In semiconductor manufacturing for the 3nm node, 2nm node and beyond generations, Extreme ultraviolet lithography (EUVL) is an essential technology, and within that, photomask technology plays an important role. Currently, photomasks for EUVL are manufactured with a multi beam mask writer (MBMW) that uses over 200,000 electron beams to achieve high efficiency and high precision. However, it is said that the chemical amplification resist for EB lithography has already reached its limit, and forming a 10nm pattern on a mask is extremely difficult. Last year, We reported mask development using Ultra High Resolution CAR resists. In this report, we present the latest mask development status using chemical amplification resists and alternative resists to achieve even higher resolution.
KEYWORDS: Nanoimprint lithography, Scanning electron microscopy, Overlay metrology, Fabrication, Lithography, Electron beam lithography, Design and modelling, 3D acquisition, Semiconductors
Nanoimprint lithography, NIL, has been developed for fine feature pattern lithography for semiconductor fabrication as new generation lithography. NIL can realize finer and higher density of 2D patterns without design restriction. Additionally, NIL has potential of transferring 3D shapes if the template has 3D shapes. In this paper, we discussed the performance of our template for dual damascene processing. EB written master template quality targeting sub 20nm half pitch and template replication process of 3D shape was presented.
Nanoimprint lithography, NIL, has been developed for semiconductor lithography technology. Recently, cost-effective process for metal interconnects is one of the main challenges to keep scaling at a certain range of cost. Since NIL has the advantage on the resolution of interconnect patterns without design restriction and potential of transferring three-dimensional shapes, dual damascene by NIL which realize the process of metal interconnects and vias with single lithography step has been proposed. In this presentation, we will discuss the performance of our template for dual damascene processing targeting sub 20nm half pitch.
Nanoimprint lithography, NIL, is an attractive lithography technique for fine feature pattern fabrication, simple process and low cost of ownership. NIL templates play an important role because templates define the resolution of NIL process. In this paper we discussed fine feature hole template fabrication and their performance such as CD uniformity and image placement along with the feature size and duty ratio. In addition, we proposed to apply LELE(Litho-Etch-Litho-Etch) method to fabricate fine feature hole templates and discussed their performances.
This conference presentation was prepared for Photomask Japan 2022: XXVIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 2022.
Nanoimprint lithography, NIL, has been developed for semiconductor lithography technology. Recently three dimensional imprint such as dual damascene pattern fabrication by NIL is proposed. For fine feature templates, double patterning process is proposed for template fabrication. For both application, two or more E-beam writing is required in the template fabrication and the overlay of second writing against first layer is important. In the presentation, we will discuss overlay of E-beam writing in NIL template fabrication.
Nanoimprint lithography, NIL, is an attractive low cost lithography technique especially for a non-volatile memory device application. The advantages of NIL are simpler exposure system with no coat/dev track, single process step without SADP/SAQP, less design rule restriction, lower cost-of-ownership, compared with other lithography technologies.
NIL working templates are made by the replication of the EB written high quality master templates. Fabrication of high resolution master templates is one of the key items, so as to realize high quality replica templates by carefully controlled replication process.
Application of multi-beam mask writer, MBMW, to the NIL master template fabrication is very attractive for the coming generation of the new memory devices. For a fine feature master template such as 1z nm node, shot counts for writing with single beam tool will increase drastically and the writing time is estimated more than days. On the other hand, because of the parallel exposure principle, MBMW can write a master in a certain time for any feature size. In addition, MBMW is suitable for high resolution low sensitivity EB resist, which is evitable for fine feature master fabrication of lines and holes.
We applied MBMW for the fabrication sub-15nm feature size templates. A full-field 1x master template was fabricated. In this presentation, we will be discussing master template fabrication process with MBMW and the performance of the template. We will also discuss the replication process with a high resolution master.
Nanoimprint lithography, NIL, is gathering much attention as one of the most promising candidates for the next generation lithography for semiconductor. The advantages of NIL are simpler exposure system with no coat/dev track, single process step without SADP/SAQP, less design rule restriction, lower cost-of-ownership, compared with other lithography technologies.
NIL working templates are made by the replication of the EB written high quality master templates. Fabrication of high resolution master templates is one of the key items. Since NIL is 1:1 pattern transfer process, master templates have to have 4 times higher resolution compared with conventional photomasks. Another key is to maintain the quality of the master templates in replication process. NIL process is applied for the template replication and this imprint process determines most of the performance of the replicated templates.
Application of multi-beam mask writer, MBMW, to the NIL master template fabrication is very attractive. For a fine feature master template such as 1z nm node, shot count for writing with single beam tool will drastically increase and the writing time is estimated more than days. On the other hand, because of the parallel exposure principle, MBMW can write a master in a certain time for any feature size. In addition, MBMW is suitable for high resolution low sensitivity EB resist, which is evitable for fine feature master fabrication.
We applied MBMW for the fabrication of full-field master of 1z nm node. In this presentation, we will be discussing master template fabrication process with MBMW and the performance of the template. We will also discuss the replication process with a high resolution master.
Nanoimprint lithography, NIL, is gathering much attention as one of the most potential candidates for the next generation lithography for semiconductor. This technology needs no pattern data modification for exposure, simpler exposure system, and single step patterning process without any coat/develop truck, and has potential of cost effective patterning rather than very complex optical lithography and/or EUV lithography.
NIL working templates are made by the replication of the EB written high quality master templates. Fabrication of high resolution master templates is one of the most important issues. Since NIL is 1:1 pattern transfer process, master templates have 4 times higher resolution compared with photomasks. Another key is to maintain the quality of the master templates in replication process. NIL process is applied for the template replication and this imprint process determines most of the performance of the replicated templates.
Expectations to the NIL are not only high resolution line and spaces but also the contact hole layer application. Conventional ArF-i lithography has a certain limit in size and pitch for contact hole fabrication. On the other hand, NIL has good pattern fidelity for contact hole fabrication at smaller sizes and pitches compared with conventional optical lithography.
Regarding the tone of the templates for contact hole, there are the possibilities of both tone, the hole template and the pillar template, depending on the processes of the wafer side. We have succeeded to fabricate both types of templates at 2xnm in size.
In this presentation, we will be discussing fabrication or our replica template for the contact hole layer application. Both tone of the template fabrication will be presented as well as the performance of the replica templates. We will also discuss the resolution improvement of the hole master templates by using various e-beam exposure technologies.
Development of nanoimprint lithography (NIL) templates is discussed. The template fabrication process and its performance are presented with consideration of the requirements of NIL for high-volume manufacturing. Defectivity, image placement, and critical dimension uniformity are the three major performance parameters of the templates, and their current status is shown.
Performances of the nanoimprint lithography templates were discussed considering the readiness toward the high volume manufacturing of nanoimprint lithography application along with the requirement for the templates and its fabrication process. The current status of the three major performances of the templates was shown.
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