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Prof. Koji Shiozaki
at Nagoya Univ
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Publications (1)
Proceedings Article | 5 March 2021 Presentation + Paper
HfSiOx-gate GaN MOS-HEMTs for RF power transistor
Tamotsu Hashizume, Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Taketomo Sato
Proceedings Volume 11686, 1168628 (2021) https://doi.org/10.1117/12.2577403
KEYWORDS: Field effect transistors, Transistors, Molybdenum, Gallium nitride, Personal digital assistants, Atomic layer deposition, Interfaces, Diodes, Dielectrics, Chemical species
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