Mr. Laurent Depre Profile

Laurent Depre

Application Manager at ASML France Sarl

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Author

Publications (18)

Proceedings Article | 28 April 2023 Presentation + Paper

Etch model calibration and usage in OPC flow for curvilinear layouts

Elodie Sungauer, Laurent Depre, Raphael La Greca

Proceedings Volume 12495, 124951H (2023) https://doi.org/10.1117/12.2657676

KEYWORDS: Etching, Optical proximity correction, Calibration, Contour extraction, Scanning electron microscopy, Contour modeling, Metrology, Data modeling

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Proceedings Article | 23 March 2020 Paper

Evaluating and correcting pattern variability induced by OPC within regular array layout

C. Gardin, R. La Greca, J. Pena, L. Depre, E. Sungauer

Proceedings Volume 11327, 113271C (2020) https://doi.org/10.1117/12.2551896

KEYWORDS: Optical proximity correction, Imaging systems, Databases, Visualization, Optical lithography, System on a chip, Logic, SRAF, Imaging arrays

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Proceedings Article | 28 March 2017 Paper

Advanced in-production hotspot prediction and monitoring with micro-topography

P. Fanton, T. Hasan, A. Lakcher, B. Le-Gratiet, C. Prentice, J.-G. Simiz, R. La Greca, L. Depre, S. Hunsche

Proceedings Volume 10145, 101450X (2017) https://doi.org/10.1117/12.2260024

KEYWORDS: Semiconducting wafers, Metrology, Optical lithography, Electron beam lithography, Scanners, Finite element methods, Scanning electron microscopy, Lithography, Inspection, Computational lithography

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Proceedings Article | 24 March 2016 Paper

Resist 3D model based OPC for 28nm metal process window enlargement

P. Fanton, J. C. Le Denmat, C. Gardiola, A. Pelletier, F. Foussadier, C. Gardin, J. Planchot, A. Szucs, O. Ndiaye, N. Martin, L. Depre, F. Robert

Proceedings Volume 9778, 97781U (2016) https://doi.org/10.1117/12.2218916

KEYWORDS: 3D modeling, Optical proximity correction, Metals, 3D metrology, Optical lithography, Evolutionary algorithms, Photomasks, Scanning electron microscopy, Critical dimension metrology, Image processing, Etching, Calibration, Artificial intelligence, Reliability

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Proceedings Article | 8 March 2016 Paper

Process window optimizer for pattern based defect prediction on 28nm metal layer

P. Fanton, R. La Greca, V. Jain, C. Prentice, J.-G. Simiz, S. Hunsche, B. Le-Gratiet, L. Depre

Proceedings Volume 9778, 97782O (2016) https://doi.org/10.1117/12.2220295

KEYWORDS: Semiconducting wafers, Process control, Metals, Photomasks, Data processing, Defect detection, 3D modeling, Image processing, Lithography, Computational lithography, Scanners, Finite element methods, Optical lithography, Etching, Metrology, Scanning electron microscopy

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Proceedings Article | 17 October 2014 Paper

Imaging performance and challenges of 10nm and 7nm logic nodes with 0.33 NA EUV

Eelco van Setten, Guido Schiffelers, Eleni Psara, Dorothe Oorschot, Natalia Davydova, Jo Finders, Laurent Depre, Vincent Farys

Proceedings Volume 9231, 923108 (2014) https://doi.org/10.1117/12.2065945

KEYWORDS: Logic, Optical proximity correction, Photomasks, Extreme ultraviolet, Semiconducting wafers, Optical lithography, Calibration, Extreme ultraviolet lithography, Critical dimension metrology, Image resolution

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Proceedings Article | 31 March 2014 Paper

Wafer sub-layer impact in OPC/ORC models for advanced node implant layers

Jean-Christophe Le-Denmat, Jean-Christophe Michel, Elodie Sungauer, Emek Yesilada, Frederic Robert, Song Lan, Mu Feng, Lei Wang, Laurent Depre, Sanjay Kapasi

Proceedings Volume 9052, 90520D (2014) https://doi.org/10.1117/12.2047115

KEYWORDS: Semiconducting wafers, Data modeling, Optical proximity correction, Calibration, Optical lithography, Wafer-level optics, Scanning electron microscopy, Photomasks, Modulation, Lithography

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Proceedings Article | 31 March 2014 Paper

Advanced OPC Mask-3D and Resist-3D modeling

A. Szucs, J. Planchot, V. Farys, E. Yesilada, L. Depre, S. Kapasi, C. Gourgon, M. Besacier, O. Mouraille, F. Driessen

Proceedings Volume 9052, 905208 (2014) https://doi.org/10.1117/12.2047281

KEYWORDS: 3D modeling, Calibration, Data modeling, Photomasks, Lithography, Semiconducting wafers, Scanning electron microscopy, Atomic force microscopy, Process control, Etching

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Proceedings Article | 12 April 2013 Paper

Best focus shift mitigation for extending the depth of focus

A. Szucs, J. Planchot, V. Farys, E. Yesilada, C. Alleaume, L. Depre, R. Dover, C. Gourgon, M. Besacier, A. Nachtwein, P. Rusu

Proceedings Volume 8683, 868313 (2013) https://doi.org/10.1117/12.2011114

KEYWORDS: Wavefronts, Photomasks, Calibration, Scanning electron microscopy, Semiconducting wafers, Scanners, Lithography, Metals, Optical proximity correction, Source mask optimization

