Mr. Koichi Takeuchi Profile

Koichi Takeuchi

at Sony Corp

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 5 November 2005 Paper

A novel strategy of lithography-error-budget optimization for the 65-nm node: mask specifications for hyper-NA imaging

Kazuya Iwase, Kiichi Ishikawa, Koichi Takeuchi, Ken Ozawa, Fumikatsu Uesawa

Proceedings Volume 5992, 59920Y (2005) https://doi.org/10.1117/12.632021

KEYWORDS: Photomasks, Tolerancing, Immersion lithography, Error analysis, Lithography, Electroluminescence, Lithographic illumination, Critical dimension metrology, Scanners, Refractive index

Read Abstract +

Proceedings Article | 28 June 2005 Paper

A novel robust optimization method of exposure and mask conditions for beyond 65 nm-node lithography

Koichi Takeuchi, Kazuya Iwase, Ken Ozawa, Fumikatsu Uesawa

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617455

KEYWORDS: Chromium, Photomasks, Lithography, Distortion, Critical dimension metrology, Optical proximity correction, Phase shifts, Error analysis, Cadmium, Polarization

Read Abstract +

Proceedings Article | 12 May 2005 Paper

Novel robust optimization method of lithographic conditions for correlative multilayers beyond 65 nm node

Koichi Takeuchi, Ken Ozawa, Fumikatsu Uesawa, Hiroichi Kawahira

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600175

KEYWORDS: Lithography, Metals, Photomasks, SRAF, Optical proximity correction, Signal to noise ratio, Error analysis, Critical dimension metrology, Integrated circuits, Semiconducting wafers

Read Abstract +

Proceedings Article | 28 May 2004 Paper

Lithography of choice for the 45 nm node: new medium, new wavelength, or new beam

Fumikatsu Uesawa, Mikio Katsumata, Kazuhisa Ogawa, Koichi Takeuchi, Shinji Omori, Masaki Yoshizawa, Hiroichi Kawahira

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.535104

KEYWORDS: Lithography, Photomasks, Semiconducting wafers, Charged-particle lithography, Lithographic illumination, Phase shifts, Optical lithography, Electroluminescence, Photoresist processing, Critical dimension metrology

Read Abstract +

Proceedings Article | 29 June 1998 Paper

Influence of underlayer reflection on optical proximity effects in sub-quarter-micron lithography

Atsushi Sekiguchi, Fumikatsu Uesawa, Koichi Takeuchi, Tatsuji Oda

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310764

KEYWORDS: Reflectivity, Manufacturing, Critical dimension metrology, Lithography, Reflection, Silicon, Optical proximity correction, Photomasks, Optics manufacturing, Chemically amplified resists

Read Abstract +

Showing 5 of 6 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years