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Kwang-Ru Wang
at Tsinghua Univ
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Publications (1)
Proceedings Article | 3 July 2003 Paper
Extremely high breakdown voltage in high-brightness InGaN LEDs
K. Wang, S. Huang, M. Yeh, Y. Chung, Y. Chang, C. Sun, C. Chung, Chuong Tran
Proceedings Volume 4996, (2003) https://doi.org/10.1117/12.485631
KEYWORDS: Light emitting diodes, Indium gallium nitride, Gallium nitride, Sapphire, Vapor phase epitaxy, Semiconductor lasers, Semiconducting wafers, Sun, Fabrication, Electroluminescence
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