Mr. Kunihiro Ugajin Profile

Kunihiro Ugajin

at Toshiba Corp

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Publications (7)

Proceedings Article | 1 April 2016 Paper

Improvement of sub-20nm pattern quality with dose modulation technique for NIL template production

Keisuke Yagawa, Kunihiro Ugajin, Machiko Suenaga, Shingo Kanamitsu, Takeharu Motokawa, Kazuki Hagihara, Yukiyasu Arisawa, Sachiko Kobayashi, Masato Saito, Masamitsu Ito

Proceedings Volume 9777, 97771I (2016) https://doi.org/10.1117/12.2218809

KEYWORDS: Nanoimprint lithography, Lithography, Photomasks, Backscatter, Photoresist processing, Beam shaping, Solids, Data conversion, Semiconductors

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Proceedings Article | 28 July 2014 Paper

High performance mask fabrication process for the next-generation mask production

Keisuke Yagawa, Kunihiro Ugajin, Machiko Suenaga, Yoshihito Kobayashi, Takeharu Motokawa, Kazuki Hagihara, Masato Saito, Masamitsu Itoh

Proceedings Volume 9256, 925608 (2014) https://doi.org/10.1117/12.2069651

KEYWORDS: Photomasks, Optical lithography, Mask making, Photoresist processing, Lithography, Scanning electron microscopy, Beam shaping, Vestigial sideband modulation, Error analysis, Double patterning technology

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Proceedings Article | 9 September 2013 Paper

Potential of mask production process for finer pattern fabrication

Keisuke Yagawa, Kunihiro Ugajin, Machiko Suenaga, Yoshihito Kobayashi, Takeharu Motokawa, Kazuki Hagihara, Masato Saito, Masamitsu Itoh

Proceedings Volume 8880, 88802N (2013) https://doi.org/10.1117/12.2033257

KEYWORDS: Photomasks, Vestigial sideband modulation, Extreme ultraviolet, Lithography, Nanoimprint lithography, Scanning electron microscopy, Extreme ultraviolet lithography, Image analysis, Optical design, Optical lithography

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Proceedings Article | 25 September 2010 Paper

High performance photomask technology with the advanced binary film

Koji Murano, Kosuke Takai, Kunihiro Ugajin, Machiko Suenaga, Takeharu Motokawa, Masato Saito, Tomotaka Higaki, Osamu Ikenaga, Hidehiro Watanabe

Proceedings Volume 7823, 78232W (2010) https://doi.org/10.1117/12.866015

KEYWORDS: Photomasks, Critical dimension metrology, Etching, Chromium, Lithography, Binary data, Photomask technology, Thin films, Photoresist processing, Inspection

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Proceedings Article | 11 May 2009 Paper

Reduction of resist charging effect by EB reticle writer EBM-7000

Masato Saito, Kunihiro Ugajin, Osamu Ikenaga

Proceedings Volume 7379, 73791A (2009) https://doi.org/10.1117/12.824287

KEYWORDS: Photomasks, Electron beams, Error analysis, Reticles, Error control coding, Process engineering, Roads, Double patterning technology, Overlay metrology, Electron beam lithography

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The requirement for image placement accuracy on photomask has been rising. The ITRS road map says that we need to achieve 4.3nm accuracy in 2012 for HP 36nm device with single exposure process, further more we must achieve 3.0nm accuracy if double patterning process is selected. Fig.1 shows the today's performance of image placement accuracy. Some sample photomasks which have same pattern shape are produced during 3 months, and the mask to mask overlay accuracy of them was measured. The average of them was 3.6nm. This data shows the possibility to achieve the accuracy of photomask for HP 36nm devices. The image placement accuracy of actual device pattern during same period is showed in Fig.2. The image placement accuracy of actual device pattern is worse than that showed before. We categorized these data according to the pattern density, low density pattern and the high density pattern. The density of the test pattern is categorized into very low density pattern. The results are showed in Fig.3. We can see the degrading of image place accuracy according to the pattern density. This degrading of image placement accuracy is caused by resist charging effect. In photomask production process, electron beam writer is mainly used as lithography tool. Each pattern on photomask is formed by step by step exposure of electron beam. The surface of resist film will be charged with exposed electron beam, and electric field will be generated around that charged area. So the orbit of electron beam for next exposure will be bended by the electric field which generated by previous beam shot, and image placement accuracy will degrade. To achieve the demanded image placement accuracy, we need to remove the error caused by this phenomenon. We researched in resist charging effect for correcting it, and we studied that this phenomenon have so complex feature. After that we tried to research in it on EBM-7000, newly developed electron beam writer, and we found out the reduction of the image placement error caused by the resist charging effect on EBM-7000.

Proceedings Article | 11 May 2007 Paper

1-nm of local CD accuracy for 45-nm-node photomask with low sensitivity CAR for e-beam writer

Kunihiro Ugajin, Masato Saito, Machiko Suenaga, Tomotaka Higaki, Hideaki Nishino, Hidehiro Watanabe, Osamu Ikenaga

Proceedings Volume 6607, 66070A (2007) https://doi.org/10.1117/12.728923

KEYWORDS: Line edge roughness, Photomasks, Electron beams, Reticles, Chemical analysis, Diffusion, Electronics, Scanning electron microscopy, Process engineering, Chemically amplified resists

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Proceedings Article | 20 May 2006 Paper

Higher current density operation with EB reticle writer EBM-5000

Masato Saito, Kunihiro Ugajin, Tomotaka Higaki, Hideaki Nishino, Hidehiro Watanabe

Proceedings Volume 6283, 62831L (2006) https://doi.org/10.1117/12.681747

KEYWORDS: Reticles, Statistical analysis, Optical simulations, Photomasks, Photoresist processing, Computer simulations, Process engineering, Electron beams, Standards development, Darmstadtium

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Showing 5 of 7 publications

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