Dr. Laurent Grenouillet Profile

Dr. Laurent Grenouillet

at Commissariat a l'Energie Atomique

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 16 April 2013 Paper

Development of KrF hybrid resist for a dual-isolation application

Sen Liu, Steven Holmes, Kuang Jung Chen, Wu-song Huang, Ranee Kwong, Greg Breyta, Bruce Doris, Kangguo Cheng, Scott Luning, Maud Vinet, Laurent Grenouillet, Qing Liu, Matt Colburn, Chung-Hsi Wu

Proceedings Volume 8682, 86820T (2013) https://doi.org/10.1117/12.2011515

KEYWORDS: Photomasks, Lithography, Semiconducting wafers, Silicon, Reactive ion etching, Polymers, Lithographic illumination, Photoresist processing, Chemistry, Photoresist developing

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Proceedings Article | 19 January 2011 Paper

InP on SOI devices for optical communication and optical network on chip

J.-M. Fedeli, B. Ben Bakir, N. Olivier, Ph. Grosse, L. Grenouillet, E. Augendre, P. Phillippe, K. Gilbert, D. Bordel, J. Harduin

Proceedings Volume 7942, 79420O (2011) https://doi.org/10.1117/12.878607

KEYWORDS: Silicon, Waveguides, Semiconducting wafers, Semiconductor lasers, Hybrid silicon lasers, Optical networks, Optical communications, Photodetectors, Laser development, Wafer bonding

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Proceedings Article | 19 May 2008 Paper

Microstructured photonic crystal for single-mode long wavelength VCSELs

Renaud Stevens, Philippe Gilet, Alexandre Larrue, Laurent Grenouillet, Nicolas Olivier, Philippe Grosse, Karen Gilbert, Bertrand Hladys, Badhise Ben Bakir, Jesper Berggren, Mattias Hammar, Alexei Chelnokov

Proceedings Volume 6997, 69970X (2008) https://doi.org/10.1117/12.783317

KEYWORDS: Vertical cavity surface emitting lasers, Photonic crystals, Near field optics, Mirrors, Quantum wells, Near field, Wafer-level optics, Indium gallium arsenide, Semiconducting wafers, Oxidation

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Proceedings Article | 1 February 2008 Paper

Singlemode 1.1 µm InGaAs quantum well microstructured photonic crystal VCSEL

Renaud Stevens, Philippe Gilet, Alexandre Larrue, Laurent Grenouillet, Nicolas Olivier, Philippe Grosse, Karen Gilbert, Raphael Teysseyre, Alexei Chelnokov

Proceedings Volume 6908, 69080D (2008) https://doi.org/10.1117/12.760052

KEYWORDS: Vertical cavity surface emitting lasers, Photonic crystals, Quantum wells, Indium gallium arsenide, Wafer-level optics, Semiconducting wafers, Mirrors, Continuous wave operation, Waveguides, Oxidation

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Proceedings Article | 23 February 2007 Paper

1.3 µm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots — three candidates as active material

Ph. Gilet, E. Pougeoise, L. Grenouillet, Ph. Grosse, N. Olivier, S. Poncet, A. Chelnokov, J. M. Gérard, R. Stevens, R. Hamelin, M. Hammar, J. Berggren, P. Sundgren

Proceedings Volume 6484, 64840F (2007) https://doi.org/10.1117/12.700403

KEYWORDS: Vertical cavity surface emitting lasers, Oxides, Indium gallium arsenide, Quantum wells, Gallium arsenide, Aluminum, Quantum dots, Gallium, Continuous wave operation, Oxidation

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Proceedings Article | 7 July 2006 Paper

GaIn(N)As/GaAs VCSELs emitting in the 1.1-1.3 μm range

L. Grenouillet, P. Duvaut, N. Olivier, P. Gilet, P. Grosse, S. Poncet, P. Philippe, E. Pougeoise, L. Fulbert, A. Chelnokov

Proceedings Volume 6350, 63500G (2006) https://doi.org/10.1117/12.692829

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Doping, Oxides, Nitrogen, Continuous wave operation, Mirrors, Gallium arsenide, Molecular beam epitaxy, Photonics

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Showing 5 of 6 publications

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