ti47)O3 (PZT) thin film samples
deposited by a sol-gel based chemical solution deposition process which was optimized to maximize the e31,f
coefficient. Exceptional high e31,f coefficients demonstrate the quality of the processed films.
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