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Proceedings Article | 8 November 2012 Paper

A profile-aware resist model with variable threshold

Sylvain Moulis, Vincent Farys, Jérôme Belledent, Romain Thérèse, Song Lan, Qian Zhao, Mu Feng, Laurent Depre, Russell Dover

Proceedings Volume 8522, 85220A (2012) https://doi.org/10.1117/12.966383

KEYWORDS: Scanning electron microscopy, Data modeling, Atomic force microscopy, Calibration, Data centers, 3D modeling, Lithography, Photoresist processing, Double patterning technology, Electron beam lithography

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Proceedings Article | 13 March 2012 Paper

Full field lithographical verification using scanner and mask intrafield fingerprint

J. Planchot, L. Depre, E. Yesilada, F. Robert, F. Sundermann, H. Y. Liu, L. Cai, F. Chen

Proceedings Volume 8326, 832617 (2012) https://doi.org/10.1117/12.916151

KEYWORDS: Scanners, Photomasks, Semiconducting wafers, Scanning electron microscopy, Lithography, Critical dimension metrology, Fiber optic illuminators, Metals, Optical proximity correction, Bridges

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Proceedings Article | 23 March 2011 Paper

Enabling 22-nm logic node with advanced RET solutions

V. Farys, L. Depre, J. Finders, V. Arnoux, Y. Trouiller, H. Y. Liu, E. Yesilada, N. Zeggaoui, C. Alleaume

Proceedings Volume 7973, 79730T (2011) https://doi.org/10.1117/12.870753

KEYWORDS: Lithography, Etching, Double patterning technology, Optical lithography, Critical dimension metrology, Resolution enhancement technologies, Photomasks, SRAF, Image processing, Logic

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Proceedings Article | 1 October 2010 Paper

A systematic study of source error in source mask optimization

C. Alleaume, E. Yesilada, V. Farys, L. Depre, V. Arnoux, Zhipan Li, Y. Trouiller, A. Serebriakov

Proceedings Volume 7823, 782312 (2010) https://doi.org/10.1117/12.864246

KEYWORDS: Source mask optimization, Photovoltaics, Critical dimension metrology, Lithography, Photomasks, Optical proximity correction, Optical lithography, Resolution enhancement technologies, Metals, Visualization

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Proceedings Article | 19 May 2008 Paper

Model-based mask verification on critical 45nm logic masks

F. Sundermann, F. Foussadier, T. Takigawa, J. Wiley, A. Vacca, L. Depre, G. Chen, S. Bai, J.-S. Wang, R. Howell, V. Arnoux, K. Hayano, S. Narukawa, S. Kawashima, H. Mohri, N. Hayashi, H. Miyashita, Y. Trouiller, F. Robert, F. Vautrin, G. Kerrien, J. Planchot, C. Martinelli, J. L. Di-Maria, V. Farys, B. Vandewalle, L. Perraud, J. C. Le Denmat, A. Villaret, C. Gardin, E. Yesilada, M. Saied

Proceedings Volume 7028, 70280U (2008) https://doi.org/10.1117/12.793037

KEYWORDS: Photomasks, Semiconducting wafers, Bridges, Scanning electron microscopy, Critical dimension metrology, Process modeling, Optical proximity correction, Reticles, Model-based design, Logic

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Proceedings Article | 21 March 2007 Paper

Scanner-characteristics-aware OPC modeling and correction

Jacek Tyminski, Qiaolin Zhang, Kevin Lucas, Laurent Depre, Paul VanAdrichem

Proceedings Volume 6521, 65210Z (2007) https://doi.org/10.1117/12.711624

KEYWORDS: Optical proximity correction, Scanners, Critical dimension metrology, Fiber optic illuminators, Error analysis, Performance modeling, Reticles, Coastal modeling, Model-based design, Optical lithography

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Proceedings Article | 20 October 2006 Paper

Accounting for lens aberrations in OPC model calibration

Laurent Depre, Christopher Cork, Martin Drapeau

Proceedings Volume 6349, 63494L (2006) https://doi.org/10.1117/12.686044

KEYWORDS: Calibration, Monochromatic aberrations, Scanners, Optical proximity correction, Data modeling, Reticles, Semiconducting wafers, Critical dimension metrology, Photomasks, Statistical modeling

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Proceedings Article | 15 March 2006 Paper

Calibrating OPC models using asymmetric structures

Laurent Depre, Christopher Cork, Qiliang Yan

Proceedings Volume 6154, 61541P (2006) https://doi.org/10.1117/12.659715

KEYWORDS: Calibration, Data modeling, Statistical modeling, Monochromatic aberrations, Optical proximity correction, 3D modeling, Performance modeling, Process modeling, Critical dimension metrology, Error analysis

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Proceedings Article | 5 July 2000 Paper

Across field and across wafer flare: from KrF stepper to ArF scanner

Yorick Trouiller, Emmanuelle Luce, Alexandra Barberet, L. Depre, Patrick Schiavone

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389084

KEYWORDS: Semiconducting wafers, Scanners, Photoresist processing, Light scattering, Stray light, Bottom antireflective coatings, Critical dimension metrology, Deep ultraviolet, Silicon, Microelectronics

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Showing 5 of 18 publications

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