Dr. Laurent Azarnouche Profile

Dr. Laurent Azarnouche

at Applied Materials Inc

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 23 March 2016 Paper

Interactions between plasma and block copolymers used in directed self-assembly patterning

Stephen Sirard, Laurent Azarnouche, Emir Gurer, William Durand, Michael Maher, Kazunori Mori, Gregory Blachut, Dustin Janes, Yusuke Asano, Yasunobu Someya, Diane Hymes, David Graves, Christopher Ellison, C. Grant Willson

Proceedings Volume 9782, 97820K (2016) https://doi.org/10.1117/12.2220305

KEYWORDS: Plasma, Polymers, Etching, Silicon, Optical lithography, Plasma etching, Tin, FT-IR spectroscopy, Directed self assembly, Reactive ion etching, Picosecond phenomena, Polymethylmethacrylate

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SPIE Journal Paper | 25 September 2013

Plasma treatments to improve line-width roughness during gate patterning

Laurent Azarnouche, Erwine Pargon, Kevin Menguelti, Marc Fouchier, Melisa Brihoum, Raphael Ramos, Olivier Joubert, Pascal Gouraud, Christophe Verove

JM3, Vol. 12, Issue 04, 041304, (September 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.041304

KEYWORDS: Line width roughness, Plasma, Vacuum ultraviolet, Plasma treatment, Optical lithography, Etching, Photoresist materials, Carbon, Plasma etching, Argon

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Proceedings Article | 17 March 2012 Paper

Plasma treatment to improve linewidth roughness during gate patterning

L. Azarnouche, E. Pargon, K. Menguelti, M. Fouchier, M. Brihoum, R. Ramos, O. Joubert, P. Gouraud, C. Verove

Proceedings Volume 8328, 83280H (2012) https://doi.org/10.1117/12.920314

KEYWORDS: Line width roughness, Plasma, Vacuum ultraviolet, Plasma treatment, Etching, Photoresist materials, Carbon, Optical lithography, Plasma etching, Fractal analysis

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Proceedings Article | 17 March 2012 Paper

Towards new plasma technologies for 22nm gate etch processes and beyond

O. Joubert, M. Darnon, G. Cunge, E. Pargon, D. Thibault, C. Petit-Etienne, L. Vallier, N. Posseme, P. Bodart, L. Azarnouche, R. Blanc, M. Haas, M. Brihoum, S. Banna, T. Lill

Proceedings Volume 8328, 83280D (2012) https://doi.org/10.1117/12.920312

KEYWORDS: Plasma, Etching, Silicon, Ions, Plasma etching, Semiconducting wafers, Silica, Oxides, Oxidation

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Proceedings Article | 16 April 2011 Paper

193nm resist chemical modification induced by HBr cure plasma treatment: a TD-GC/MS outgassing study

Raluca Tiron, Erwine Pargon, Laurent Azarnouche, Herve Fontaine, Sylviane Cetre, Claire Sourd

Proceedings Volume 7972, 797215 (2011) https://doi.org/10.1117/12.879390

KEYWORDS: Plasma, Plasma treatment, Chemical analysis, Vacuum ultraviolet, Polymers, Semiconducting wafers, Statistical analysis, Laser induced fluorescence, Ions, Spectroscopy

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Proceedings Article | 23 March 2009 Paper

A CD AFM study of the plasma impact on 193nm photoresist LWR: role of plasma UV and ions

E. Pargon, M. Martin, K. Menguelti, L. Azarnouche, J. Foucher, O. Joubert

Proceedings Volume 7272, 72720M (2009) https://doi.org/10.1117/12.813493

KEYWORDS: Plasma, Line width roughness, Chemistry, Photoresist materials, Plasma etching, Vacuum ultraviolet, Photoresist processing, Surface roughness, Ultraviolet radiation, Ions

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Showing 5 of 6 publications

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