Mr. Kohei Sekiguchi Profile

Kohei Sekiguchi

Project Manager at IMEC

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Author

Publications (8)

SPIE Journal Paper | 1 October 2010

Resist roughness evaluation and frequency analysis: metrological challenges and potential solutions for extreme ultraviolet lithography

Alessandro Vaglio-Pret, Roel Gronheid, Toru Ishimoto, Kohei Sekiguchi

JM3, Vol. 9, Issue 04, 041308, (October 2010) https://doi.org/10.1117/12.10.1117/1.3531982

KEYWORDS: Line width roughness, Metrology, Extreme ultraviolet lithography, Image analysis, Line edge roughness, Lithography, Critical dimension metrology, Scanning electron microscopy, Photomasks, Edge detection

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Proceedings Article | 2 April 2010 Paper

Application of model-based library approach to photoresist pattern shape measurement in advanced lithography

Naoki Yasui, Miki Isawa, Toru Ishimoto, Kohei Sekiguchi, Maki Tanaka, Mayuka Osaki, Chie Shishido, Norio Hasegawa, Shaunee Cheng

Proceedings Volume 7638, 76382O (2010) https://doi.org/10.1117/12.846504

KEYWORDS: Photoresist materials, Lithography, Critical dimension metrology, Scanning electron microscopy, Lithographic illumination, Model-based design, Process control, Mathematical modeling, Immersion lithography, Semiconducting wafers

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Proceedings Article | 24 March 2009 Paper

A practical application of multiple parameters profile characterization (MPPC) using CD-SEM on production wafers using Hyper-NA lithography

T. Ishimoto, K. Sekiguchi, N. Hasegawa, K. Watanabe, D. Laidler, S. Cheng

Proceedings Volume 7272, 72722E (2009) https://doi.org/10.1117/12.814164

KEYWORDS: Lithography, Critical dimension metrology, Semiconducting wafers, Process control, Finite element methods, Scanning electron microscopy, Printing, Photoresist processing, Temperature metrology, Immersion lithography

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Proceedings Article | 16 April 2008 Paper

Advanced CD-SEM metrology to improve total process control performance for hyper-NA lithography

Mayuka Osaki, Maki Tanaka, Chie Shishido, Toru Ishimoto, Norio Hasegawa, Kohei Sekiguchi, Kenji Watanabe, Shaunee Cheng, David Laidler, Monique Ercken, Efrain Altamirano

Proceedings Volume 6922, 69221B (2008) https://doi.org/10.1117/12.771886

KEYWORDS: Critical dimension metrology, Etching, Photoresist processing, Lithography, Scanning electron microscopy, Semiconducting wafers, Finite element methods, Signal attenuation, Process control, Metrology

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Proceedings Article | 16 April 2008 Paper

Further study on the verification of CD-SEM based monitoring for hyper NA lithography

T. Ishimoto, M. Osaki, K. Sekiguchi, N. Hasegawa, K. Watanabe, D. Laidler, S. Cheng

Proceedings Volume 6922, 69222O (2008) https://doi.org/10.1117/12.771894

KEYWORDS: Scanning electron microscopy, Critical dimension metrology, Signal detection, Lithography, Signal attenuation, Semiconducting wafers, Process control, 3D metrology, Finite element methods, Metrology

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Proceedings Article | 24 March 2008 Paper

MuGFET observation and CD measurement by using CD-SEM

Tatsuya Maeda, Maki Tanaka, Miki Isawa, Kenji Watanabe, Norio Hasegawa, Kohei Sekiguchi, Rita Rooyackers, Nadine Collaert, Tom Vandeweyer

Proceedings Volume 6922, 69222P (2008) https://doi.org/10.1117/12.771861

KEYWORDS: Etching, Semiconducting wafers, Transistors, Field effect transistors, Scanning electron microscopy, Scatterometry, 3D metrology, Edge roughness, Metrology, Process control

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Proceedings Article | 5 April 2007 Paper

Advanced process control for hyper-NA lithography based on CD-SEM measurement

T. Ishimoto, K. Sekiguchi, N. Hasegawa, T. Maeda, K. Watanabe, G. Storms, D. Laidler, S. Cheng

Proceedings Volume 6518, 65182P (2007) https://doi.org/10.1117/12.710814

KEYWORDS: Lithography, Critical dimension metrology, Process control, Precision measurement, Semiconducting wafers, Scanning electron microscopy, Electroluminescence, Metrology, Finite element methods, Resolution enhancement technologies

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With the recent introduction of immersion lithography, optical systems with numerical aperture (NA) reaching 1.0 or larger can be realized. Various Resolution Enhancement Techniques (RET) such as various phase shift mask approaches have been used to push even further the resolution limit by reducing k₁ scaling factor, including Double Patterning Technology. However, with the improved resolution by Hyper-NA and Low-k₁, lithographers face the problem of decreasing Depth of Focus and in turn reduced process latitude. Throughout the industry, Process Window has been widely used as an analytical tool to evaluate process latitude for a given design feature size; therefore, the ability to accurately and efficiently derive a Process Window within which a process can run on target and in control is fundamental to Low-k₁ lithography. Accuracy of Process Window derivation is based on the ability to accurately measure and model the physical dimension of the design feature and how it changes in response to changes in process parameters. In the case of lithography, the Process Window of a desired critical dimension target is bounded by changes in exposure energy and defocus. To be able to accurately measure the physical dimension of the design feature remains a big challenge for metrologists especially in the presence of other process noise. In this work, it is shown that the precision of PW measurement can be enhanced by using CD-ACD (Average CD) function to measure a FEM (Focus-Exposure matrix) wafer. ACD is a function, which simultaneously measures several points, thus providing higher precision measurement in comparison to the conventional single point measurement. As seen in this work, by using ACD measurements to derive the Process Window, there is a significantly improvement in the stability of the derived Process Window. Also reported is the MPPC (Multiple Parameters Profile Characterization) ^*1), a function which provides the ability to extract pattern shape information from a measured e-beam signal. This function together with the ACD function enables PW measurement with high precision, which also takes into account the actual pattern shape. PW derived from conventionally measured data was compared with PW derived from ACD and MPPC measurement and we were able to demonstrate an improvement of more than 30% in precision of PW determination.

Proceedings Article | 17 May 1994 Paper

Stepper stability improvement by a perfect self-calibration system

Shinji Kuniyoshi, Susumu Komoriya, Koohei Sekiguchi, Takeshi Katoo

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175491

KEYWORDS: Calibration, Semiconducting wafers, Optical alignment, Reticles, Sensors, Target detection, Control systems, Lithography, Distortion, Image processing

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Showing 5 of 8 publications

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